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| ADE-208-353 B (Z) THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application Power switching Over temperature shut-down capability TO-220AB Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut- down circuit in the gate area. And this ciruit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over curretn etc. * Logic level operation (4 to 6 V Gate drive) * High endurance capability against to the short circuit * Built-in the over temperature shut-down circuit * Latch type shut-down operation (Need 0 voltage recovery) Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Ratings 60 16 -2.8 20 40 20 50 150 -55 to +150 Unit V V V A A A W C C 1. Gate 2. Drain 3. Source D 1 2 G 3 Gate resistor Tempe- rature Sencing Circuit Latch Circuit Gate Shut- down Circuit S -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Pch** Tch Tstg IDR ID(pulse)* ID VGSSVGSS+ -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10s, duty cycle < 1 % ** Value at Tc = 25C Table 2 Typical Operation Characteristics HAF2001 Item Input voltage Symbol VIH VIL Input current (Gate non shut down) IIH IIL II Input current (Gate shut down) IIH(sd)1 IIH(sd)2 Shut down temperature Tsd Min 3.5 -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.8 0.35 175 Max -- 1.2 100 50 1 -- -- -- Unit V V A A A mA mA C Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 8 V, VDS = 0 Vi = 3.5 V, VDS = 0 Channel temperature Test conditions -------------------------------------------------------------------------------------- ---------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------- ---------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- HAF2001 Table 3 Electrical Characteristics (Ta = 25C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol ID1 ID2 Min 10 -- 60 Typ -- -- -- -- -- -- -- -- -- 0.8 0.35 -- -- 50 30 12 630 7.5 29 34 26 1.0 110 1.8 0.7 Max -- 10 -- -- -- 100 50 1 -100 -- -- 250 2.25 65 43 -- -- -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A V m m S pF s s s s V ns ms ms IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 50 A / s VGS = 5 V, VDD = 12 V VGS = 5 V, VDD = 24 V Test conditions VGS = 3.5 V, VDS = 10 V -------------------------------------------------------------------------------------- ---------------------------------------------------------- V(BR)DSS ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = 8 V, VDS = 0 VGS = 1.2 V, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- V(BR)GSS + 16 V(BR)GSS - -2.8 IGSS + 1 -- -- -- -- -- -- -- 1.0 -- -- 6 -- -- -- -- -- -- -- -- -- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------- IGSS + 2 IGSS + 3 IGSS - VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 ---------------------------------------------------------- ---------------------------------------------------------- -------------------------------------------------------------------------------------- Input current (shut down) VGS = -2.4 V, VDS = 0 IGS(op)1 VGS = 8 V, VDS = 0 ---------------------------------------------------------- -------------------------------------------------------------------------------------- Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time (Note 1) IGS(op)2 IDSS VGS = 3.5 V, VDS = 0 VDS = 50 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------- RDS(on) |yfs| Coss td(on) tr ID = 10 A , VGS = 10 V* ID = 10 A* VDS = 10 V RDS(on) ID = 10 A , VGS = 4 V* VGS(off) ID = 1 mA, VDS = 10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- VDS = 10 V , VGS = 0 f = 1 MHz ID = 5 A VGS = 5 V RL = 6 -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- tf VDF trr tos1 td(off) -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------- tos2 -------------------------------------------------------------------------------------- (Note 1) Including the junction temperature taise of the over loaded condition. * Pulse Test HAF2001 Power vs. Temperature Derating 80 Pch (W) I D (A) 500 Maximum Safe Operation Area 60 Thermal shut down 200 Operation area 100 50 20 10 5 DC PW 1 20 s 10 m 0 s Channel Dissipation Drain Current 40 20 10 m ion s (T 2 Operation in this area c= is limited by RDS(on) 25 1 Op = s er at 0.5 Ta = 25 C 0 50 100 150 Tc (C) 200 0.3 0.5 1 2 5 10 20 C) 50 100 Case Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics 50 10 V 8V 6V 5V 30 4V Drain Current 20 3.5 V VGS = 3 V Pulse Test (A) 50 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 40 40 ID 30 Tc = -25 C 25 C 75 C Drain Current 20 10 10 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) HAF2001 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 2.0 Pulse Test 0.5 Static Drain to Source State Resistance vs. Drain Current Pulse Test 0.2 0.1 V GS = 4 V 1.6 1.2 I D = 20 A 0.8 0.05 0.4 10 A 5A 0.02 0.01 1 2 V GS = 10 V 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 5 10 20 50 100 200 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 V GS = 4 V I D = 20 A 10 A 5A 100 50 20 10 Forward Transfer Admittance vs. Drain Current V DS = 10 V Pulse Test 0.06 Tc = -25 C 25 C 0.04 V GS = 10 V I D = 20 A 5 A, 10 A 5 75 C 0.02 0 -40 2 1 0.5 0 40 80 120 160 Case Temperature Tc (C) 1 2 5 10 20 50 Drain Current I D (A) HAF2001 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Switching Time t (s) 500 di / dt = 50 A / s V GS = 0, Ta = 25 C 1000 500 Switching Characteristics V GS = 5 V, V DD = 30 V PW = 300 s, duty < 1 % 200 100 50 200 t d(off) 100 50 20 10 0.5 tf tr t d(on) 1 2 5 10 20 Drain Current I D (A) 50 20 10 0.5 1 2 5 10 20 50 Reverse Drain Current I DR (A) Reverse Drain Current vs. Souece to Drain Voltage 50 Reverse Drain Current I DR (A) Pulse Test 40 Capacitance C (pF) 10000 Typical Capacitance vs. Drain to Source Voltage 1000 Coss 30 VGS = 5 V 0V 20 100 VGS = 0 f = 1 MHz 10 10 0 0.4 0.8 1.2 1.6 2.0 0 10 20 30 40 50 Source to Drain Voltage V SD (V) Drain to Source Voltage V DS (V) HAF2001 Gate to Source Voltage vs. Shutdown Time of Load-Short Test 10 V GS (V) V DD= 36 V 24 V 12 V 9V Shutdown Case Temperature Tc (C) 200 Shutdown Case Temperature vs. Gate to Source Voltage 8 180 I D= 5 A Gate to Source Voltage 6 160 4 140 2 0 0.1 0.2 0.5 1 2 5 10 20 50 100 120 100 0 Shutdown Time of Load-Short Test Pw (mS) 2 4 6 Gate to Source Voltage 8 10 V GS (V) TTL Drive Characteristics 10 ID=5A Input Current I I (mA) Input Voltage V I (V) 8 0.8 1.0 Test Circuit RL + VCC =5V - II Rg D*U*T 6 VI 4 II 0.6 HD74LS08 V I 0.4 2 0 0.01 0.03 0.2 0 ID 0 5A 0.1 0.3 1 3 10 VI 0 II 0 Thermal shut down Gate Series Resistance R G (k ) HAF2001 Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.2 0.3 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.50 C/W, Tc = 25 C PDM PW T 0.0 1 0.0 1 o sh 2 lse D= 0.03 PW T tp u 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit VGS Monitor D.U.T. RL VGS VGS 5V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr HAF2001 Package Dimensions Unit : mm * HDPAK 3.0max 1.27 11.5 max 9.8 max 7.6 min 0.1 f 3.6 + 0.08 - 4.8 max 1.5 max 6.3 min 18.5 0.5 1.5 max 12.7 min 15.3 max 0.5 7.8 0.5 0.76 0.1 2.5 0.5 5.1 0.5 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC |
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