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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The Wideband IC Line
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD -- - 32 dBc Drain Efficiency -- 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain -- 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM -- 1% rms Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 97 Pilot, Sync, Paging, Traffic Codes 8 through 13 Power Gain -- 30 dB ACPR @ 885 kHz Offset = - 61 dBc @ 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc @ 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc @ 1 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * Also Available in Gull Wing for Surface Mount * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1 VRG1 VDS2 VDS1
MW4IC2020MBR1 MW4IC2020GMBR1
1805 - 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020MBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GMBR1
PIN CONNECTIONS
GND VDS2 VRD1 VRG1 VDS1 RFin VDS3/RFout VGS1 VGS2 VGS3 GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND
3 Stages IC
14
RFin
VDS3/ RFout
(Top View) NOTE: Exposed backside flag is source Functional Block Diagram terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987.
REV 4
VGS1 VGS2 VGS3
Quiescent Current Temperature Compensation
13 12
GND
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 1
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value 65 - 0.5, +15 - 65 to +175 175 20 Unit Vdc Vdc C C dBm
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22 - A113 Rating 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz Input Return Loss Intermodulation Distortion Stability (100 mWIRL IMD
No Spurious > - 60 dBc
TYPICAL PERFORMANCES (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHzDelay
ns
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (continued)
MW4IC2020MBR1 MW4IC2020GMBR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit TYPICAL CDMA PERFORMANCES (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 W Avg., I1930 MHzTYPICAL GSM EDGE PERFORMANCES (In Modified GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 W Avg., 1805 MHzMOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 3
VD2 + VD1 + C1 RF INPUT Z1 C7 VG1 VG2 VG3 R1 R2 C4 R3 C6 Z2 6 C10 7 NC 8 9 10 11 Quiescent Current Temperature Compensation C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 C8 Z9 + C3
VD3
14
Z3
C9 Z4
Z5
Z6
Z7 C13 C14
Z8
RF OUTPUT
NC 13 12
Z1 Z2 Z3 Z4 Z5
1.820 0.245 0.345 0.327 0.271
x 0.087 Microstrip x 0.087 Microstrip x 0.236 Microstrip x 0.087 Microstrip x 0.087 Microstrip
Z6 Z7 Z8 Z9 PCB
0.303 x 0.087 Microstrip 0.640 x 0.087 Microstrip 0.334 x 0.087 Microstrip 1.231 x 0.043 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 1. MW4IC2020MBR1(GMBR1) Test Circuit Schematic
Table 1. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values
Part C1, C2, C3 C4 C5, C6, C8 C7 C9, C11 C10 C12 C13 C14 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M035 12065C224K28 100B6R8CW 100B0R5BW 100B1R8BW 100B2R2BW 100B1R0BW 100B0R3BW 100B100GW Manufacturer AVX AVX ATC ATC ATC ATC ATC ATC ATC
MW4IC2020MBR1 MW4IC2020GMBR1 4
MOTOROLA RF DEVICE DATA
C2 VD2 VD1
MW4IC2020 Rev 1
C3
C8 C5
VD3
C1 C6 C14 C7 C9 C10 C4 VG1 R1 R2 VG2 R3 VG3 GND C11 C12 C13
Figure 2. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 32 30 28 26 24 22 20 18 16 1800 1850 1900 f, FREQUENCY (MHz) 1950 VDD = 26 Vdc, Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 100 kHz Tone Spacing D IMD -35 -40 2000 IRL Gps 0 -5 -10 -15 -20 -25 -30
Figure 3. Two - Tone Wideband Performance
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 0.1 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1840 MHz, 100 kHz Tone Spacing 3rd Order
-10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz, 100 kHz Tone Spacing
3rd Order
1
10
100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Intermodulation Distortion Products versus Output Power
Figure 5. Intermodulation Distortion Products versus Output Power
35 Gps 33 G ps , POWER GAIN (dB) 31 29 D 27 25 85_C 23 0.1 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW)
36 30 D, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) TC = -30_C 24 18 12 6 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG.
35 TC = -30_C 33 -30_C 31 25_C 29 27 25 23 0.1 85_C D 85_C 25_C Gps
18 15 12 9 6 VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, IDQ3 = 250 mA f = 1960 MHz, 1-Carrier N-CDMA 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. D, DRAIN EFFICIENCY (%)
Figure 6. Power Gain and Drain Efficiency versus Output Power
Figure 7. Power Gain and Drain Efficiency versus Output Power
MW4IC2020MBR1 MW4IC2020GMBR1 6
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB
-45 VDD = 26 Vdc, IDQ1 = 80 mA I = 240 mA, IDQ3 = 250 mA -50 DQ2 f = 1960 MHz, Single-Carrier N-CDMA -55 -60 -65 ALT2 -70 ALT1 -75 0.1 1 85_C
85_C
TC = 25_C -30_C -30_C 25_C
34 32 G ps , POWER GAIN (dB) 30 28 26 24
TC = -30_C
25_C
ACPR
85_C
85_C VDD = 26 Vdc Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 1850 1900 f, FREQUENCY (MHz) 1950 2000
-30_C 25_C 10
22 1800
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Alternate Channel Power Ratio, Alternate 1 and 2 Channel Power Ratio versus Output Power
4 4 3.5 3 2.5 2 1.5 1 0.5 0 0.1 1 10 100 0.1
Figure 9. Power Gain versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 26 Vdc 3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 3 2.5 2 1.5 1 0.5 0
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC = 85_C 25_C -30_C
VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz
TC = 85_C 25_C -30_C
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Error Vector Magnitude versus Output Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) -50 TC = 25_C -55 -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 85_C -30_C -50
Figure 11. Error Vector Magnitude versus Output Power
VDD = 26 Vdc -55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 25_C TC = 25_C
-30_C
85_C 25_C -30_C
85_C 85_C -30_C
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth at 400 and 600 kHz versus Output Power MOTOROLA RF DEVICE DATA
Figure 13. Spectral Regrowth at 400 and 600 kHz versus Output Power MW4IC2020MBR1 MW4IC2020GMBR1 7
TYPICAL CHARACTERISTICS
1.E+09 MTTF FACTOR (HOURS X AMPS 2 )
1.E+08 2nd Stage 1.E+07 1st Stage
3rd Stage
1.E+06
1.E+05
1.E+04 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MW4IC2020MBR1 MW4IC2020GMBR1 8
MOTOROLA RF DEVICE DATA
f = 1805 MHz
f = 1990 MHz Zload*
f = 1805 MHz
f = 1990 MHz Zin Zo = 50
VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ1 = 300 mA, Pout = 20 W PEP Two-Tone CW f MHz 1805 1842 1880 1930 1960 1990 Zin Zin 40.00 + j6.50 40.00 + j2.00 40.00 - j1.50 40.00 - j1.80 40.00 - j2.10 40.00 - j2.60 Zload 8.75 - j1.42 7.00 - j2.70 5.90 - j2.97 5.46 - j3.20 4.30 - j3.35 4.45 - j3.30
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 15. Series Equivalent Output Impedance MOTOROLA RF DEVICE DATA MW4IC2020MBR1 MW4IC2020GMBR1 9
PACKAGE DIMENSIONS
r1 CA B
2X
B
PIN ONE INDEX
E1
A
aaa
M
NOTE 6
aaa
M
e1 e2 D1 e b2 CA
10X 4X
6X
e3 b3 aaa M C A DM
2X
aaa
M
b aaa
M
CA
E
DATUM PLANE
H A
c1
C
SEATING PLANE
F Y
ZONE "J"
E2
Y
A1 7 A2
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
CASE 1329 - 09 ISSUE J TO - 272 WB - 16 PLASTIC MW4IC2020MBR1
MW4IC2020MBR1 MW4IC2020GMBR1 10
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
N VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 F M N b b1 b2 b3 c1 e e1 e2 e3 r1 aaa INCHES MIN MAX .100 .104 .038 .044 .040 .042 .928 .932 .810 BSC .551 .559 .353 .357 .346 .350 .025 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.96 1.12 1.02 1.07 23.57 23.67 20.57 BSC 14.00 14.20 8.97 9.07 8.79 8.89 0.64 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 .10
4X
b1 CA
MOTOROLA RF DEVICE DATA
2X
aaa
M
r1 CAB
E1
B
A
PIN ONE INDEX
4X
aaa
M
b1 CA
NOTE 6
e1 e2 D1 e b2 CA
10X 4X
6X
e3
2X
b3 aaa M C A
D
M
aaa
M
aaa
M
b CA
E
DETAIL Y DATUM PLANE
H A c1 E2 Y Y C
SEATING PLANE
A2
INCHES MIN MAX .100 .104 .001 .004 .099 .110 .928 .932 .810 BSC .429 .437 .353 .357 .346 .350 .018 .024 .01 BSC .600 --- .270 --- .011 .017 .037 .043 .037 .043 .225 .231 .007 .011 .054 BSC .040 BSC .224 BSC .150 BSC .063 .068 2 8 .004 MILLIMETERS MIN MAX 2.54 2.64 0.02 0.10 2.51 2.79 23.57 23.67 20.57 BSC 10.90 11.10 8.97 9.07 8.79 8.89 4.90 5.06 0.25 BSC 15.24 --- 6.86 --- 0.28 0.43 0.94 1.09 0.94 1.09 5.72 5.87 .18 .28 1.37 BSC 1.02 BSC 5.69 BSC 3.81 BSC 1.6 1.73 2 8 .10
L1
GAGE PLANE
t
L DETAIL Y
A1
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 (0.13) TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SINK.
CASE 1329A - 03 ISSUE B TO - 272 WB - 16 GULL PLASTIC MW4IC2020GMBR1
MOTOROLA RF DEVICE DATA
MW4IC2020MBR1 MW4IC2020GMBR1 11
EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE EEEEEE
N E2 VIEW Y - Y
DIM A A1 A2 D D1 E E1 E2 L L1 M N b b1 b2 b3 c1 e e1 e2 e3 r1 t aaa
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MW4IC2020MBR1 MW4IC2020GMBR1 12
MOTOROLA RF DEVICE DATA
MW4IC2020/D

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