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Silicon Switching Diode
Applications Features
1N914 or 1N914-1
DO-35 Glass Package
Used in general purpose applications, where performance and switching speed are important.
DO-35 Glass Package
Six sigma quality Metallurgically bonded BKC's Sigma BondTM plating for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500/116 Available up to JANTXV levels "S" level screening available to SCDs
Maximum Ratings Peak Inverse Voltage Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 sec.) Power Dissipation @ TL=50 C, L = 3/8" from body Storage & Operating Temperature Range Electrical Characteristics @ 25 oC* Breakdown Voltage @ Ir = 0.1 mA Reverse Leakage Current @ VR = 20 V Reverse Leakage (Vr =20 V, 150 oC) Reverse Leakage Current @ VR = 75 V Capacitance @ VR = 0 V, f = 1mHz Reverse Recovery Time (note 1) Forward Recovery Time (note 2) Symbol PIV IR IR IR CT trr Vfr
o
L a dDa . e i 0. 1 - . 2 " 0 80 0 2 0. 5 - . 5 m m 4 80 5 8
1.0" 25.4 mm (Min.)
Length
0.120-.200" 3.05-5.08- m
Dia.
0.06-0.09"
m
15 - . 8m m . 322
Symbol PIV IAvg IFdc Ipeak Ptot TSt & Op
Value 100 (Min.) 75 300 0.5 250 -65 to +200
Unit Volts mAmps mAmps Amp mWatts
o
C
Absolute Limits 100 (Min) 0.025 (Max) 50 (Max) 5.0 (Max) 4.0 (Max) 4.0 (Max) 2.5 (Max)
Unit Volts A A A pF nSecs Volts
Note 1: IF = 10 mA, RL = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA Note 2: IF = 50 mA dc *UNLESS OTHERWISE SPECIFIED
6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135

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