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Datasheet File OCR Text: |
ADE-208-082C(Z) HVM14 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Preliminary Rev. 3 May. 1993 Features * Low forward resistance. (rf =7.0 max) * Low capacitance. (C=0.25pF typ) * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HVM14 Laser Mark H5 Package Code MPAK (Top View) 1 NC 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 100 125 -55 to +125 Unit V mA mW C C Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf -- Min -- -- -- -- 200 Typ -- -- 0.25 -- -- Max 1.0 100 -- 7.0 -- Unit V nA pF V Test Condition IF = 50 mA VR = 50 V VR = 50 V , f = 1 MHz IF = 10 mA, f = 100 MHz *C=200pF, Both forward and reverse direction 1 pulse. * Failure criterion ; IR 200nA at VR = 50 V HVM14 10 -1 10 -8 10 Forward current I F (A) -3 10 -5 Reverse current I R (A) 0.6 0.8 10 -9 10 -10 10 -7 10 10 -9 -11 10 -11 0 0.2 0.4 1.0 10 -12 0 10 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 40 30 20 Reverse voltage VR (V) 50 Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 4 f=100MHz Forward resistance r f ( ) 2 10 Capacitance C (pF) 10 3 10 2 1.0 10 10 -1 1.0 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 10 -5 10 -4 10 -3 10 -2 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current HVM14 Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 H5 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 NC 2 Anode 3 Cathode 0.3 1.1 - 0.1 + 0.2 HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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