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| ADE-208-027C(Z) HSM123 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 3 Aug. 1995 Features * Low capacitance, proof against high voltage. * Fast recovery time. * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM123 Laser Mark A9 Package Code MPAK (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings ** (Ta = 25C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Symbol VRM VR IFM IFSM * Io Tj Tstg Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C Average forward current Junction temperature Storage temperature * Within 1s forward surge current. ** Per one device Electrical Characteristics * (Ta = 25C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF1 VF2 VF3 IR C trr Min -- -- -- -- -- -- Typ 0.70 0.79 0.85 -- 1.0 -- Max 1.0 1.0 1.2 0.1 4.0 3.0 Unit V A pF ns Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF= 10mA, VR=6V, RL=50 * Per one device HSM123 -2 10 10 Forward current I F (A) 10 -5 -3 10 -5 Reverse current I R (A) 0 0.2 0.4 0.6 0.8 1.0 10 -4 10 -6 10 -7 10 -6 10 10 10 -7 10 -8 -8 -9 10 -9 0 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 60 20 80 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 100 f=1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 2 HSM123 Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 1.9 0.3 2.8 + 0.1 - 0.3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 A9 1.5 0 - 0.10 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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