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MICROCIRCUIT DATA SHEET MNLM113-2-X REV 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode. It features extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. The diode is synthesized using transistors and resistors in a monolithic integrated circuit. As such, it has the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances. The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon-the energy-band gap voltage-makes it useful for many temperature-compensation and temperature-measurement functions. Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 Industry Part Number LM113 NS Part Numbers LM113-2H-QMLV ** LM113-2H-SMD * LM113-2H/883 Prime Die LM113 Controlling Document See Features Page Processing MIL-STD-883, Method 5004 Subgrp Description 1 2 3 4 5 6 7 8A 8B 9 10 11 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 Quality Conformance Inspection MIL-STD-883, Method 5005 1 MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET Features - SMD : 5962- 8671103XA*, 5962-9684303VXA** 2 MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET (Absolute Maximum Ratings) (Note 1) Power Dissipation 100 mW Reverse Current 50 mA Forward Current 50 mA Storage Temperature Range -65 C to +150 C Lead Temperature (Soldering, 10 seconds) Operating Temperature Range 300 C -55 C to + 125 C Note 1: For operating at elevated tempertures, the device must be derated based on a 150 C maximum junction and a thermal resistance of 80C/W junction to case or 440 C/W junction to ambient. 3 MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET Electrical Characteristics DC PARAMETERS SYMBOL Vzr PARAMETER Zener Voltage Ir = 1 mA CONDITIONS NOTES PINNAME MIN 1.195 1.194 Delta Vzr Delta Zener Voltage Forward Voltage Drop Reverse Dynamic Impedance 0.5mA <= Ir <= 20mA 0.5mA <= Ir <= 10mA Vf Rr If = 1mA Ir = 1mA Ir = 10mA 1 1 MAX 1.245 1.246 15 15 1 1 0.8 UNIT V V mV mV V Ohm Ohm SUBGROUPS 1 2, 3 1 2, 3 1, 2, 3 4 4 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Delta calculations performed on JAN S and QMLV devices at Group B, Subgroup 5 "ONLY". Vzr Zener Voltage Note 1: Ir = 1mA -0.02 0.02 V 1 Guaranteed parameter not tested. 4 MNLM113-2-X REV 1A0 MICROCIRCUIT DATA SHEET Graphics and Diagrams GRAPHICS# 09385HR MKT-H02ARC (blank) (blank) DESCRIPTION See attached graphics following this page. 5 |
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