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| ADE-208-026B(Z) HSB88WS Silicon Schottky Barrier Diode for Double Balanced Mixer Preliminary Rev. 2 Sep. 1993 Features * Small VF and C. * Good for surface mounting on printed circuit board. * Each diode can be biased. * Wideband operation. Pin Arrangement 4 3 2 1 Ordering Information Type No. HSB88WS Mark Silver Package Code MOP 5 6 7 8 (Top view) Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Average forward current Power dissipation Junction temperature Operation temperature Storage temperature * 4 Devices total Symbol VR Io* Pd * Tj Topr Tstg Value 10 15 150 125 -40 to + 85 -55 to +125 Unit V mA mW C C C Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Symbol VF1 VF2 IR1 IR2 Min 365 520 -- -- -- -- -- 30 Typ -- -- -- -- -- -- -- -- Max 435 600 0.2 10 0.85 0.2 15 -- Unit mV A pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V , f = 1 MHz VR = 0 V , f = 1 MHz IF = 10 mA *C=200pF,Both forward and reverse direction 1 pulse. Capacitance C Capacitance deviation C Forward voltage deviation VF ESD-Capability -- * Failure criterion ; IR 50A at VR = 10 V ** Deviation between 4 devices in one package HSB88WS 10-2 10 Forward current I F (A) -3 10 -5 10 10 10 10 -5 Reverse current I R (A) 0 0.2 0.4 0.6 10 -4 10 -6 -6 10 -7 -7 -8 -9 10 -8 10 10 -10 10 -9 0 2 4 6 8 10 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz 1.0 Capacitance C (pF) 10 -1 10-2 -1 10 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSB88WS Package Dimensions 0.65 - 0.3 + 0.2 Unit: mm 0~0.2 2.8 - 0.6 1.5 + 0.3 0.65 + 0.2 - 0.3 (1.27) Index mark (silver) (1.27) 0.4 - 0.05 (4.71) (1.27) + 0.10 + 0.10 - 0.06 0.45 Numbers within parentheses are reference values. 0.2 1.1 + 0.1 - HITACHI Code JEDEC Code EIAJ Code Weight (g) MOP -- -- 0.020 0.8 0~0.1 0.16 |
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