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| 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2 2SK3387 High Speed Switching Applications Switching Regulator, DC-DC Converter and Motor Drive Applications * * * * * 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 (typ.) High forward transfer admittance: Yfs = 17 S (typ.) Low leakage current: IDSS = 100 A (VDS = 150 V) Enhancement-mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit in mm Maximum Ratings (Tc = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse Drain power dissipation (Tc = 25C) Single pulse avalanche energy** Repetitive avalanche energy* Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS EAR Tch Tstg Rating 150 150 20 18 54 100 176 10 150 -55~150 W mJ mJ C C Unit V V V A Notice: S1: Input signal pin S2: Source current 4 Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.25 Unit C/W 1 Note1: * Repetitive rating; pulse width limited by max junction temperature. ** VDD = 50 V, Tch = 25C (initial), L = 800 H, RG = 25 , IAR = 18 A This transistor is an electrostatic sensitive device. Please handle with caution. 2 3 000707EAA1 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-07-07 1/5 2SK3387 Electrical Characteristics (Note2) (Tc = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd VDD 120 V, VGS = 10 V, ID = 18 A - S1 Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS1 0V 4.7 G ID = 9 A VOUT D RL = 11 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 150 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 9 A VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min 150 0.8 10 Typ. 0.09 0.08 17 1380 200 610 12 20 12 68 57 43 14 Max 10 100 2.0 0.18 0.12 Unit A A V V S pF pF pF VDD 100 V - ns S2 VIN: tr, tf < 5 ns Duty < 1%, tw = 10 s = nC nC nC Note2: Please connect the S1 pin and S2 pin, and then ground the connected pin. (However, while switching times are measured, please don't connect and ground it.) Source-Drain Diode Ratings and Characteristics (Note3) (Tc = 25C) Characteristics Continuous drain reverse current *** Pulse drain reverse current *** Continuous drain reverse current *** Pulse drain reverse current *** Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR1 IDRP1 IDR2 IDRP2 VDS2F trr Qrr Test Condition IDR1 = 18 A, VGS = 0 V IDR = 18 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 185 1.3 Max 18 54 1 4 -1.7 Unit A A A A V ns C Note 3: *** drain, flowing current value between the S2 pin, open the S1 pin drain, flowing current value between the S1 pin, open the S2 pin Unless otherwise specified, please connect the S1 and S2 pins, and then ground the connected pin. Marking Lot Number K3387 Type Month (starting from alphabet A) Year (last number of the christian era) 2000-07-07 2/5 2SK3387 ID - VDS 20 4 8 6 16 10 3.5 12 3.2 8 VGS = 3 V 4 3.8 Common source Tc = 25C 40 50 Common source Tc = 25C 8 ID - VDS 10 6 5 4.5 (A) Drain current ID Drain current ID (A) 30 4 20 3.5 10 3 VGS = 2.5 V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 30 Common source VDS = 10 V 4 VDS - VGS Common source Drain-source voltage VDS (V) Tc = 25C 3 (A) Drain current ID 20 2 ID = 18 A Tc = -55C 10 25 100 1 9 3 0 0 1 2 3 4 5 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID Forward transfer admittance Yfs (S) 50 Common source 30 VDS = 10 V Tc = -55C 1000 RDS (ON) - ID Drain-source on resistance RDS (ON) (m) 25 Common source 500 Tc = 25C 300 100 10 4 100 50 30 VGS = 10 V 5 3 1 1 3 5 10 30 50 100 10 0.1 0.3 0.5 1 3 5 10 30 50 Drain current ID (A) Drain current ID (A) 2000-07-07 3/5 2SK3387 RDS (ON) - Tc 200 Common source 100 Common source 160 ID = 18 A 9 120 4.5 Tc = 25C IDR - VDS Drain-source on resistance RDS (ON) (m) (A) Drain reverse current IDR 50 30 10 10 5 3 3 5 1 VGS = 0, -1 V 80 40 VGS = 10 V 0 -80 -40 0 40 80 120 160 1 0 -0.4 -0.8 -1.2 -1.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 4 Common source VDS = 10 V ID = 1 mA 3 Vth - Tc Ciss (pF) 1000 500 300 Coss 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 0.3 0.5 1 3 5 10 30 50 100 Crss Gate threshold voltage Vth (V) Capacitance C 2 1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 150 160 Dynamic input/output characteristics 40 Common source ID = 18 A Tc = 25C 120 30 (W) Drain-source voltage VDS (V) Drain power dissipation PD 100 VDS 80 30 VDD = 120 V 10 20 50 60 40 VGS 0 0 40 80 120 160 0 0 0 20 40 60 Case temperature Tc (C) Total gate charge Qg (nC) 2000-07-07 Gate-source voltage VGS (V) 4/5 2SK3387 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 Single pulse t T Duty = t/T Rth (ch-c) = 1.25C/W 1 10 Pulse width tw (S) Safe operating area 100 ID max (pulsed) * 50 200 EAS - Tch (mJ) Avalanche energy EAS 100 s * 30 ID max (continuous) * 1 ms * 160 (A) 120 10 5 3 DC operation Tc = 25C Drain current ID 80 40 1 0.5 0.3 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 VDSS max 100 300 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit Wave form 1 B VDSS 2 Peak IAR = 18 A, RG = 25 AS = L I B - VDD 2 VDD = 50 V, L = 0.8 mH VDSS 2000-07-07 5/5 |
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