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Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES * Schottky diode across each MOSFET * Low on-state resistance * Fast switching * Logic level compatible * Surface mount package PHN603S SYMBOL D4 QUICK REFERENCE DATA VDS = 25 V G6 D1 G5 D2 G4 D3 ID = 5.5 A RDS(ON) 35 m (VGS = 10 V) RDS(ON) 55 m (VGS = 4.5 V) S3 G1 S1 G2 S2 G3 GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brushless d.c. motor driver. The PHN603S is supplied in the SOT137-1 (SO24) surface mounting package. PINNING PIN 1,4 2 3 5,8 6 7 9,12 10 11 13 14-16, 18-20, 22-24 17 21 DESCRIPTION drain 1 source 1 gate 1 drain 2 source 2 gate 2 drain 3 source 3 gate 3 gate 4 drain 4 gate 5 gate 6 SOT137-1 (SO24) Top view 1 24 12 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDS VDGR VGS ID IDM Ptot Ptot Tstg, Tj PARAMETER Repetitive peak drain-source voltage Continuous drain-source voltage Drain-gate voltage Gate-source voltage Drain current per device (DC) Drain current per device (pulse peak value) Total power dissipation per device Total power dissipation all devices conducting Storage & operating temperature CONDITIONS Tj = 25 C to 150C Tj 80 C1 RGS = 20 k Ta = 25 C Ta = 100 C Ta = 25 C Ta = 25 C Ta = 100 C Ta = 25 C Ta = 100 C MIN. - 55 MAX. 25 25 25 20 5.5 3.5 22 1.67 0.67 2.78 1.11 150 UNIT V V V V A A A W W W W C 1 The maximum permissible junction temperature prior to application of continuous drain-source voltage is limited by thermal runaway. October 1998 1 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver THERMAL RESISTANCES SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint Per device All devices conducting TYP. MAX. PHN603S UNIT 75 42 - K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 1 mA VDS = VGS; ID = 1 mA Tj = 150C VGS = 10 V; ID = 5 A VGS = 4.5 V; ID = 2.5 A VGS = 10 V; ID = 5 A; Tj = 150C Gate source leakage current VGS = 20 V; VDS = 0 V Zero gate voltage drain VDS = 25 V; VGS = 0 V; current Tj = 100C Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Input capacitance Output capacitance Feedback capacitance ID = 1 A; VDD = 20 V; VGS = 10 V MIN. 25 1.0 0.4 TYP. MAX. UNIT 1.8 30 50 50 10 0.2 5 17 1.7 5.2 8 11 31 17 650 320 130 35 55 60 100 1.0 10 V V V m m m nA mA mA nC nC nC ns ns ns ns pF pF pF VDD = 20 V; ID = 1 A; VGS = 10 V; RG = 6 Resistive load VGS = 0 V; VDS = 20 V; f = 1 MHz SCHOTTKY DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL IF IFRM VF trr PARAMETER Continuous forward diode current Repetitive peak forward diode current Diode forward voltage Reverse recovery time CONDITIONS Ta = 25 C MIN. IF = 2.5 A; VGS = 0 V IF = 2.5 A; VGS = 0 V, Tj = 100 C IF = 0.5 A to IR = 0.5 A TYP. 0.4 0.3 20 MAX. 5.5 22 0.6 0.55 UNIT A A V V ns October 1998 2 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S Normalised Power Dissipation, PD (%) 120 100 10 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 1 100 Transient Thermal Impedance, Zth j-a (K/W) D = 0.5 0.2 0.1 0.05 0.02 MOSFET P D Single pulse tp D = tp/T T 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 t 1E+01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Ta) Fig.4. Transient thermal impedance; MOSFET. Zth j-a = f(t); parameter D = tp/T Normalised Drain Current, ID (%) 120 100 10 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta (C) 0.1 1 100 Transient Thermal Impedance, Zth j-a (K/W) SCHOTTKY Single pulse P D tp t 0.01 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 pulse width, tp (s) 1E+00 1E+01 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Ta); conditions: VGS 4.5 V Fig.5. Transient thermal impedance; Schottky Diode. Zth j-a = f(t) junctions 100 Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID PHN603S 40K/W 40K/W tp = 100 us Rth j-b 10 1 ms 10 ms 1 d.c. 0.1 100 ms 6 PAIRS MOSFET SCHOTTKY board MOSFET 40K/W Rth b-a 0.01 0.1 1 10 Drain-Source Voltage, VDS (V) 100 ambient Fig.3. Safe operating area. Ta = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Thermal model; typical values. Rth j-b and Rth b-a October 1998 3 35K/W 40K/W SCHOTTKY Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S Drain Current, ID (A) 5 4 10V PHN603S VGS = 3.4 V Tj = 25 C 3.2 V 10 9 8 7 6 5 4 3 2 1 0 0 Transconductance, gfs (S) VDS > ID X RDS(ON) Tj = 25 C PHN603S 4.5 V 150 C 3 2 1 2.4 V 0 0 1 2 3 4 Drain-Source Voltage, VDS (V) 5 2.6 V 3V 2.8 V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Drain current, ID (A) Fig.7. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS Fig.10. Typical transconductance, Tj = 25 C. gfs = f(ID) a Drain-Source On Resistance, RDS(on) (Ohms) 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 1 2 3 Drain Current, ID (A) 4 2.8V 3V 3.2V PHN603S 2 SOT223 30V Trench Normalised RDS(ON) = f(Tj) VGS = 3.4 V 1.5 Tj = 25 C 1 0.5 10V 4.5V 5 0 -50 0 50 Tj / C 100 150 Fig.8. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS Fig.11. Normalised drain-source on-state resistance. RDS(ON)/RDS(ON)25 C = f(Tj) Drain current, ID (A) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 150 C VDS > ID X RDS(ON) PHN603S 5 VGS(TO) / V PHN1013 4 3 typ. 2 Tj = 25 C min. 1 3.5 3 Gate-source voltage, VGS (V) 0 -100 -50 0 50 Tj / C 100 150 200 Fig.9. Typical transfer characteristics. ID = f(VGS) Fig.12. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS October 1998 4 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver PHN603S 100mA Drain current, ID (A) Sub-Threshold Conduction 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Gate-source voltage, VGS (V) ID = 1A Tj = 25 C VDD = 20 V PHN603S 10mA min typ 1mA 100uA 10uA VDS = VGS Tj = 25 C 1uA 0 1 2 3 Gate-source voltage, VGS (V) 4 5 0 5 10 15 Gate charge, QG (nC) 20 25 Fig.13. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C Fig.15. Typical turn-on gate-charge characteristics. VGS = f(QG) Source-Drain Diode Current, IF (A) Capacitances, Ciss, Coss, Crss (pF) 10000 PHN603S 5 4.5 4 3.5 3 2.5 1000 Ciss Coss Crss 100 0.1 1 10 Drain-Source Voltage, VDS (V) 100 2 1.5 1 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 150 C Tj = 25 C VGS = 0 V PHN603S 0.7 0.8 Drain-Source Voltage, VSDS (V) Fig.14. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz Fig.16. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj October 1998 5 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver MECHANICAL DATA SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1 PHN603S D E A X c y HE vMA Z 24 13 Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A 0 5 scale 10 mm DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z (1) 0.9 0.4 0.035 0.016 0.012 0.096 0.004 0.089 0.019 0.013 0.014 0.009 0.419 0.043 0.055 0.394 0.016 8 0o o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 Fig.17. SOT137-1 (SO24) surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Integrated Circuit Packages, Data Handbook IC26. 3. Epoxy meets UL94 V0 at 1/8". October 1998 6 Rev 1.000 Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver DEFINITIONS Data sheet status Objective specification Product specification Limiting values PHN603S This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 7 Rev 1.000 |
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