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| HN1K05FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications * * * High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package. Maximum Ratings (Ta = 25C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55 to 150 Unit V V mA mW C C Note: TOTAL rating 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-06-16 1/4 HN1K05FU Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristic Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance 1 Drain-Source ON resistance 2 Drain-Source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) 1 RDS (ON) 2 RDS (ON) 3 Ciss Crss Coss ton Switching time toff Test Condition VGS = 10 V, VDS = 0 V ID = 100 A, VGS = 0 V VDS = 20 V, VGS = 0 V VDS = 1.5 V, ID = 0.1 mA VDS = 1.5 V, ID = 10 mA ID = 1 mA, VGS = 1.2 V ID = 10 mA, VGS = 1.5 V ID = 10 mA, VGS = 2.5 V VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDS = 1.5 V, VGS = 0 V, f = 1 MHz VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V VDD = 1.5 V, ID = 10 mA, VGS = 0 to 1.5 V Min 20 0.5 35 Typ. 70 15 10 7 12 3.4 12 0.35 0.2 Max 1 1 1 50 40 28 s Unit A V A V mS pF pF pF Equivalent Circuit (top view) 6 5 4 Marking 6 5 4 Q1 Q2 KK 1 (Q1, Q2 common) 2 3 1 2 3 Switching Time Test Circuit (a) Test circuit ID 1.5 V 0 10 s VIN IN 50 RL OUT VDD = 1.5 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C (b) VIN VGS 1.5 V 90% 0 VDD 10% 10% 90% tr ton toff tf (c) VOUT VDS VDS (ON) VDD 2000-06-16 2/4 HN1K05FU (Q1, Q2 common) ID - VDS 100 2.0 V 1.8 V Common source 80 100 Common source Ta = 25C 2.5 V ID - VDS (low voltage region) 2.0 V 1.8 V (mA) (mA) 80 1.6 V 2.2 V 60 1.6 V ID 60 Drain current Drain current ID 40 1.4 V 1.4 V 40 1.2 V 20 VGS = 1 V 1.2 V 20 VGS = 1 V 0 0 4 8 12 16 20 0 0 0.4 0.8 1.2 1.6 2.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 100 Common source VDS = 1.5 V 10 Ta = 100C -25C 100 Common source Ta = 25C RDS (ON) - ID Drain-source on resistance RDS (ON) () (mA) 1.2 V 1.5 V 10 ID 25C 1 Drain current VGS = 2.5 V 0.1 0.01 0 0.5 1 1.5 2 2.5 1 0.1 1 10 100 Gate-source voltage VGS (V) Drain current ID (mA) RDS (ON) - Ta 50 Common source 40 1000 Yfs - ID Common source VDS = 1.5 V Ta = 25C Forward transfer admittance Yfs (mS) Drain-source on resistance RDS (ON) () 100 30 20 VGS = 1.5 V, ID = 10 mA VGS = 1.2 V, ID = 1 mA 10 10 VGS = 2.5 V, ID = 10 mA 0 -50 0 50 100 150 1 1 10 100 1000 Ambient temperature Ta (C) Drain current ID (mA) 2000-06-16 3/4 HN1K05FU (Q1, Q2 common) C - VDS 100 Common source VGS = 0 10000 t - ID Common source VDD = 1.5 V (pF) (ns) f = 1 MHz Ta = 25C VGS = 0 to 1.5 V Ta = 25C 1000 toff C 10 Ciss Switching time Capacitance t ton 100 tr tf Coss Crss 0 0.1 1 10 100 10 0.1 1 10 100 Drain-source voltage VDS (V) Drain current ID (mA) PD* - Ta 300 Drain power dissipation PD* (mW) 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) *: TOTAL rating 2000-06-16 4/4 |
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