View RH108AREVADICE_999108.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DICE SPECIFICATION RH108A
8
7
6
PAD FUNCTION
1. 2. 3. 4. 5. 6. 7. 8. COMP 1 - IN + IN V - (substrate) NC OUT V+ COMP 2
DIE CROSS REFERENCE (Note 1, 2)
LTC Finished Part Number RH108A Order DICE CANDIDATE Part Number Below RH108A DICE
1 2 3 4
74 x 51 mils
Backside (substrate) is an alloyed gold layer. Connect to V -.
DICE ELECTRICAL TEST LI ITS
SYMBOL PARAMETER VOS IOS IB AVOL CMRR PSRR VOUT IS Input Offset Voltage Input Offset Current Input Bias Current Large-Signal Voltage Gain Common Mode Rejection Ratio Power Supply Rejection Ratio Input Voltage Range Output Voltage Swing Supply Current VS = 15V VS = 15V, RL = 10k (Note 6) CONDITIONS
VS = 15V, VOUT = 10V RL 10k
Note 1: Differential input voltages greater than 1V will cause excessive current to flow through the input diodes unless limiting resistance is used. Note 2: For supply voltages less than 15V, the maximum input voltage is equal to the supply voltage. Note 3: Guaranteed by design, characterization or correlation to other tested parameters. Note 4: 5V VS 20V unless otherwise noted.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
W
(Elemental Evaluation)(Notes 4, 5, 7)
NOTES TA = 25C MIN MAX 0.5 0.2 2.0 80 96 96 3 13.5 13 0.6 4 1 SUB- - 55C TA 125C SUBGROUP MIN MAX GROUP 1 1 1 4 1 1 40 96 96 13.5 13 0.4 0.6 5,6 2 3 1.0 0.4 3.0 2,3 2,3 2,3 5,6 2,3 2,3 UNITS mV nA nA V/mV dB dB V V mA mA
Note 5: VS = 15V, VCM = 0V, TA = 25C unless otherwise noted. Note 6: 25C TA 125C. Note 7: Dice are probe tested at 25C to the limits shown. Final specs after assembly are sample tested during the elemental evaluation. Please refer to RH108AH data sheet . For absolute maximum ratings, typical specifications, performance curves and finished product specifications, please refer to the standard RH data sheets.
1
DICE SPECIFICATION RH108A
Rad Hard die require special handling as compared to standard IC chips. Rad Hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. Silicon nitride protects the die surface from scratches by its hard and dense properties. The passivation on Rad Hard die is silicon dioxide that is much "softer" than silicon nitride. LTC recommends that die handling be performed with extreme care so as to protect the die surface from scratches. If the need arises to move the die around from the chip tray, use a Teflon-tipped vacuum wand. This wand can be made by pushing a small diameter Teflon tubing onto the tip of a steel-tipped wand. The inside diameter of the Teflon tip should match the die size for efficient pickup. The tip of the Teflon should be cut square and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains clean from debris by inspecting under stereoscope. During die attach, care must be exercised to ensure no tweezers touch the top of the die.
Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. Dice data sheet subject to change. Please consult factory for current revision in production.
2
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 FAX: (408) 434-0507 www.linear-tech.com
rh108aa LT/LT 00499 REV A * PRINTED IN USA
(c) LINEAR TECHNOLOGY CORPORATION 1998

▲Up To Search▲

Price & Availability of RH108AREVADICE

	To Download RH108AREVADICE Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .