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| SSM3J09FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J09FU Power Management Switch High Speed Switching Applications * * Small package Low on resistance : Ron = 2.7 (max) (@VGS = -10 V) : Ron = 4.2 (max) (@VGS = -4 V) Maximum Ratings (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation (Ta = 25C) Channel temperature Storage temperature Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -30 20 -200 -400 150 150 -55~150 Unit V V mA mW C C Note1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm x 3) Figure 1. Marking Equivalent Circuit (top view) 3 3 Figure 1: 25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.6 mm2 x 3 0.6 mm 1.0 mm DK 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-04-14 1/4 SSM3J09FU Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 16 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID = -100 mA ID = -100 mA, VGS = -10 V Drain-Source ON resistance RDS (ON) ID = -100 mA, VGS = -4 V ID = -100 mA, VGS = -3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min -30 -1.1 115 Typ. 2.1 3.3 4.0 22 5 14 85 85 Max 1 -1 -1.8 2.7 4.2 6.0 pF pF pF ns ns Unit A V A V mS VDS = -5 V, VGS = 0, f = 1 MHz VDS = -5 V, VGS = 0, f = 1 MHz VDS = -5 V, VGS = 0, f = 1 MHz VDD = -5 V, ID = -100 mA, VGS = 0~-4 V Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) VIN 0V 0 -4 V 10 s VDD = -5 V D.U. < 1% = Input: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C Output Input 50 RL -4 V 90% 10% VDD (c) VOUT VDS (ON) 90% VDD 10% tr ton toff tf Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of -4.0 V or higher to turn on this product. 2000-04-14 2/4 SSM3J09FU ID - VDS -500 Common Source Ta = 25C -400 -10 -4 7 8 RDS (ON) - ID Common Source Ta = 25C Drain-Source on resistance RDS (ON) () (mA) 6 5 4 -4 V 3 2 1 0 0 -10 V VGS = -3.3 V -3.3 -300 -3.0 -200 -2.8 -2.6 -100 VGS = -2.4 V 0 0 -0.5 -1 -1.5 -2 Drain current ID -100 -200 -300 -400 -500 Drain-Source voltage VDS (V) Drain current ID (mA) ID - VGS -1000 Common Source VDS = -5 V 7 -100 8 RDS (ON) - VGS Common Source ID = -100 mA Drain-Source on resistance RDS (ON) () (mA) 6 5 Ta = 100C 4 3 2 1 25C 25C -10 Ta = 100C -1 -25C Drain current ID -0.1 -25C -0.01 0 -1 -2 -3 -4 0 0 -2 -4 -6 -8 -10 Gate-Source voltage VGS (V) Gate-Source voltage VGS (V) Yfs - ID RDS (ON) - Ta 8 Common Source 500 7 ID = -100 mA 1000 Common Source VDS = -5 V Ta = 25C Forward transfer admittance Yfs (mS) 300 Drain-Source on resistance RDS (ON) () 6 5 4 3 2 1 0 -25 VGS = -3.3 V -4 V -10 V 100 50 30 0 25 50 75 100 125 150 10 -10 -30 -50 -100 -300 -500 -1000 Ambient temperature Ta (C) Drain current ID (mA) 2000-04-14 3/4 SSM3J09FU Vth - Ta -2 -500 Common Source -1.8 IDR - VDS Common Source VGS = 0 Ta = 25C D -300 G S -200 IDR Gate threshold voltage Vth (V) (mA) Drain Reveres current IDR ID = -0.1 mA -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 -25 0 25 50 75 100 125 150 -400 -100 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Ambient temperature Ta (C) Drain-Source voltage VDS (V) C - VDS 100 Common Source VGS = 0 V f = 1 MHz Ta = 25C Ciss 10 Coss 1000 t - ID Common Source VDD = -5 V VGS = 0~-4 V Ta = 25C Switching time t (ns) (pF) toff tf 100 ton tr Capacitance C Crss 1 -0.1 -1 -10 -100 10 -1 -10 -100 -1000 Drain-Source voltage VDS (V) Drain current ID (mA) PD - Ta 200 Mounted on FR4 board (25.4 mm x 25.4 mm x1.6 t 2 Cu pad: 0.6 mm x 3) Figure 1 150 Power dissipation PD (mW) 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2000-04-14 4/4 |
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