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PML260SN
N-channel TrenchMOS standard level FET
Rev. 01 -- 22 December 2005 Preliminary data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted plastic package using TrenchMOS technology.
1.2 Features
s Standard level threshold s Very low thermal impedance s Low profile and small footprint s Low on-state resistance
1.3 Applications
s Primary side switching s Portable appliances s DC-to-DC converters
1.4 Quick reference data
s VDS 200 V s RDSon 294 m s ID 8.8 A s QGD = 4.2 nC (typ)
2. Pinning information
Table 1: Pin 1, 2, 3 4 5, 6, 7, 8 Pinning Description source (S) gate (G) drain (D)
8765
D
Simplified outline
Symbol
G
mbb076
S
1234 Transparent top view
SOT873-1
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2: Ordering information Package Name PML260SN HVSON8 Description plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 x 3.3 x 0.85 mm Version SOT873-1 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 3.5 A; tp = 0.05 ms; VDS 100 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C Tmb = 25 C; VGS = 10 V; see Figure 2 and 3 Tmb = 100 C; VGS = 10 V; see Figure 2 Tmb = 25 C; pulsed; tp 10 s; see Figure 3 Tmb = 25 C; see Figure 1 Conditions 25 C Tj 150 C Min -55 -55 Max 200 20 8.8 5.5 15 50 +150 +150 8.8 15 22 Unit V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
2 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
120 Pder (%) 80
03ne36
120 Ider (%) 80
03ne37
40
40
0 0 50 100 150 Tmb (C) 200
0 0 50 100 150 Tmb (C) 200
P tot P der = ------------------------ x 100 % P
tot ( 25 C )
ID I der = -------------------- x 100 % I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature
102 ID (A) 10
Fig 2. Normalized continuous drain current as a function of mounting base temperature
003aab281
Limit RDSon = VDS / ID tp = 10 s
100 s DC 1 1 ms 10 ms
10-1 10-1 1 10 102 VDS (V) 103
Tmb = 25 C; IDM is single pulse; VGS = 10 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
3 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a)
[1]
Thermal characteristics Conditions minimum footprint
[1]
Symbol Parameter thermal resistance from junction to ambient
Min -
Typ 60
Max 2.5 -
Unit K/W K/W
thermal resistance from junction to mounting base see Figure 4
Mounted on a printed-circuit board; vertical in still air
10
003aab280
Zth(j-mb) (K/W)
= 0.5 1 0.2 0.1 0.05 10-1 10-5 0.02 single pulse 10-4 10-3 10-2 10-1 1
tp T t P = tp T
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
4 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; see Figure 9 and 10 Tj = 25 C Tj = 150 C Tj = -55 C IDSS drain leakage current VDS = 160 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RG RDSon gate leakage current gate resistance drain-source on-state resistance VGS = 20 V; VDS = 0 V f = 1 MHz VGS = 10 V; ID = 2.6 A; see Figure 6 and 8 Tj = 25 C Tj = 150 C VGS = 6 V; ID = 2.5 A Dynamic characteristics QG(tot) QGS QGS1 QGS2 QGD VGS(pl) Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge pre-VGS(th) gate-source charge post-VGS(th) gate-source charge gate-drain charge gate-source plateau voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 3.2 A; VGS = 0 V; see Figure 13 IS = 3.2 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 120 V VDS = 100 V; RL = 100 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 30 V; f = 1 MHz; see Figure 14 ID = 2.6 A; VDS = 100 V; VGS = 10 V; see Figure 11 and 12 13.3 2.4 1.15 1.25 4.2 4.2 657 74 25 7 11 19 7 0.8 101 267 1.2 nC nC nC nC nC V pF pF pF ns ns ns ns V ns nC 250 550 263 294 647 309 m m m 10 0.6 1 100 100 A A nA 2 1.2 3 4 4.4 V V V 200 178 V V Conditions Min Typ Max Unit
Source-drain diode
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
5 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
12 VGS (V) = 10 ID (A) 8
003aab063
800 RDSon (m) 600
003aab064
5
3.6
3.8
4
4 400 3.8 4 3.6 3.4 3.2 0 0 1 2 3 4 VDS (V) 5 0 0 4 8 ID (A) 12 200 VGS (V) = 5 10
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values
12 ID (A)
003aab065
Fig 6. Drain-source on-state resistance as a function of drain current; typical values
3
03al52
a
8
2
4 Tj = 150 C 25 C
1
0 0 1 2 3 4 VGS (V) 5
0 -60
0
60
120
Tj (C)
180
Tj = 25 C and 150 C; VDS > ID x RDSon
R DSon a = ----------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
6 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2 min typ max
03aa35
3
typ
10-3
2
min
10-4
1
10-5
0 -60
0
60
120 Tj (C)
180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature
003aab066
Fig 10. Sub-threshold drain current as a function of gate-source voltage
10 VGS (V) 8
VDS ID VGS(pl)
6
4
VGS(th)
2
VGS QGS1 QGS2 QGD QG(tot)
003aaa508
0 0 4 8 12 QG (nC) 16
QGS
ID = 2.6 A; VDS = 100 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
Fig 12. Gate charge waveform definitions
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
7 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
12 IS (A) 10
003aab080
103
003aab067
Ciss C (pF)
8
6
102
4
150 C
Tj = 25 C
Coss
2 Crss 0 0.2 0.4 0.6 0.8 VSD (V) 1 10 10-1 1 10 102
VDS (V)
Tj = 25 C and 150 C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain voltage; typical values
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
8 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
7. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads; 8 terminals; body 3.3 x 3.3 x 0.85 mm
SOT873-1
X D B A
terminal 1 index area
E
A
A1 c detail X
terminal 1 index area e
1
e1 b
4
C v w
M M
CAB C
y1 C
y
L1
Eh
L2
8 5
Dh 0 1 scale DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1 A1 b c 0.2 D 3.4 3.2 Dh 2.3 2.2 E 3.4 3.2 Eh e e1 L1 L2 v 0.1 w 0.05 y 0.1 y1 0.1 2 mm
0.05 0.35 0.00 0.25
1.68 0.55 0.52 0.65 1.95 1.58 0.45 0.42 REFERENCES
OUTLINE VERSION SOT873-1
IEC ---
JEDEC ---
JEITA ---
EUROPEAN PROJECTION
ISSUE DATE 05-06-16 05-06-21
Fig 15. Package outline SOT873-1 (HVSON8)
PML260SN_1 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
9 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
8. Revision history
Table 6: Revision history Release date 20051222 Data sheet status Preliminary data sheet Change notice Doc. number Supersedes Document ID PML260SN_1
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
10 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
9. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
PML260SN_1
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 01 -- 22 December 2005
11 of 12
Philips Semiconductors
PML260SN
N-channel TrenchMOS standard level FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11
(c) Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 December 2005 Document number: PML260SN_1
Published in The Netherlands

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