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VISHAY
BYV26
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
Features
* * * * * Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage
Applications
Switched mode power supplies High-frequency inverter circuits
949539
Mechanical Data
Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg
Parts Table
Part BYV26A BYV26B BYV26C BYV26D BYV26E Type differentiation VR = 200 V; IFAV = 1 A VR = 400 V; IFAV = 1 A VR = 600 V; IFAV = 1 A VR = 800 V; IFAV = 1 A VR = 1000 V; IFAV = 1 A SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Package
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYV26A BYV26B BYV26C BYV26D BYV26E Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A, inductive load tp = 10 ms, half sinewave Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg Value 200 400 600 800 1000 30 1 10 - 55 to + 175 Unit V V V V V A A mJ C
Document Number 86040 Rev. 1.6, 13-Aug-04
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BYV26
Vishay Semiconductors Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant Symbol RthJA Value 45
VISHAY
Unit K/W
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse breakdown voltage IF = 1 A IF = 1 A, Tj = 175 C VR = VRRM VR = VRRM, Tj = 150 C IR = 100 A BYV26A BYV26B BYV26C BYV26D BYV26E Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26ABYV26C BYV26DBYV26E Test condition Part Symbol VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr 300 500 700 900 1100 30 75 Min Typ. Max 2.5 1.3 5 100 Unit V V A A V V V V V ns ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
P - Maximum Reverse Power Dissipation (mW R
600 500 400 300 200 100 0 1000V 0 40 80 120 160 200 Tj - Junction Temperature ( C ) R thJA = 100 K/W V R = VRRM 200V 400V 600V 800V
I R - Reverse Current ( A )
1000
V R = VRRM
R thJA = 45 K/W
100
10
1
95 9729
0
40
80
120
160
200
95 9728
Tj - Junction Temperature ( C )
Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature
Figure 2. Max. Reverse Current vs. Junction Temperature
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Document Number 86040 Rev. 1.6, 13-Aug-04
VISHAY
BYV26
Vishay Semiconductors
1.2
I FAV - Average Forward Current ( A )
40
CD - Diode Capacitance ( pF )
1.0 0.8 0.6 0.4 R thJA = 100 K/W 0.2 0 0 40 80 120 160 Tamb - Ambient Temperature ( C ) 200 R thJA = 45 K/W
35 30 25 20 15 10 5 0 0.1 1 10
f = 1 MHz
BYV26C
100
95 9730
16380
VR - Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
10
I F - Forward Current ( A )
Tj =175C
CD - Diode Capacitance ( pF )
40 35 30 25 20 15 10 5 0 0.1
16381
f = 1 MHz
1 Tj = 25C
BYV26E
0.1
0.01
0.001 0
95 9731
1
2
3
5
6
6
7
1
10
100
V F - Forward Voltage ( V )
VR - Reverse Voltage ( V )
Figure 4. Max. Forward Current vs. Forward Voltage
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case SOD-57 Cathode Identification 3.6 (0.140)max.
ISO Method E 94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
Document Number 86040 Rev. 1.6, 13-Aug-04
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BYV26
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 86040 Rev. 1.6, 13-Aug-04

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