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| MZ0912B50Y NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MZ0912B50Y is Designed for General Purpose Class C Power Amplifier Applications up to 1215 MHz. PACKAGE STYLE .400 2L FLG FEATURES: * PG = 7.0 dB min.at 50 W / 1215 MHz * Common Base * OmnigoldTM Metalization System MAXIMUM RATINGS VCE VCB VEB IC PDISS TJ TSTG JC 20 V 65 V 3.0 V 3.0 A 150 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 1.16 C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL ICBO ICES IEBO PG C VCC = 50 VCB = 65 V VCE = 60 V VEB = 1.5 V TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 200 20 200 7.0 42 UNITS mA mA A dB % POUT = 50 W f = 960 - 1215 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/2 ERROR! REFERENCE SOURCE NOT FOUND. MZ0912B50Y TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 2/2 |
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