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W24L257 32K x 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24L257 is a normal-speed, very low-power CMOS static RAM organized as 32768 x 8 bits that operates on a wide voltage range from 3V to 5.5V power supply. This device is manufactured using Winbond's high performance CMOS technology. FEATURES * * Low power consumption: Access time: 70 nS * 3.3V/5V power supply * Fully static operation * All inputs and outputs directly TTL compatible * * Three-state outputs Battery back-up operation capability * Data retention voltage: 2V (min.) * Packaged in 330 mil SOP, and standard type one TSOP (8 mm x 13.4 mm) PIN CONFIGURATIONS BLOCK DIAGRAM CLK GEN. A12 PRECHARGE CKT. A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CS I/O8 A14 A2 A3 A4 A5 A6 A7 A13 I/O1 : I/O8 DATA CNTRL . CLK GEN. I/O CKT. COLUMN DECODER R O W D E C O D E R CORE CELL ARRAY 512 ROWS 32 X 8 COLUMNS WE I/O7 A11 A10 A1 A0 A8 A9 CS I/O6 OE I/O5 I/O4 PIN DESCRIPTION OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 SYMBOL A0-A14 I/O1-I/O8 CS WE OE VDD VSS NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Input Write Enable Input Output Enable Input Power Supply Ground No Connection 28-pin TSOP -1- Publication Release Date: December 2000 Revision A3 W24L257 TRUTH TABLE CS H L L L OE X H L X WE X H H L MODE Not Selected Output Disable Read Write I/O1-I/O8 High Z High Z Data Out Data In VDD CURRENT ISB, ISB1 IDD IDD IDD DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Supply Voltage to VSS Potential Input/Output to VSS Potential Allowable Power Dissipation Storage Temperature Operating Temperature L/LL LE LI RATING 3.3V 5V -0.5 to +4.6 -0.5 to +7.0 -0.5 to VDD +0.5 1.0 -65 to +150 0 to 70 -20 to 85 -40 to 85 UNIT V V W C C Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. Operating Characteristics (VDD = 5V 10%; VDD = 3.3V 5%; VSS = 0V; TA (C) = 0 to 70 for L/LL, -20 to 85 for LE, -40 to 85 for LI) PARAMETER Input Low Voltage Input High Voltage Input Leakage Current Output Leakage Current SYM. VIL VIH ILI ILO TEST CONDITIONS VIN = VSS to VDD VI/O = VSS to VDD, CS = VIH (min.) or OE = VIH (min.) or WE = VIL (max.) IOL = +2.1 mA IOH = -1.0 mA CS = VIL (max.) and I/O = 0 mA, Cycle = min. Duty = 100% 3.3V MIN. MAX. -0.5 +2.0 -1 -1 +0.6 VDD +0.5 +1 +1 5V MIN. MAX. -0.5 -2 -2 +0.8 +2 +2 +2.2 VDD +0.5 UNIT V V A A Output Low Voltage Output High Voltage Operating Power Supply Current VOL VOH IDD 2.2 - 0.4 35 2.4 - 0.4 70 V V mA -2- W24L257 Operating Characteristics, continued PARAMETER Standby Power Supply Current SYM. ISB ISB1 TEST CONDITIONS - 3.3V MIN. MAX. 1 15 30 MIN. - 5V MAX. 3 15 30 UNIT mA A CS = VIH (min.) or Cycle = min. Duty = 100% CS VDD -0.2V LL/LE/LI L Note: Typical parameter is measured under ambient temperature TA = 25 C and VDD = 3.3V/5V CAPACITANCE (VDD = 5V 10%; VDD = 3V 5%, TA = 25 C, f = 1 MHz) PARAMETER Input Capacitance Input/Output Capacitance SYM. CIN CI/O CONDITIONS VIN = 0V VOUT = 0V MAX. 6 8 UNIT pF pF Note: These parameters are sampled but not 100% tested. AC Characteristics AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC Test Loads and Waveform 1 TTL OUTPUT 100 pF Including Jig and Scope OUTPUT 5 pF Including Jig and Scope (For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW ) 3.0 V 0V 5 nS 90% 10% 90% 10% CONDITIONS 0V to 3.0V 5 nS 1.5V See the drawing below 1 TTL 5 nS -3- Publication Release Date: December 2000 Revision A3 W24L257 AC Characteristics, continued Read Cycle (VDD = 5V 10%; VDD = 3V 5%; VSS = 0V; TA (C) = 0 to 70 for L/LL, -20 to 85 for LE, -40 to 85 for LI) PARAMETER SYMBOL MIN. 3.3V/5V MAX. 70 70 35 30 30 - UNIT Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to Output in High Z Output Disable to Output in High Z Output Hold from Address Change These parameters are sampled but not 100% tested TRC TAA TACS TAOE TCLZ* TOLZ* TCHZ* TOHZ* TOH 70 10 5 10 nS nS nS nS nS nS nS nS nS Write Cycle PARAMETER SYMBOL MIN. Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold from End of Write Write to Output in High Z Output Disable to Output in High Z Output Active from End of Write These parameters are sampled but not 100% tested TWC TCW TAW TAS TWP TWR TDW TDH TWHZ* TOHZ* TOW 70 55 55 0 40 35 0 5 25 25 3.3V/5V MAX. nS nS nS nS nS nS nS nS nS nS nS UNIT CS , WE -4- W24L257 TIMING WAVEFORMS Read Cycle 1 (Address Controlled) TRC Address TOH DOUT T AA TOH Read Cycle 2 (Chip Select Controlled) CS1 TACS TCLZ DOUT TCHZ Read Cycle 3 (Output Enable Controlled) TRC Address TAA OE TAOE TOLZ CS TOH TACS DOUT TCLZ T CHZ TOHZ -5- Publication Release Date: December 2000 Revision A3 W24L257 Timing Waveforms, continued Write Cycle 1 TWC Address TWR OE TCW CS TAW WE TAS TOHZ DOUT TDW DIN TDH (1, 4) TWP Write Cycle 2 (OE = VIL Fixed) TWC Address TCW CS TWR TAW WE TAS TWP TWHZ (1, 4) TOH (2) TOW (3) D OUT TDW DIN TDH Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from DOUT are the same as the data written to DIN during the write cycle. 3. DOUT provides the read data for the next address. 4. Transition is measured 500 mV from steady state with CL = 5 pF. This parameter is guaranteed but not 100% tested. -6- W24L257 DATA RETENTION CHARACTERISTICS (TA (C) = 0 to 70 for L/LL, -20 to 85 for LE, -40 to 85 for LI) PARAMETER VDD for Data Retention Data Retention Current SYM. VDR IDDDR TEST CONDITIONS CS VDD -0.2V CS VDD -0.2V, VDD = 3V LL/LE/LI L MIN. 2.0 0 TRC* TYP. - MAX. 15 30 - UNIT V A A nS nS Chip Deselect to Data Retention Time Operation Recovery Time * Read Cycle Time TCDR TR See data retention waveform DATA RETENTION WAVEFORM VDD 0.9 VDD TCDR > V DR = 2V 0.9 VDD TR CS CS > VDD - 0.2V = -7- Publication Release Date: December 2000 Revision A3 W24L257 ORDERING INFORMATION PART NO. ACCESS TIME (nS) 70 70 70 70 70 70 70 70 OPERATING VOLTAGE OPERATING TEMPERATURE STANDBY CURRENT MAX. (A) 15 15 15 15 15 15 15 15 PACKAGE (V) 3.3V/5V 3.3V/5V 3.3V/5V 3.3V/5V 3.3V/5V 3.3V/5V 3.3V/5V 3.3V/5V (C) 0 to 70 0 to 70 -20 to 85 -40 to 85 0 to 70 0 to 70 -20 to 85 -40 to 85 W24L257S70L W24L257S70LL W24L257S70LE W24L257S70LI W24L257Q70L W24L257Q70LL W24L257Q70LE W24L257Q70LI Notes: 450 mil SOP 450 mil SOP 450 mil SOP 450 mil SOP Small TSOP Small TSOP Small TSOP Small TSOP 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. -8- W24L257 BONDING PAD DIAGRAM 6 A4 7 A3 5 A5 4 A6 3 2 1 30 29 28 27 26 25 24 A7 A12 A14 VDD VDD WEB A13 A8 A9 A11 AC5394 23 OEB Y X 8 A2 9 A1 10 11 12 13 14 15 16 17 18 19 20 21 22 A10 A0 I/O0 I/O1 I/O2 VSS VSS I/O3 I/O4 I/O5 I/O6 I/O7 CSB PAD NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 X -232.25 -351.70 -471.15 -590.60 -710.05 -829.50 -992.79 -992.79 -857.86 -738.41 -594.84 -451.06 -310.67 -171.78 24.45 151.80 298.07 443.28 588.20 732.84 871.11 992.75 992.75 810.09 690.64 571.19 451.74 332.29 120.25 -93.23 Y 1445.22 1445.22 1445.22 1445.22 1445.22 1445.22 1362.24 -1306.11 -1452.79 -1452.79 -1414.13 -1414.13 -1414.13 -1405.28 -1405.28 -1414.13 -1414.13 -1414.13 -1414.13 -1414.13 -1452.79 -1312.15 1373.67 1445.22 1445.22 1445.22 1445.22 1445.22 1444.65 1444.65 Note: For bare chip form (C.O.B.) applications, the substrate must be connected to VDD or left floating in the PCB layout. -9- Publication Release Date: December 2000 Revision A3 W24L257 PACKAGE DIMENSIONS 28-pin SO Wide Body Symbol Dimension in Inches Dimension in mm Min. Nom. Max. 0.112 0.004 0.093 0.014 0.008 0.098 0.016 0.010 0.713 0.326 0.044 0.453 0.028 0.059 0.331 0.050 0.465 0.036 0.067 0.103 0.020 0.014 0.733 0.336 0.056 0.477 0.044 0.075 0.047 0.004 0 10 Min. Nom. Max. 2.85 0.10 2.36 0.36 0.20 2.49 0.41 0.25 18.11 8.28 1.12 11.51 0.71 1.50 8.41 1.27 11.81 0.91 1.70 2.62 0.51 0.36 18.62 8.53 1.42 12.12 1.12 1.91 1.19 0.10 0 10 28 15 e1 E HE L Detail F 1 b 14 A A1 A2 b c D E e HE L LE S y Notes: D e1 c A2 A S e y A1 LE See Detail F Seating Plane 1. Dimension D Max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion/intrusion. 3. Dimension D & E include mold mismatch . and determined at the mold parting line. 4. Controlling dimension: Inches. 5. General appearance spec should be based on final visual inspection spec. 28-pin Standard Type One TSOP HD Symbol Dimension In Inches Min. Nom. Max. 0.047 0.002 0.035 0.007 0.004 0.461 0.311 0.520 0.040 0.008 0.006 0.465 0.315 0.528 0.022 0.020 0.024 0.010 0.000 0 3 0.004 5 0.028 0.006 0.041 0.011 0.008 0.469 0.319 0.536 Dimension In mm Min. Nom. Max. 1.20 0.05 0.95 0.17 0.10 11.70 7.90 13.20 1.00 0.20 0.15 11.80 8.00 13.40 0.55 0.50 0.60 0.25 0.00 0 3 0.10 5 0.70 0.15 1.05 0.27 0.21 11.90 8.10 13.60 D c 1 e E b A2 A A A1 A2 b c D E HD e L L1 Y L L1 A1 Controlling dimension: Millimeters Y - 10 - W24L257 VERSION HISTORY VERSION A1 A2 DATE May 2000 Nov. 2000 PAGE 1, 2, 3, 4, 7 1, 9 2, 3, 7, 8 A3 Dec. 2000 2, 4, 5 Initial Issued Add in 5V specification Modify package as 330 mil SOP and standard type one TSOP (8 mm x 13.4 mm) Add in LE, LI specification Modify the 3.3V 10%, to 3.3V 5%, DESCRIPTION Headquarters Winbond Electronics (H.K.) Ltd. Unit 9-15, 22F, Millennium City, No. 4, Creation Rd. III, No. 378 Kwun Tong Rd; Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change withou t notice. - 11 - Publication Release Date: December 2000 Revision A3 |
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