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| MT4S32U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S32U VHF~UHF Band Low Noise Amplifier Applications * * Low Noise Figure: NF = 1.4 dB (f = 2 GHz) High Gain: |S21e|2 = 13.5 dB (f = 2 GHz) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 8 4.5 1.5 15 7.5 67.5 125 -55~125 Unit V V V mA mA mW C C Marking 2 1 Type name U4 3 4 Microwave Characteristics (Ta = 25C) Characteristics Transition frequency Insertion gain Symbol fT |S21e| (1) |S21e| (2) Noise figure NF(1) NF(2) 2 2 Test Condition VCE = 3 V, IC = 10 mA VCE = 3 V, IC = 10 mA, f = 1 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 1 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz Min 13 16.5 11.5 Typ. 16 19 13.5 1.0 1.4 Max 21.5 16.5 1.4 1.8 Unit GHz dB dB dB dB 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-05-17 1/8 MT4S32U Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA VCB = 3 V, IE = 0, f = 1 MHz (Note) Min 50 Typ. 0.4 0.2 Max 1 1 150 0.65 0.45 Unit A A pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. CAUTION: This device electrostatic sensitivity. Please handle with caution. 2000-05-17 2/8 MT4S32U Cob, Cre - VCB 1 Collector output capacitance Cob (pF) Reverse transfer capacitance Cre (pF) f = 1 MHz Ta = 25C Cob 0.5 0.3 Cre 0.1 0.1 0.3 0.5 1 3 5 10 Collector-base voltage VCB (V) |S21e| - IC 25 f = 1 GHz Ta = 25C 25 f = 2 GHz Ta = 25C 2 |S21e| - IC 2 (dB) 20 (dB) Insertion gain |S21e| 2 VCE = 3 V 20 Insertion gain |S21e| 2 15 VCE = 1 V 15 VCE = 3 V 10 10 VCE = 1 V 5 5 0 1 3 10 30 100 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) fT - IC 25 3 Ta = 25C VCE = 1 V f = 1 GHz VCE = 3 V 15 VCE = 1 V 10 Ta = 25C 2 NF - IC (GHz) Transition frequency fT Noise figure NF (dB) 20 1 5 0 1 3 10 30 100 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) 2000-05-17 3/8 MT4S32U NF - IC 3 VCE = 3 V f = 1 GHz 3 VCE = 1 V f = 2 GHz NF - IC Noise figure NF (dB) 2 Noise figure NF (dB) Ta = 25C Ta = 25C 2 1 1 0 1 3 10 30 100 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) NF - IC 3 VCE = 3 V 30 |S21e| - f VCE = 1 V Ta = 25C 2 Noise figure NF (dB) Ta = 25C 2 2 (dB) Insertion gain |S21e| 20 IC = 10 mA 10 f = 2 GHz 1 IC = 3 mA 0 1 3 10 30 100 0 100 300 1000 300 10000 Collector current IC (mA) Frequency f (MHz) |S21e| - f 30 VCE = 3 V Ta = 25C 2 2 (dB) Insertion gain |S21e| 20 IC = 10 mA IC = 3 mA 10 0 100 300 1000 300 10000 Frequency f (MHz) 2000-05-17 4/8 MT4S32U S parameter VCE = 1 V Frequency f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 Mag. 0.870 0.850 0.822 0.793 0.759 0.731 0.700 0.675 0.653 0.635 0.617 0.607 0.595 0.588 0.580 0.577 0.572 0.569 0.566 0.563 0.561 0.560 0.556 0.558 0.554 0.556 Zo = 50 , Ta = 25C IC = 3 mA S11 Ang. -13.0 -27.0 -39.8 -51.7 -63.1 -73.5 -83.8 -92.5 -101.1 -108.5 -115.9 -122.3 -128.6 -134.1 -139.6 -144.3 -148.8 -153.2 -157.5 -161.2 -164.6 -168.0 -171.3 -174.2 -177.4 179.9 Mag. 8.870 8.591 8.222 7.782 7.365 6.888 6.465 6.024 5.659 5.307 4.986 4.695 4.420 4.206 3.988 3.814 3.600 3.429 3.277 3.164 3.048 2.902 2.790 2.697 2.637 2.533 S21 Ang. 169.4 160.0 151.0 143.0 135.5 128.5 122.3 116.6 111.3 106.8 102.2 98.2 94.0 90.4 86.9 83.9 80.6 77.6 74.5 71.8 69.5 67.1 64.2 61.5 59.3 57.5 Mag. 0.025 0.044 0.062 0.080 0.093 0.106 0.115 0.123 0.130 0.135 0.139 0.143 0.146 0.148 0.149 0.152 0.154 0.156 0.157 0.156 0.159 0.160 0.159 0.162 0.162 0.162 S12 Ang. 87.6 73.4 65.9 60.2 55.3 50.2 44.7 40.8 37.6 34.8 32.1 29.4 27.3 25.5 23.6 22.6 20.7 20.2 18.4 17.9 17.0 15.9 15.6 14.8 13.9 13.7 Mag. 0.980 0.957 0.916 0.866 0.814 0.761 0.710 0.661 0.619 0.576 0.541 0.508 0.477 0.450 0.422 0.402 0.382 0.364 0.346 0.329 0.316 0.302 0.288 0.278 0.264 0.256 S22 Ang. -9.9 -19.1 -28.1 -36.4 -43.7 -50.5 -56.9 -62.6 -67.7 -72.8 -77.2 -81.4 -85.3 -89.2 -92.8 -96.2 -99.7 -102.5 -105.9 -108.2 -111.6 -114.0 -117.1 -119.5 -122.8 -124.7 2000-05-17 5/8 MT4S32U VCE = 1 V Frequency f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 Mag. 0.647 0.621 0.590 0.564 0.544 0.532 0.526 0.519 0.517 0.517 0.516 0.518 0.520 0.522 0.525 0.529 0.531 0.534 0.539 0.540 0.544 0.547 0.547 0.551 0.555 0.557 IC = 10 mA S11 Ang. -27.1 -53.7 -75.5 -92.8 -107.3 -118.8 -128.8 -136.7 -143.8 -149.7 -155.1 -159.8 -164.2 -167.9 -171.4 -174.6 -177.7 179.6 176.7 174.2 171.8 169.6 167.3 165.2 162.7 160.8 Mag. 20.049 18.111 15.953 13.932 12.227 10.749 9.574 8.592 7.816 7.135 6.564 6.079 5.642 5.294 4.979 4.702 4.430 4.176 3.975 3.817 3.662 3.468 3.331 3.202 3.130 3.005 S21 Ang. 162.6 147.0 134.4 124.7 116.7 110.3 104.7 100.0 95.8 92.2 88.7 85.7 82.3 79.6 76.9 74.5 71.9 69.5 67.0 64.9 62.9 61.1 58.5 56.2 54.4 53.1 Mag. 0.024 0.034 0.050 0.057 0.065 0.070 0.073 0.077 0.082 0.085 0.088 0.092 0.096 0.100 0.103 0.107 0.110 0.114 0.118 0.121 0.124 0.129 0.131 0.137 0.139 0.142 S12 Ang. 67.2 69.1 57.5 52.4 48.7 44.8 43.1 42.3 41.7 40.6 40.4 39.5 39.3 38.7 38.3 38.1 37.4 37.3 36.8 36.6 35.8 35.0 35.1 34.5 33.6 33.9 Mag. 0.934 0.843 0.742 0.649 0.574 0.508 0.458 0.415 0.382 0.354 0.331 0.312 0.296 0.283 0.269 0.261 0.252 0.245 0.238 0.230 0.226 0.222 0.216 0.213 0.209 0.206 S22 Ang. -18.9 -35.6 -49.8 -61.0 -70.2 -78.2 -85.3 -91.5 -97.2 -102.9 -107.8 -112.8 -117.0 -121.8 -126.3 -130.4 -134.9 -138.4 -142.8 -146.5 -150.7 -154.0 -158.3 -161.5 -165.8 -169.1 2000-05-17 6/8 MT4S32U VCE = 3 V Frequency f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 Mag. 0.883 0.872 0.844 0.819 0.790 0.760 0730 0.703 0.676 0.653 0.627 0.611 0.595 0.582 0.567 0.559 0.549 0.541 0.533 0.526 0.523 0.517 0.510 0.508 0.503 0.502 IC = 3 mA S11 Ang. -10.0 -21.0 -31.1 -40.7 -50.2 -59.3 -68.0 -75.9 -83.7 -90.5 -97.6 -103.9 -110.3 -115.8 -121.6 -126.4 -131.2 -136.0 -140.6 -144.7 -148.5 -152.1 -155.7 -159.0 -162.4 -165.5 Mag. 8.913 8.700 8.464 8.128 7.819 7.442 7.109 6.719 6.400 6.065 5.759 5.462 5.197 4.972 4.749 4.564 4.325 4.136 3.964 3.837 3.714 3.531 3.396 3.292 3.225 3.099 S21 Ang. 171.0 163.6 155.8 148.9 142.2 136.0 130.1 124.8 119.7 115.3 110.6 106.7 102.5 98.9 95.5 92.4 89.1 86.1 82.9 80.3 77.8 75.6 72.7 69.9 67.7 66.1 Mag. 0.015 0.030 0.041 0.056 0.066 0.077 0.084 0.090 0.097 0.101 0.106 0.110 0.114 0.116 0.117 0.120 0.122 0.124 0.125 0.124 0.126 0.128 0.127 0.129 0.130 0.130 S12 Ang. 82.0 76.5 72.1 67.5 62.0 57.1 52.6 48.9 45.3 42.4 39.9 37.8 35.3 33.2 31.1 30.1 28.6 27.6 25.8 24.8 24.1 23.2 22.9 22.4 21.3 21.3 Mag. 0.989 0.975 0.946 0.912 0.877 0.834 0.795 0.753 0.714 0.675 0.643 0.609 0.579 0.551 0.522 0.501 0.479 0.460 0.438 0.420 0.404 0.391 0.374 0.364 0.347 0.338 S22 Ang. -6.8 -13.4 -20.0 -25.9 -31.3 -36.5 -41.3 -45.6 -49.6 -53.3 -56.6 -59.8 -62.6 -65.2 -67.7 -69.9 -72.2 -74.1 -76.2 -77.5 -79.4 -80.8 -82.0 -83.3 -85.1 -85.8 2000-05-17 7/8 MT4S32U VCE = 3 V Frequency f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 Mag. 0.685 0.663 0.620 0.580 0.543 0.515 0.493 0.475 0.462 0.452 0.446 0.441 0.437 0.436 0.434 0.437 0.436 0.437 0.439 0.440 0.442 0.442 0.442 0.443 0.445 0.449 IC = 10 mA S11 Ang. -19.0 -38.5 -55.5 -70.4 -83.6 -94.7 -105.3 -113.8 -121.8 -128.7 -135.2 -140.6 -146.0 -150.5 -154.9 -158.5 -162.2 -165.6 -169.3 -172.2 -175.0 -177.4 180.0 177.5 174.6 172.5 Mag. 20.505 19.144 17.511 15.811 14.223 12.816 11.610 10.533 9.671 8.892 8.223 7.653 7.150 6.720 6.339 6.011 5.667 5.361 5.099 4.911 4.717 4.463 4.277 4.136 4.034 3.867 S21 Ang. 165.8 153.1 141.9 132.6 124.8 118.2 112.4 107.4 103.1 99.3 95.6 92.5 89.1 86.4 83.6 81.3 78.6 76.2 73.6 71.6 69.6 67.9 65.4 63.0 61.3 59.9 Mag. 0.011 0.025 0.035 0.044 0.049 0.054 0.057 0.061 0.065 0.068 0.071 0.075 0.078 0.081 0.084 0.087 0.090 0.094 0.096 0.099 0.102 0.105 0.107 0.112 0.115 0.117 S12 Ang. 80.4 66.7 64.1 58.3 56.2 52.2 50.3 49.5 47.5 46.9 46.6 45.6 45.0 44.6 44.0 44.6 43.1 43.3 41.7 41.8 41.8 41.2 41.2 40.8 39.6 39.6 Mag. 0.959 0.904 0.819 0.744 0.675 0.608 0.555 0.506 0.467 0.432 0.403 0.379 0.356 0.335 0.315 0.301 0.286 0.274 0.260 0.248 0.238 0.229 0.216 0.208 0.197 0.189 S22 Ang. -12.7 -23.7 -33.6 -41.6 -47.9 -53.5 -58.0 -62.0 -65.4 -68.4 -71.1 -73.8 -76.1 -78.3 -80.6 -82.4 -84.9 -86.5 -89.1 -90.1 -92.3 -93.4 -95.6 -96.6 -98.7 -99.6 2000-05-17 8/8 |
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