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| P6KE6.8A Series Zener Transient Voltage Suppressors Unidirectional and Bidirectional The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The P6KE6.8A series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: http://onsemi.com * * * * * * * Standard Zener Voltage Range -- 6.8 to 200 V Peak Power -- 600 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V Maximum Temperature Coefficient Specified UL Recognition Response Time is Typically < 1 ns SURMETIC-40 ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 6.8-200 VOLTS 600 WATT PEAK POWER 5 WATTS STEADY STATE PLASTIC CASE 17 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are ORDERING INFORMATION Device P6KEXXXA P6KEXXXARL P6KEXXXCA Bidirectional P6KEXXXCARL Bidirectional Package CASE 17 CASE 17 CASE 17 Shipping 1000 Units/Box Tape and Reel 4000 Units/Reel 1000 Units/Box Tape and Reel 4000 Units/Reel readily solderable POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea CASE 17 MAXIMUM RATINGS Rating Peak Power Dissipation (1) @ TL 25C Steady State Power Dissipation @ TL 75C, Lead Length = 3/8 Derated above TL = 75C Forward Surge Current (2) @ TA = 25C Operating and Storage Temperature Range Lead temperature not less than 1/16 from the case for 10 seconds: 230C NOTES: 1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25C per Figure 2. NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. Symbol PPK PD Value 600 5 50 Unit Watts Watts mW/C Amps C IFSM TJ, Tstg 100 - 55 to +150 (c) Semiconductor Components Industries, LLC, 1999 1 December, 1999 - Rev. 2 Publication Order Number: P6KE6.8A/D P6KE6.8A Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 3.5 V Max, IF** = 50 A (except bidirectional devices). Breakdown Voltage* VBR (Volts) Device Min 6.45 7.13 7.79 8.65 9.5 10.5 11.4 12.4 Nom 6.8 7.5 8.2 9.1 10 11 12 13 Max 7.14 7.88 8.61 9.55 10.5 11.6 12.6 13.7 Working Peak g Reverse Voltage VRWM (Volts) 5.8 6.4 7.02 7.78 8.55 9.4 10.2 11.1 Maximum Reverse Leakage @ VRWM IR (A) 1000 500 200 50 10 5 5 5 Maximum Reverse Surge CurrentIRSM{ CurrentI (Amps) 57 53 50 45 41 38 36 33 Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 Maximum Temperature Coefficient of VBR (%/C) 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 @ IT (mA) 10 10 10 1 1 1 1 1 P6KE6.8A P6KE7.5A P6KE8.2A P6KE9.1A P6KE10A P6KE11A P6KE12A P6KE13A P6KE15A P6KE16A P6KE18A P6KE20A P6KE24A P6KE27A P6KE30A P6KE33A P6KE36A P6KE39A P6KE43A P6KE47A P6KE51A P6KE56A P6KE62A P6KE68A P6KE75A P6KE82A P6KE91A P6KE100A P6KE120A P6KE130A P6KE150A P6KE170A P6KE180A P6KE200A 14.3 15.2 17.1 19 22.8 25.7 28.5 31.4 34.2 37.1 40.9 44.7 48.5 53.2 58.9 64.6 71.3 77.9 86.5 95 114 124 143 162 171 190 15 16 18 20 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 120 130 150 170 180 200 15.8 16.8 18.9 21 25.2 28.4 31.5 34.7 37.8 41 45.2 49.4 53.6 58.8 65.1 71.4 78.8 86.1 95.5 105 126 137 158 179 189 210 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 12.8 13.6 15.3 17.1 20.5 23.1 25.6 28.2 30.8 33.3 36.8 40.2 43.6 47.8 53 58.1 64.1 70.1 77.8 85.5 102 111 128 145 154 171 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 28 27 24 22 18 16 14.4 13.2 12 11.2 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.6 3.3 2.9 2.6 2.4 2.2 21.2 22.5 25.2 27.7 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77 85 92 103 113 125 137 165 179 207 234 246 274 0.084 0.086 0.088 0.09 0.094 0.096 0.097 0.098 0.099 0.1 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.108 0.108 0.108 0.108 Devices listed in bold, italic are ON Semiconductor Preferred devices. *** VBR measured after IT applied for 300 s, IT = square wave pulse or equivalent. *** 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. { Surge current waveform per Figure 4 and derate per Figure 2.* FOR BIDIRECTIONAL APPLICATIONS -- USE CA SUFFIX for P6KE6.8CA through P6KE200CA. Electrical characteristics apply in both directions. Preferred Bidirectional Devices -- P6KE7.5CA P6KE11CA P6KE22CA P6KE27CA P6KE20CA P6KE30CA http://onsemi.com 2 P6KE6.8A Series 100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 PP, PEAK POWER (kW) 10 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA= 25C 10 ms 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 1 0.1 0.1 s 1 s 10 s 100 s 1 ms tP, PULSE WIDTH TA, AMBIENT TEMPERATURE (C) Figure 1. Pulse Rating Curve Figure 2. Pulse Derating Curve tr 10,000 C, CAPACITANCE (pF) 100 VALUE (%) MEASURED @ ZERO BIAS 1000 PEAK VALUE -- IRSM PULSE WIDTH (tp) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 10 s IRSM 2 HALF VALUE - 50 100 MEASURED @ STAND-OFF VOLTAGE (VR) 0.1 10 100 VBR, BREAKDOWN VOLTAGE (VOLTS) 1 1000 0 0 tP 10 1 2 t, TIME (ms) 3 4 Figure 3. Capacitance versus Breakdown Voltage Figure 4. Pulse Waveform PD , STEADY STATE POWER DISSIPATION (WATTS) 3/8 DERATING FACTOR 5 4 3 2 1 0 0 25 50 75 100 125 150 175 TL, LEAD TEMPERATURE (C) 200 3/8 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1 10 s 2 5 10 D, DUTY CYCLE (%) 20 50 100 PULSE WIDTH 10 ms 1 ms 100 s Figure 5. Steady State Power Derating Figure 6. Typical Derating Factor for Duty Cycle http://onsemi.com 3 P6KE6.8A Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure A. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure B. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The P6KE6.8A series has very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend. http://onsemi.com 4 P6KE6.8A Series TYPICAL PROTECTION CIRCUIT Zin Vin LOAD VL V Vin (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. http://onsemi.com 5 P6KE6.8A Series UL RECOGNITION The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. http://onsemi.com 6 P6KE6.8A Series OUTLINE DIMENSIONS Transient Voltage Suppressors -- Axial Leaded 600 Watt Peak Power B D K 2 NOTE: 1. LEAD DIAMETER & FINISH NOT CONTROLLED WITHIN DIM F. INCHES MIN MAX 0.330 0.350 0.130 0.145 0.037 0.043 -- 0.050 1.000 1.250 MILLIMETERS MIN MAX 8.38 8.89 3.30 3.68 0.94 1.09 -- 1.27 25.40 31.75 F A 1 DIM A B D F K F K STYLE 1: PIN 1. ANODE 2. CATHODE CASE 17-02 PLASTIC (Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.) http://onsemi.com 7 P6KE6.8A Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 1N6267A/D |
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