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| S175-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI S175-28 is a 28 V high power transistor designed for linear HF applications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45 A FULL R L E C O.125 NOM. FEATURES: * PG = 14 dB min. at 175 W/30 MHz * IMD = -32 dBc max. at 175 W(PEP) * OmnigoldTM Metalization System * Common Emitter configuration DIM C B B D G F E E H IJ K MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG JC 30 A 60 V 3.5 V 320 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.55 C/W A B C D E F G H I J K L .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.67 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO hFE GP IMD C VSWR IC = 50 mA IE = 10 mA VCE = 5.0 V TC = 25 C NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 60 33 3.5 UNITS V V V --dB dBc % --- IC = 1.0 A 10 14 VCE = 28 V PIN = 7.0 W POUT = 175 W(PEP) f = 30 MHz 65 -32 30:1 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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