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  Datasheet File OCR Text:
 ADE-208-082C(Z)
HVM14 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Preliminary Rev. 3 May. 1993 Features
* Low forward resistance. (rf =7.0 max) * Low capacitance. (C=0.25pF typ) * MPAK package is suitable for high density surface mounting and high speed assembly.
2
Pin Arrangement
3
1
Ordering Information
Type No. HVM14 Laser Mark H5 Package Code MPAK
(Top View)
1 NC 2 Anode 3 Cathode
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 50 50 100 125 -55 to +125 Unit V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol VF IR C rf -- Min -- -- -- -- 200 Typ -- -- 0.25 -- -- Max 1.0 100 -- 7.0 -- Unit V nA pF V Test Condition IF = 50 mA VR = 50 V VR = 50 V , f = 1 MHz IF = 10 mA, f = 100 MHz *C=200pF,
Both forward and reverse direction 1 pulse.
* Failure criterion ; IR 200nA at VR = 50 V
HVM14
10
-1
10
-8
10 Forward current I F (A)
-3
10
-5
Reverse current I R (A) 0.6 0.8
10
-9
10
-10
10
-7
10 10
-9
-11
10
-11
0
0.2
0.4
1.0
10
-12
0
10
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
40 30 20 Reverse voltage VR (V)
50
Fig.2 Reverse current Vs. Reverse voltage
10 f=1MHz
4
f=100MHz
Forward resistance r f ( )
2
10 Capacitance C (pF)
10
3
10
2
1.0
10
10
-1
1.0
1.0
10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage
10
10
-5
10
-4
10
-3
10
-2
Forward current I F (A) Fig.4 Forward resistance Vs. Forward current
HVM14
Package Dimensions
0.65 - 0.3
+ 0.1
Unit: mm
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
H5
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 NC 2 Anode 3 Cathode
0.3
1.1 - 0.1
+ 0.2
HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011


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