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HL7853MG GaAlAs Laser Diode Description The HL7853MG is a high power 0.78 m band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, and various other types of optical equipment. Features * * * * * High output power: 40 mW CW Visible light output: p = 785 mm Typ Small beam ellipticity: 9.5 : 23 Built-in monitor photodiode Compact package (5.6 mm) 181 HL7853MG Absolute Maximum Ratings (TC = 25C) Item Optical output power Pulsed optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Note: Symbol PO PO (pulse) VR (LD) VR (PD) Topr Tstg Rated Value 40 50* 2 30 -10 to +60 -40 to +85 1 Unit mW mW V V C C 1. Maximum 50% duty cycle, maximum 1 s pulse width Optical and Electrical Characteristics (TC = 25 3 C) Item Optical ouput power Threshold current Slope efficiency LD operating voltage Lasing wavelength Beam divergence (parallel) Beam divergence (perpendicular) Monitor current Astigmatism Symbol PO Ith Vop p // Is AS Min 40 -- 0.35 -- 775 8 18 9 -- Typ -- 45 0.55 2.3 785 9.5 23 -- 5 Max -- 70 0.7 2.7 795 12 28 -- -- Unit mW mA mW/mA V nm deg. deg. A m 24 mW/ { I (32 mW)-I (8 mW)} PO = 40 mW PO = 40 mW PO = 40 mW, FWHM PO = 40 mW, FWHM PO = 4 mW, VR(PD) = 5 V PO = 5 mW, NA = 0.4 Test Conditions Kink free 182 HL7853MG Typical Characteristic Curves 183 HL7853MG Typical Characteristic Curves (cont) 184 |
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