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HGT1S14N37G3VLS, HGTP14N37G3VL
TM
Data Sheet
July 2000
File Number
4857
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit. Formerly Developmental Type TA49169.
Features
* Logic Level Gate Drive * Internal Voltage Clamp * ESD Gate Protection * TJ = 175oC * Internal Series and Shunt Gate Resistors * Low Conduction Loss * Ignition Energy Capable
Packaging
JEDEC TO-263AB BRAND
Ordering Information
PART NUMBER HGT1S14N37G3VLS HGTP14N37G3VL PACKAGE TO-263AB TO-220AB 14N37GVL 14N37GVL
G E
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A
Symbol
COLLECTOR
JEDEC TO-220AB
E R1 GATE R2 C G
EMITTER
COLLECTOR (FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright (c) Intersil Corporation 2000
HGT1S14N37G3VLS, HGTP14N37G3VL
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGT1S14N37G3VLS, HGTP14N37G3VL Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCER Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVECS Collector Current Continuous at VGE = 5V, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 5V, TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . IC110 Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Inductive Switching Current at L = 3mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS at L = 3mH, TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . ISCIS Collector to Emitter Avalanche Energy at L = 3 mH, TC = 25oC . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ Electrostatic Voltage HBM at 250pF, 1500 All Pin Configurations. . . . . . . . . . . . . . . . . .ESD Electrostatic Voltage MM at 200pF, 0 All Pin Configurations. . . . . . . . . . . . . . . . . . . . . .ESD Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 380 24 25 18 10 15 11.5 340 136 0.91 -55 to 175 -55 to 175 5 2 300 260 UNITS V V A A V A A mJ W W/oC oC oC kV kV
oC oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. May be exceeded if IGEM is limited to 10mA.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCER VGEP QG(ON) BVCE(CL) BVECS ICES TEST CONDITIONS IC = 10mA, RG = 1k, VGE = 0V, TJ = -55oC to 175oC (Figure 16) IC = 6.5A, VCE = 12V IC = 6.5A, VCE = 12V, VGE = 5V (Figure 16) IC = 15A, RG = 1k IC = 10mA VCE = 300V, VGE = 0V (Figure 13) VCE = 250V, VGE = 0V (Figure 13) TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = -55oC TJ = 25oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = 175oC MIN 320 320 24 1.3 10 VGE = 10V 310 TYP 350 2.76 27 350 28 1.3 1.25 1.45 1.5 1.6 1.7 1.8 70 18 500 MAX 380 380 40 250 10 75 10 50 1.45 1.6 1.75 1.9 2 2.3 2.2 150 26 1000 UNITS V V nC V V A A A A mA mA V V V V V V V k A
Collector to Emitter Breakdown Voltage Gate to Emitter Plateau Voltage Gate Charge Collector to Emitter Clamp Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Emitter to Collector Leakage Current Collector to Emitter On-State Voltage
IECS
VEC = -24V, VGE = 0V (Figure 13) IC = 6A, VGE = 4.0V (Figures 3 through 9) IC = 10A, VGE = 4.5V (Figures 3 through 9) IC = 14A, VGE = 5V (Figures 3 through 9)
VCE(ON)
Gate to Emitter Threshold Voltage Gate Series Resistance Gate to Emitter Resistance Gate to Emitter Leakage Current
VGE(TH) R1 R2 IGES
IC = 1mA, VCE = VGE (Figure 12)
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HGT1S14N37G3VLS, HGTP14N37G3VL
Electrical Specifications
PARAMETER Gate to Emitter Breakdown Voltage Current Turn-On Delay Time Resistive Load Current Turn-On Rise Time Resistive Load Current Turn-Off Time Inductive Load Inductive Use Test TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL BVGES td(ON)I TEST CONDITIONS IGES = 2mA IC = 6.5A, RG = 1k, VGE = 5V, RL = 2.1, VDD = 14V, TJ = 150oC (Figure 14) IC = 6.5A, RG = 1k VGE = 5V, RL = 2.1 VDD = 14V, TJ = 150oC (Figure 14) MIN 12 TYP 14 1 MAX 4 UNITS V s
trI
-
3
7
s
td(OFF)I + tfI IC = 6.5A, RG = 1k VGE = 5V, L = 300H VDD = 300V, TJ = 150oC (Figure 14) ISCIS L = 3mH, VG = 5V, RG = 1k (Figures 1 and 2) (Figure 18) TC = 150oC TC = 25oC
-
10
30
s
11.5 15 -
-
1.1
A A
oC/W
Thermal Resistance
RJC
Typical Performance Curves
ISCIS , INDUCTIVE SWITCHING CURRENT (A) 60
Unless Otherwise Specified
ISCIS, INDUCTIVE SWITCHING CURRENT (A) 56 RG = 1k, VGE = 5V 48 40 32 24 16 8 0 TJ = 150oC TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V
RG = 1k, VGE = 5V 52 44 36 28 20 12 4 40 TJ = 150oC 80 120 160 200 TJ = 25oC ISCIS CAN BE LIMITED BY gfs at VGE = 5V
0
2
4
6
8
10
tAV, TIME IN AVALANCHE (ms)
L, INDUCTANCE (mH)
FIGURE 1. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs TIME IN AVALANCHE
FIGURE 2. SELF CLAMPED INDUCTIVE SWITCHING CURRENT vs INDUCTANCE
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1.28 ICE = 6A 1.24 1.20 1.16 1.12 1.08 1.04 1.00 -50 VGE = 4.5V VGE = 5.0V VGE = 4.0V
1.50 ICE = 10A 1.46 VGE = 4.0V
1.42 VGE = 4.5V
1.38
1.34
VGE = 5.0V
25
100
175
1.30 -50
25
100
175
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERARURE
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs JUNCTION TEMPERATURE
3
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
ICE, COLLECTOR TO EMITTER CURRENT (A) 45 DUTY CYCLE < 0.5%, TJ = 175oC PULSE DURATION = 250s VGE = 4.5V 30 VGE = 4.0V 15
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 5.0V
45
DUTY CYCLE < 0.5%, TJ = 150oC PULSE DURATION = 250s VGE = 4.5V
VGE = 5.0V
30 VGE = 4.0V
15
0
0
1
2
3
4
5
0
0
1
2
3
4
5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
60 50
DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250s VGE = 4.5V
70 60 50 40
VGE = 5.0V
DUTY CYCLE < 0.5%, TJ = -40oC PULSE DURATION = 250s VGE = 4.5V
VGE = 5.0V
40 30 20 10 0 VGE = 4.0V
VGE = 4.0V 30 20 10 0
0
1
2
3
4
5
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 7. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. COLLECTOR TO EMITTER ON-STATE VOLTAGE
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
60 VGE 50 40 30 20 10 0 8.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V
TJ = 25oC
40
DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s
32 TJ = 150oC 24
16 TJ = 25oC 8 TJ = -40oC 1 2 3 4 5
0
0
1
2
3
4
5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 9. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 10. TRANSFER CHARACTERISTIC
4
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
28 ICE , DC COLLECTOR CURRENT (A) VGE = 5V 24 20 16 12 8 4 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) VGE(TH) , THRESHOLD VOLTAGE (V)
Unless Otherwise Specified (Continued)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 -50 ICE = 1mA VCE = VGE
25
100
175
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 12. THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
10000
16 ICE = 6.5A, VGE = 5V, RG = 1k VECS = 24V SWITCHING TIME (s) 14 RESISTIVE tOFF 12 10 8 6 RESISTIVE tON 4 INDUCTIVE tOFF
LEAKAGE CURRENTS (A)
1000
100 VCES = 300V 10
1
VCES = 250V
0.1 25
50
75
100
125
150
175
2
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 13. LEAKAGE CURRENT vs JUNCTION TEMPERATURE
FIGURE 14. SWITCHING TIME vs JUNCTION TEMPERATURE
2400 FREQUENCY = 1MHz 2000 C, CAPACITANCE (pF) 1600 CIES 1200 800 400 0 VGE , GATE TO EMITTER VOLTAGE (V)
8
IG(REF) = 1mA, RL = 1.865, TJ = 25oC
6 VCE = 12V 4
CRES COES 0 5 10 15 20 25
2 VCE = 6V 0
0
8
16
24
32
40
48
56
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. GATE CHARGE WAVEFORMS
5
HGT1S14N37G3VLS, HGTP14N37G3VL Typical Performance Curves
360 BVCER , BREAKDOWN VOLTAGE (V) TJ (oC) 350 -55 25 150 340 175 ICER = 10mA
Unless Otherwise Specified (Continued)
330
320 0 2 4 6 8 10 RG , GATE SERIES RESISTANCE (k)
FIGURE 17. BREAKDOWN VOLTAGE vs SERIES GATE RESISTANCE
ZJC , NORMALIZED THERMAL RESPONSE
100 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 PD t2 100 t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 18. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuits
3mH VDD C RG = 1k DUT G E 5V G
R or L
LOAD
C RG
PULSE GEN
DUT
+
E
VDD
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. tON AND tOFF SWITCHING TEST CIRCUIT
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HGT1S14N37G3VLS, HGTP14N37G3VL TO-263AB
H1 TERM. 4 D
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E A A1
L2 L1 1 3
L
b e e1
TERM. 4
b1
J1 0.450 (11.43)
c
L3
b2
0.350 (8.89) 0.700 (17.78)
3
1 0.080 TYP (2.03) 0.062 TYP (1.58)
0.150 (3.81)
MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS
INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 A1 0.048 0.052 1.22 1.32 4, 5 b 0.030 0.034 0.77 0.86 4, 5 b1 0.045 0.055 1.15 1.39 4, 5 b2 0.310 7.88 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.405 0.425 10.29 10.79 E 0.395 0.405 10.04 10.28 e 0.100 TYP 2.54 TYP 7 e1 0.200 BSC 5.08 BSC 7 H1 0.045 0.055 1.15 1.39 J1 0.095 0.105 2.42 2.66 L 0.175 0.195 4.45 4.95 L1 0.090 0.110 2.29 2.79 4, 6 L2 0.050 0.070 1.27 1.77 3 L3 0.315 8.01 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 10 dated 5-99.
1.5mm DIA. HOLE
4.0mm USER DIRECTION OF FEED 2.0mm 1.75mm C L
TO-263AB
24mm TAPE AND REEL
24mm
16mm
COVER TAPE
40mm MIN. ACCESS HOLE 30.4mm
13mm 330mm 100mm
GENERAL INFORMATION 1. 800 PIECES PER REEL. 2. ORDER IN MULTIPLES OF FULL REELS ONLY. 3. MEETS EIA-481 REVISION "A" SPECIFICATIONS. 24.4mm
7
HGT1S14N37G3VLS, HGTP14N37G3VL TO-220AB
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A OP Q H1 D E1 45o D1 TERM. 4 E A1
INCHES SYMBOL A A1 b b1 c D D1 E E1 e e1 MIN 0.170 0.048 0.030 0.045 0.014 0.590 0.395 MAX 0.180 0.052 0.034 0.055 0.019 0.610 0.160 0.410 0.030 0.100 TYP 0.200 BSC 0.235 0.100 0.530 0.130 0.149 0.102 0.255 0.110 0.550 0.150 0.153 0.112
MILLIMETERS MIN 4.32 1.22 0.77 1.15 0.36 14.99 10.04 MAX 4.57 1.32 0.86 1.39 0.48 15.49 4.06 10.41 0.76 2.54 TYP 5.08 BSC 5.97 2.54 13.47 3.31 3.79 2.60 6.47 2.79 13.97 3.81 3.88 2.84 NOTES 3, 4 2, 3 2, 3, 4 5 5 6 2 -
L1
b1 b c
L 60o 1 2 3
e e1
J1
H1 J1 L L1 OP Q
LEAD Lead No. 1 Lead No. 2 Lead No. 3 Term. No. 4 Mounting Flange
TERMINAL Gate Collector Emitter Collector
NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 2 dated 7-97.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, 96, Sec. 1, Chien-kuo North, Taipei, Taiwan 104 Republic of China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369
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