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LM4050 Precision Micropower Shunt Voltage Reference
May 1999
LM4050 Precision Micropower Shunt Voltage Reference
General Description
Ideal for space critical applications, the LM4050 precision voltage reference is available in the sub-miniature (3 mm x 1.3 mm) SSOT-23 surface-mount package. The LM4050's design eliminates the need for an external stabilizing capacitor while ensuring stability with any capacitive load, thus making the LM4050 easy to use. Further reducing design effort is the availability of several fixed reverse breakdown voltages: 2.500V, 4.096V, 5.000V, 8.192V, and 10.000V. The minimum operating current increases from 60 A for the LM4050-2.5 to 100 A for the LM4050-10.0. All versions have a maximum operating current of 15 mA. The LM4050 utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime parts have an accuracy of better than 0.1% (A grade) at 25C. Bandgap reference temperature drift curvature correction and low dynamic impedance ensure stable reverse breakdown voltage accuracy over a wide range of operating temperatures and currents.
Features
n n n n Small packages: SSOT-23 No output capacitor required Tolerates capacitive loads Fixed reverse breakdown voltages of 2.500V, 4.096V, 5.000V, 8.192V, and 10.000V
Key Specifications (LM4050-2.5)
n Output voltage tolerance (A grade, 25C) n Low output noise (10 Hz to 10 kHz) n Wide operating current range n Industrial temperature range n Low temperature coefficient
0.1% (max)
41 Vrms(typ) 60 A to 15 mA -40C to +85C 50 ppm/C (max)
Applications
n n n n n n n n Portable, Battery-Powered Equipment Data Acquisition Systems Instrumentation Process Control Energy Management Product Testing Automotive Precision Audio Components
Connection Diagrams
SSOT-23
DS101045-1
*This pin must be left floating or connected to pin 2.
Top View See NS Package Number MA03B
(c) 1999 National Semiconductor Corporation
DS101045
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Ordering Information Industrial Temperature Range (-40 C to +85 C)
Reverse Breakdown Voltage Tolerance at 25C and Average Reverse Breakdown Voltage Temperature Coefficient LM4050 Supplied as 250 Units, Tape and Reel LM4050 Supplied as 3000 Units, Tape and Reel
LM4050AIM3-2.5 LM4050AIM3-4.1
LM4050AIM3X-2.5 LM4050AIM3X-4.1 LM4050AIM3X-5.0 LM4050AIM3X-8.2 LM4050AIM3X-10 LM4050BIM3X-2.5 LM4050BIM3X-4.1 LM4050BIM3X-5.0 LM4050BIM3X-8.2 LM4050BIM3X-10 LM4050CIM3X-2.5 LM4050CIM3X-4.1 LM4050CIM3X-5.0 LM4050CIM3X-8.2 LM4050CIM3X-10
0.1%, 50 ppm/C max (A grade)
LM4050AIM3-5.0 LM4050AIM3-8.2 LM4050AIM3-10 LM4050BIM3-2.5 LM4050BIM3-4.1
0.2%, 50 ppm/C max (B grade)
LM4050BIM3-5.0 LM4050BIM3-8.2 LM4050BIM3-10 LM4050CIM3-2.5 LM4050CIM3-4.1
0.5%, 50 ppm/C max (C grade)
LM4050CIM3-5.0 LM4050CIM3-8.2 LM4050CIM3-10
SSOT-23 Package Marking Information
Only three fields of marking are possible on the SSOT-23's small surface. This table gives the meaning of the three fields. Part Marking RCA RDA REA RFA RGA RCB RDB REB RFB RGB RCC RDC REC RFC RGC Third Field: A-C = Initial Reverse Breakdown Voltage or Reference Voltage Tolerance A = 0.1%, B = 0.2%, C = +0.5%, First Field: R = Reference Second Field: C = 2.500V Voltage Option D = 4.096V Voltage Option E = 5.000V Voltage Option F = 8.192V Voltage Option G = 10.000V Voltage Option Field Definition
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Reverse Current Forward Current Power Dissipation (TA = 25C) (Note 3) M3 Package Storage Temperature (Note 2) Lead Temperature M3 Package Vapor phase (60 seconds) Infrared (15 seconds) ESD Susceptibility Human Body Model (Note 4) 20 mA 10 mA 280 mW -65C to +150C
Machine Model (Note 4) 200V See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of soldering surface mount devices.
Operating Ratings(Notes 1, 3)
Temperature Range Industrial Temperature Range Reverse Current LM4050-2.5 LM4050-4.1 LM4050-5.0 LM4050-8.2 LM4050-10.0 (Tmin TA Tmax) -40C TA +85C 60 68 74 91 100 A A A A A to to to to to 15 15 15 15 15 mA mA mA mA mA
+215C +220C 2 kV
LM4050-2.5 Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of 0.1%, 0.2%, and 0.5% respectively. Typical LM4050AIM3 LM4050BIM3 LM4050CIM3 Symbol Parameter Conditions (Note 5) Limits (Note 6) VR Reverse Breakdown Voltage IR = 100 A 2.500 Limits (Note 6) Limits (Note 6) V Units (Limit)
Reverse Breakdown IR = 100 A Voltage Tolerance (Note 7) IRMIN Minimum Operating Current 41
2.5 11
60 65
5.0 14
60 65
13 21
60 65
mV (max) mV (max) A A (max) A (max) ppm/C ppm/C
VR/T Average Reverse Breakdown Voltage Temperature Coefficient (Note 7) VR/IR Reverse Breakdown Voltage Change with Operating Current Change (Note 8)
IR = 10 mA IR = 1 mA IR = 100 A IRMIN IR 1 mA
20 15 15
0.3 0.8 1.2 0.8 1.2 6.0 8.0 0.8 1.2 6.0 8.0
50
50
50
ppm/C (max) mV mV (max) mV (max) mV mV (max) mV (max) Vrms
1 mA IR 15 mA
2.3 6.0 8.0
ZR eN VR
Reverse Dynamic Impedance Wideband Noise
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR IR = 100 A
0.3 41
VHYST
10 Hz f 10 kHz Reverse Breakdown t = 1000 hrs Voltage Long Term Stability T = 25C 0.1C IR = 100 A Output Hysteresis T = -40C to 125C
120 0.7
ppm mV
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LM4050-4.1 Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of 0.1%, 0.2%, and 0.5% respectively. LM4050AIM3 LM4050BIM3 LM4050CIM3 Symbol Parameter Conditions Typical (Note 5) Limits (Note 6) VR Reverse Breakdown Voltage IR = 100 A 4.096 Limits (Note 6) Limits (Note 6) V Units (Limit)
Reverse Breakdown IR = 100 A Voltage Tolerance (Note 7) IRMIN Minimum Operating Current 52
4.1 18
68 73
8.2 22
68 73
21 34
68 73
mV (max) mV (max) A A (max) A (max) ppm/C ppm/C
VR/T Average Reverse Breakdown Voltage Temperature Coefficient(Note 7) VR/IR Reverse Breakdown Voltage Change with Operating Current Change (Note 8)
IR = 10 mA IR = 1 mA IR = 100 A IRMIN IR 1 mA
30 20 20
0.2 0.9 1.2 0.9 1.2 7.0 10.0 0.9 1.2 7.0 10.0
50
50
50
ppm/C (max) mV mV (max) mV (max) mV mV (max) mV (max) Vrms ppm
1 mA IR 15 mA
2.0 7.0 10.0
ZR eN VR
Reverse Dynamic Impedance Wideband Noise
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR IR = 100 A
0.5 93 120
VHYST
10 Hz f 10 kHz Reverse Breakdown t = 1000 hrs Voltage Long Term Stability T = 25C 0.1C IR = 100 A Output Hysteresis T = -40C to 125C
1.148
mV
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LM4050-5.0 Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of 0.1%, 0.2% and 0.5% respectively. LM4050AIM3 LM4050BIM3 LM4050CIM3 Symbol Parameter Conditions Typical (Note 5) Limits (Note 6) VR Reverse Breakdown Voltage IR = 100 A 5.000 Limits (Note 6) (Note 6) V Limits Units (Limit)
Reverse Breakdown IR = 100 A Voltage Tolerance (Note 7) IRMIN Minimum Operating Current 56
5.0 22
74 80
10 27
74 80
25 42
74 80
mV (max) mV (max) A A (max) A (max) ppm/C ppm/C
VR/T Average Reverse Breakdown Voltage Temperature Coefficient (Note 7) VR/IR Reverse Breakdown Voltage Change with Operating Current Change (Note 8)
IR = 10 mA IR = 1 mA IR = 100 A IRMIN IR 1 mA
30 20 20
0.2 1.0 1.4 1.0 1.4 8.0 12.0 1.0 1.4 8.0 12.0
50
50
50
ppm/C (max) mV mV (max) mV (max) mV mV (max) mV (max) (max) Vrms
1 mA IR 15 mA
2.0 8.0 12.0
ZR eN VR
Reverse Dynamic Impedance Wideband Noise
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR IR = 100 A 10 Hz f 10 kHz t = 1000 hrs
0.5 93
Reverse Breakdown Voltage Long Term Stability T = 25C 0.1C IR = 100 A
120 1.4
ppm mV
VHYST Output Hysteresis
T = -40C to 125C
5
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LM4050-8.2 Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of 0.1% and 0.2% and 0.5% respectively. LM4050AIM3 LM4050BIM3 LM4050CIM3 Symbol Parameter Conditions Typical (Note 5) Limits (Note 6) VR Reverse Breakdown Voltage IR = 150 A 8.192 Limits (Note 6) Limits (Note 6) V Units (Limit)
Reverse Breakdown IR = 150 A Voltage Tolerance (Note 7) IRMIN Minimum Operating Current 74
8.2 35
91 95
16 43
91 95
41 68
91 95
mV (max) mV (max) A A (max) A (max) ppm/C ppm/C
VR/T Average Reverse Breakdown Voltage Temperature Coefficient(Note 7) VR/IR Reverse Breakdown Voltage Change with Operating Current Change (Note 8)
IR = 10 mA IR = 1 mA IR = 150 A IRMIN IR 1 mA
40 20 20
0.6
50
50
50
ppm/C (max) mV mV (max) mV (max) mV mV (max) mV (max) Vrms
1.3 2.5 1 mA IR 15 mA 7.0 10.0 18.0
1.3 2.5 10.0 18.0
1.3 2.5 10.0 18.0
ZR eN VR
Reverse Dynamic Impedance Wideband Noise
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR IR = 150 A 10 Hz f 10 kHz t = 1000 hrs
0.6 150
Reverse Breakdown Voltage Long Term Stability T = 25C 0.1C IR = 150 A Output Hysteresis
120 2.3
ppm mV
VHYST
T = -40C to 125C
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LM4050-10.0 Electrical Characteristics (Industrial Temperature Range)
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of 0.1% and 0.2% and 0.5% respectively. LM4050AIM3 LM4050BIM3 LM4050CIM3 Symbol Parameter Conditions Typical (Note 5) Limits (Note 6) VR Reverse Breakdown Voltage IR = 150 A 10.00 Limits (Note 6) Limits (Note 6) V Units (Limit)
Reverse Breakdown IR = 150 A Voltage Tolerance (Note 7) IRMIN Minimum Operating Current 80
10 43
100 103
20 53
100 103
50 83
100 103
mV (max) mV (max) A A (max) A (max) ppm/C ppm/C
VR/T Average Reverse Breakdown Voltage Temperature Coefficient (Note 7) VR/IR Reverse Breakdown Voltage Change with Operating Current Change (Note 8)
IR = 10 mA IR = 1 mA IR = 150 A IRMIN IR 1 mA
40 20 20
0.8
50
50
50
ppm/C (max) mV mV (max) mV (max) mV mV (max) mV (max) Vrms
1.5 3.5 1 mA IR 15 mA 8.0 12.0 23.0
1.5 3.5 12.0 23.0
1.5 3.5 12.0 23.0
ZR eN VR
Reverse Dynamic Impedance Wideband Noise
IR = 1 mA, f = 120 Hz, IAC = 0.1 IR IR = 150 A 10 Hz f 10 kHz t = 1000 hrs
0.7 150
Reverse Breakdown Voltage Long Term Stability T = 25C 0.1C IR = 150 A Output Hysteresis
120 2.8
ppm mV
VHYST
T = -40C to 125C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: If parts are exposed to temperatures outside the specific operating temperature range, the output may shift due to hysteresis. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), JA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/JA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050, TJmax = 125C, and the typical thermal resistance (JA), when board mounted, is 326C/W for the SSOT-23 package. Note 4: The human body model is a 100 pF capacitor discharged through a 1.5 k resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin. Note 5: Typicals are at TJ = 25C and represent most likely parametric norm. Note 6: Limits are 100% production tested at 25C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate National's AOQL. Note 7: The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance [(V R/T)(maxT)(VR)]. Where, VR/T is the VR temperature coefficient, maxT is the maximum difference in temperature from the reference point of 25C to T MIN or TMAX, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where maxT = 65C is shown below:
A-grade: 0.425% = 0.1% 50 ppm/C x 65C B-grade: 0.525% = 0.2% 50 ppm/C x 65C C-grade: 0.825% = 0.5% 50 ppm/C x 65C
Therefore, as an example, the A-grade LM4050-2.5 has an over-temperature Reverse Breakdown Voltage tolerance of 2.5V x 0.425% = 11 mV. Note 8: Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into account separately.
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Typical Performance Characteristics
Output Impedance vs Frequency Output Impedance vs Frequency
DS101045-10
DS101045-11
Reverse Characteristics and Minimum Operating Current
Noise Voltage vs Frequency
DS101045-12
DS101045-13
Thermal Hysteresis
DS101045-29
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Start-Up Characteristics
LM4050-2.5 RS = 30k
DS101045-5
DS101045-7
LM4050-5.0
RS = 30k
LM4050-10.0
RS = 30k
DS101045-8
DS101045-9
Functional Block Diagram
DS101045-14
9
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Applications Information
The LM4050 is a precision micro-power curvature-corrected bandgap shunt voltage reference. For space critical applications, the LM4050 is available in the sub-miniature SSOT-23 surface-mount package. The LM4050 has been designed for stable operation without the need of an external capacitor connected between the "+" pin and the "-" pin. If, however, a bypass capacitor is used, the LM4050 remains stable. Reducing design effort is the availability of several fixed reverse breakdown voltages: 2.500V, 4.096V, 5.000V, 8.192V, and 10.000V. The minimum operating current increases from 60 A for the LM4050-2.5 to 100 A for the LM4050-10.0. All versions have a maximum operating current of 15 mA. LM4050s in the SSOT-23 packages have a parasitic Schottky diode between pin 2 (-) and pin 3 (Die attach interface contact). Therefore, pin 3 of the SSOT-23 package must be left floating or connected to pin 2. The 4.096V version allows single +5V 12-bit ADCs or DACs to operate with an LSB equal to 1 mV. For 12-bit ADCs or DACs that operate on supplies of 10V or greater, the 8.192V version gives 2 mV per LSB. In a conventional shunt regulator application (Figure 1) , an external series resistor (RS) is connected between the supply voltage and the LM4050. RS determines the current that flows through the load (IL) and the LM4050 (IQ). Since load current and supply voltage may vary, RS should be small enough to supply at least the maximum guaranteed IRMIN (spec. table) to the LM4050 even when the supply voltage is at its minimum and the load current is at its maximum value. When the supply voltage is at its maximum and IL is at its minimum, RS should be large enough so that the current flowing through the LM4050 is less than 15 mA. RS is determined by the supply voltage, (VS), the load and operating current, (IL and IQ), and the LM4050's reverse breakdown voltage, VR.
Typical Applications
DS101045-15
FIGURE 1. Shunt Regulator
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Typical Applications
(Continued)
DS101045-16
**Ceramic monolithic *Tantalum
FIGURE 2. LM4050-4.1's Nominal 4.096 breakdown voltage gives ADC12451 1 mV/LSB
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Typical Applications
(Continued)
DS101045-17
FIGURE 3. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage. Nominal clamping voltage is 11.5V (LM4050's reverse breakdown voltage +2 diode VF).
DS101045-18
FIGURE 4. Protecting Op Amp input. The bounding voltage is 4V with the LM4050-2.5 (LM4050's reverse breakdown voltage + 3 diode VF).
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Typical Applications
(Continued)
DS101045-19
FIGURE 5. Precision 4.096V Reference
DS101045-22
DS101045-21
FIGURE 6. Precision 1 A to 1 mA Current Sources
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LM4050 Precision Micropower Shunt Voltage Reference
Physical Dimensions
inches (millimeters) unless otherwise noted
Plastic Surface Mount Package (M3) NS Package Number M03B (JEDEC Registration TO-236AB)
LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Francais Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

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