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| QSX7 Transistors General purpose amplification (12V, 1.5A) QSX7 !Application Low frequency amplifier !External dimensions (Units : mm) 2.8 Each lead has same dimensions Abbreviated symbol : X07 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Limits 15 12 6 1.5 3 500 150 -55~+150 Unit V V V A A 1 mW2 C C !Equivalent circuit (6) (5) (4) (1) (2) (3) Range of storage temperature Tstg 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob 15 12 6 - - - 270 - - Typ. Max. Unit - - - - - 80 - 400 12 - - - 100 100 200 680 - - V V V nA nA mV - pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V Conditions IC/IB=500mA/25mA VCE/IC=2V/200mA VCB=10V, IE=0A, f=1MHz MHz VCE=2V, IE=-200mA, f=100MHz 0.85 !Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) 200mV At IC = 500mA / IB = 25mA 1.6 (1) (4) (5) (6) 0.4 0.16 (3) (2) 2.9 1/2 QSX7 Transistors !Packaging specifications Package Type Code Basic ordering unit (pieces) QSX7 Taping TR 3000 !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=100C Ta=-40C Ta=25C Ta=100C IC/IB=20/1 IC/IB=20 Pulsed VBE(sat) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 10 1 Ta=25C VCE=2V DC CURRENT GAIN : hFE 1 Ta=25C Ta=-40C 0.1 100 0.1 Ta=100C Ta=25C Ta=-40C IC/IB=50/1 VCE(sat) 0.01 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 VCE=2V Pulsed 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current 10 COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 1000 TRANSITION FREQUENCY : fT (MHz) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 Ta=25C VCE=2V f=100MHz SWITCHING TIME : (ns) VCE=2V Pulsed 1 100 tstg Ta=100C 0.1 Ta=25C 100 10 tdon tf tr 0.01 Ta=-40C 0.001 0 0.5 1.0 1.5 10 -0.001 VCE=2V Ta=25C Pulsed -0.01 -0.1 -1 -10 1 0.01 0.1 1 10 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time 100 Cib IE=0A f=1MHz Ta=25C Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage 2/2 |
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