 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CGY 93P GaAs MMIC Preliminary Data l l l Power amplifier for GSM application 2 stage amplifier Overall power added efficiency 55% ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 93P CGY 93P Q62702G72 MW 16 Maximum ratings Characteristics Positive supply voltage Negative supply voltage Supply current stage 1 Supply current stage 2 Channel temperature Storage temperature RF input power Total power dissipation (CW, Ts 81C) Ts: Temperature at soldering point Symbol VD VG max. Value 7.0 -5.0 0.6 3.5 150 -55....+150 20 t.b.d. (better 6 W) Unit V V A A C C dBm W ID1 ID2 TCh Tstg Pin Ptot Thermal Resistance Characteristics Channel-soldering point Symbol max. Value t.b.d. Unit K/W RthChS Siemens Aktiengesellschaft Semiconductor Group 1 1 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P Functional block diagramm: VG1 (8) VG2 (2) RFin (7) RFout / VD2 12,13,14,15 CGY93P VD1 (4) GND (17) Backside Pin Out: Pin # 1 2 3 4 5 6 7 8 9 10 11 12,13,14, 15 16 (17) Name NC VG2 NC VD1 NC NC RFin VG1 NC NC NC VD2 / RFout NC GND Configuration Gate voltage strage 2 Drain Voltage stage 1 RF input Gate Voltage stage 1 Drain voltage stage 2 / RF output Ground (backside of MW16 housing) Siemens Aktiengesellschaft Semiconductor Group 2 2 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P Electrical characteristics (TA=25C, pulsed with a duty cycle of 12.5%, ton=577sec) Characteristics Frequency range Supply current with RF Pin=12dBm,VD=3.5V Small signal gain VD=3.5V, Pin=-10dBm Power gain VD=3.5V; Pin=12dBm Output Power VD=2.8V; Pin=12dBm Output Power VD=3.5V; Pin=12dBm Overall Power added Efficiency VD=2.8V; Pin=12dBm Overall Power added Efficiency VD=3.5V; Pin=12dBm Noise Power in RX (935-960MHz) Pin=12dBm, Pout=33.3dBm, 100kHz RBW Harmonics VD=2.8V; (Pin=12dBm, Pout=33.3dBm) Stability all spurious outputs < -60dBc, VSWR load, all phase angles Input VSWR (with external match) Symbol f min 880 29 23 33.0 35.0 47 50 typ 1.8 30.0 23.3 33.3 35.3 53 55 -82 max 915 Unit MHz A dB dB dBm dBm % % dBm IDRF G GP Pout Pout NRX H(2f0) H(3f0)) 40 40 - 43 43 10 : 1 2:1 2.2 : 1 dBc dBc - Siemens Aktiengesellschaft Semiconductor Group 3 3 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P CGY 93P, @3.5V, f=900MHz (VG=-2.0V, pulsed with a duty cycle of 12,5%, ton=0.577ms) 36 35 34 33 32 31 80 75 70 65 60 55 45 40 35 30 25 20 Pout [dBm] PAE [%] 15 10 5 0 14 15 50 Pout [dBm] 29 28 27 26 25 24 23 22 21 20 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Pin [dBm] CGY 93P, @2.8V, f=900MHz (VG=-2.0V, pulsed with a duty cycle of 12,5%, ton=0.577ms) 36 35 34 33 32 31 80 75 70 65 60 55 45 40 35 30 25 20 Pout [dBm] PAE [%] 15 10 5 0 14 15 50 Pout [dBm] 29 28 27 26 25 24 23 22 21 20 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Pin [dBm] Siemens Aktiengesellschaft Semiconductor Group 4 4 PAE [%] 30 PAE [%] 30 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P CGY93P - Pout and PAE vs. VD output matching optimized for VD=3.5V (f=900MHz, duty cycle12,5%, ton=577 sec, Pin=12dBm) 64 60 56 52 PAE [%] 48 44 40 36 Pout [dBm] PAE [%] 42 41 40 39 Pout [dBm] 38 37 36 35 34 33 32 31 30 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 VD [V] 32 28 24 20 16 GSM Application Board CGY93P: VG1 Test Board CGY93P VG2 VD2 47nF VG1 VG2 10nH RFout VD2 RFin RF out 2,7pf 5,6pF 10pF CGY93P VD1 1nF GND VD1 50 Ohm Transmission Line Siemens Aktiengesellschaft Semiconductor Group 5 5 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P CGY93P 47n 33nH 1n CGY 93P 1n 10p 2.7p 5.6p 1n Siemens Aktiengesellschaft Semiconductor Group 6 6 23.07.98 1998-11-01 HL HF PE GaAs CGY 93P Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstrae 73, D-81541 Munchen copyright Siemens AG 1998. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 7 7 23.07.98 1998-11-01 HL HF PE GaAs |
Price & Availability of CGY93P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |