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Composite Transistors
XN01457
Silicon PNP epitaxial planar transistor
For general amplification Features
* Two elements incorporated into one package (Emitter-coupled transistors) * Reduction of the mounting area and assembly cost by one half
3 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5
Unit: mm
0.16+0.10 -0.06
1.50+0.25 -0.05
2.8+0.2 -0.3
2 0.30+0.10 -0.05 10
1
Basic Part Number of Element
* 2SB1693 x 2 elements
1.1+0.2 -0.1
(0.65)
Parameter Rating of element Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Overall Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating -40 -20 -15 - 0.5 -1 300 150 -55 to +150
Unit V
1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2)
0 to 0.1
Absolute Maximum Ratings Ta = 25C
4: Emitter 5: Base (Tr1) Mini5-G1 Package
V A A mW C C
Tr2 Tr1
Marking Symbol: 4Y Internal Connection
3 4 5
Electrical Characteristics Ta = 25C 3C
Parameter Collector to base voltage Collector to emittter voltage Emitter to base voltage Forward current transfer ratio *1 hFE Ratio *1, 2 Collector to emitter saturation voltage *1 Symbol VCBO VCEO VEBO hFE1 hFE2 hFE(Small/Large) VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -2 V, IC = -100 mA VCE = -2 V, IC = -500 mA VCE = -2 V, IC = -100 mA IC = -100 mA, IB = -10 mA IC = - 0.5 A, IB = -25 mA Gain bandwidth product Collector output capacitance VCB = -5 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz
2 Min -40 -20 -15 160 100 0.5 0.99 -60 -210 170 16 Typ
1.1+0.3 -0.1
1 Max Unit V
V 560 -300 -500 MHz pF mV
Note) *1: Pulse measurement *2: Ratio between one and another device
0.40.2
5
Publication date: July 2002
SJJ00260AED
1
XN01457
PT Ta
350 300 250 200 150 100 50 0 -400 Ta = 25C -350
IC VCE
IB = -1.0 mA - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA - 0.1 mA -2 -4 -6 -8 -10 -12 -300 VCE = -2 V -250
IC I B
Total power dissipation PT (mW)
Collector current IC (mA)
-250 -200 -150 -100 -50 0
Collector current IC (mA)
-300
-200
-150
-100
-50
0
20
40
60
80 100 120 140 160
0
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IC VBE
-120 - 0.1
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
IC / IB = 10 450 400
hFE IC
Ta = 75C VCE = -2 V
VCE = -2 V -100
25C
Forward current transfer ratio hFE
Collector current IC (mA)
350 300 250 200 150 100 50
25C
-80 Ta = 75C -60 -25C -40
Ta = 75C
-25C
-25C
- 0.01
25C
-20
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2 -1.4
- 0.001 -1
-10
-100
0 -1
-10
-100
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
100
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
10
1
0
-5 -10 -15 -20 -25 -30 -35 -40
Collector to base voltage VCB (V)
2
SJJ00260AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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