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| Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package SFH 9202 0...0.1 6.2 5.8 3.4 3.0 4.2 3.8 0.15 0.13 2.1 1.7 0.5 0.3 1.27 spacing GEO06840 1 2 3 1 Anode 2 3 Emitter 6 5 4 4 Collector 5 - Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Optimaler Arbeitsabstand 1 mm bis 5 mm q IR-GaAs-Lumineszenzdiode: Sender q Si-NPN-Fototransistor: Empfanger q Tageslichtsperrfilter q Kollektor-Emitter-Strom typ. 0.2 mA q Geringe Sattigungsspannung q Sender und Empfanger galvanisch getrennt Anwendungen q Positionsmelder q Endabschalter q Drehzahluberwachung q Bewegungssensor Features q Optimal operating distance 1 mm to 5 mm q IR-GaAs-infrared emitter q Silicon NPN phototransistor detector q Daylight filter against undesired light effects q Collector-emitter current typ. 0.2 mA q Low saturation voltage q Emitter and detector electrically isolated Applications q Position reporting q End position switch q Speed monitoring q Motion transmitter Typ Type SFH 9202 SFH 9202-2/3 SFH 9202-3/4 Bestellnummer Ordering Code Q62702-P5039 Q62702-P5009 Q62702-P5010 ICE IF = 10 mA, VCE = 5 V, d = 1 mm mA 0.063 ... 0.32 0.063 ... 0.2 0.10 ... 0.32 Semiconductor Group 1 1998-08-25 feo06840 6 Cathode SFH 9202 Grenzwerte Maximum Ratings Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs diode) Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Verlustleistung Power dissipation Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage Kollektor-Emitter-Sperrspannung, (t 1 min) Collector-emitter voltage, (t 1 min) Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Reflexlichtschranke Light reflection switch Lagertemperatur Storage temperature range Umgebungstemperatur Ambient temperature range Elektrostatische Entladung Electrostatic discharge Umweltbedingungen / Environment conditions Symbol Symbol Wert Value Einheit Unit VR IF Ptot 5 50 80 V mA mW VCE VCE VEC IC Ptot 16 30 7 10 100 V mA mW Tstg TA ESD - 40 ... + 85 - 40 ... + 85 2 C KV 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Semiconductor Group 2 1998-08-25 SFH 9202 Lothinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 020 Tauch-, Schwalllotung Dip, wave soldering Reflowlotung Reflow soldering Kolbenlotung Iron soldering Peak temp. Max. time in Peak temp. Max. time in (Iron temp.) (solderbath) peak zone (package peak zone temp.) n. a. - 245 C 10 sec. 300 C < 5 sec. SFH 9202 4 Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs diode) Durchlaspannung Forward voltage IF = 50 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Warmewiderstand1) Thermal resistance1) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Kapazitat Capacitance VCE = 5 V, f = 1 MHz Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, Ev = 1000 Lx Symbol Symbol Wert Value Einheit Unit VF 1.25 ( 1.65) V IR 0.01 ( 1) A CO 25 pF RthJA 400 K/W CCE 5 pF ICEO 1 ( 50) nA IP 1 mA Semiconductor Group 3 1998-08-25 SFH 9202 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Warmewiderstand1) Thermal resistance1) Reflexlichtschranke Light reflection switch Kollektor-Emitterstrom ICE min. Collector-emitter current ICE typ. Kodak neutral white test card, 90 % Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm Kollektor-Emitter-Sattigungsspannung VCE sat Collector-emitter saturation voltage Kodak neutral white test card, 90 % Reflexion IF = 10 mA; d = 1 mm; IC = 20 A 1) 1) Symbol Symbol Wert Value 400 Einheit Unit K/W RthJA 63 200 A A 0.15 ( 0.6) V Montage auf PC-Board mit > 5 mm2 Padgroe Mounting on pcb with > 5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 Semiconductor Group 4 1998-08-25 SFH 9202 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 100 A1), RL = 1 k) Switching times F RL VCC Output C OHM02258 Bezeichnung Description Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time 1) 1) Symbol Symbol Wert Value 40 30 45 40 Einheit Unit s s s s tein ton tr taus toff tf IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) Collector current C ---------- = f ( d ) I Cmax I Permissible power dissipation for diode and transistor Ptot = f (TA ) 160 OHO02260 Switching characteristics t = f (RL) TA = 25 oC, IF = 10 mA 10 3 OHO01367 C max % 80 C 100 OHO02255 Total power dissipation Ptot mW 120 Detector t s t on t off 60 80 Emitter 10 2 40 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 4 mm 5 d 0 20 40 60 80 C 100 10 1 0 10 10 1 TA k RL 10 2 Semiconductor Group 5 1998-08-25 SFH 9202 Max. permissible forward current IF = f (TA) 120 OHO02259 Transistor capacitance (typ.) CCE = f (VCE), TA = 25 oC, f = 1 MHz 20 OHO00496 Output characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC 0.6 OHO01326 F mA 100 C CE pF 15 C mA 0.5 F = 25 mA F = 20 mA 0.4 80 F = 15 mA 60 10 0.3 40 0.2 5 F = 10 mA F = 5 mA 20 0.1 0 0 20 40 60 80 C 100 0 -2 10 10 -1 10 0 TA 10 1 V 10 2 V CE 0 0.1 10 0 10 1 V VCE Forward voltage (typ.) of the diode VF = f (T) 1.30 OHO02256 Relative spectral emission of emitter (GaAs) Irel = f () and detector (Si) Srel = f () rel S rel % 80 100 OHO00786 Collector current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection 300 C A OHO01324 VF V 1.25 1.20 F = 20 mA 10 mA 5 mA 60 200 1.15 Detector 40 1.10 20 100 VCE = 5 V 1.05 Emitter 1 -40 -20 0 20 40 60 C T 100 0 700 800 900 1000 nm 1100 0 0 4 8 12 16 mA 20 F Semiconductor Group 6 1998-08-25 |
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