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| THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability ADE-208-503 1st. Edition Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. * Logic level operation (4 to 6 V Gate drive) * High endurance capability against to the short circuit * Built-in the over temperature shut-down circuit * Latch type shut-down operation (Need 0 voltage recovery) Outline HAF2002 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS+ VGSS- ID I D(pulse)* I DR Pch * 2 Tch Tstg 1 Ratings 60 16 -2.8 20 40 20 30 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate non shut down) Shut down temperature I IH(sd)1 I IH(sd)2 Tsd Min 3.5 -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.8 0.35 175 Max -- 1.2 100 50 1 -- -- -- Unit V V A A A mA mA C Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical Characteristics (Ta = 25C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS+ V(BR)GSS- I GSS+1 I GSS+2 I GSS+3 I GSS- Input current (shut down) I GS(op)1 I GS(op)1 Zero gate voltege drain current I DSS Min 10 -- 60 16 -2.8 -- -- -- -- -- -- -- 1.0 -- -- 6 -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 0.8 0.35 -- -- 50 30 12 630 7.5 29 34 26 1.0 110 Max -- 10 -- -- -- 100 50 1 -100 -- -- 250 2.25 65 43 -- -- -- -- -- -- -- -- Unit A mA V V V A A A A mA mA A V m m S pF s s s s V ns I F = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt =50A/s Test Conditions VGS = 3.5V, VDS = 2V VGS = 1.2V, VDS = 2V I D = 10mA, VGS = 0 I G = 100A, VDS = 0 I G = -100A, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VGS = 1.2V, VDS = 0 VGS = -2.4V, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1mA, VDS = 10V ID = 10A, VGS = 4V * 1 I D = 10A, VGS = 10V * 1 I D = 10A, VDS = 10V * 1 VDS = 10V , VGS = 0 f = 1 MHz I D = 5A, VGS = 5V RL = 6 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time |yfs| Coss t d(on) tr t d(off) tf VDF t rr 3 HAF2002 Electrical Characteristics (Ta = 25C) Item Over load shut down operation time * 2 Symbol t os1 t os2 Min -- -- Typ 1.8 0.7 Max -- -- Unit ms ms Test Conditions VGS = 5V, VDD = 12V VGS = 5V, VDD = 24V Notes: 1. Pulse test 2. Including the junction temperature raise of the over loaded condition. * See characteristic curve of HAF2001. Main Characteristics 4 HAF2002 5 HAF2002 Package Dimensions Unit: mm 6 HAF2002 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 7 |
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