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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV25 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES * internally matched input for wideband operation and high power gain; * multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; * gold-metallization ensures excellent reliability. The transistor has a 12in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 28 f MHz 108 PL W 175 PS W < 17,5 Gp dB > 10,0 PINNING PIN 1
handbook, halfpage
BLV25
% > 65
DESCRIPTION emitter emitter base collector emitter emitter
1
2
2 3 4 5 6
3
4
5
6
MSB006
Fig.1 Simplified outline, SOT119A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 25 C R.F. power dissipation (f > 1 MHz); Tmb = 25 C R.F. power dissipation (f > 1 MHz); Th = 70 C Storage temperature Operating junction temperature IC; IC(AV) ICM Ptot (d.c.) Ptot (r.f.) Ptot (r.f.) Tstg Tj max. max. max. max. max. -65 max. to VCESM VCEO VEBO max. max. max.
BLV25
65 V 33 V 4V 17, 5 A 35 A 220 W 270 W 146 W +150 C 200 C
102 handbook, halfpage
MGP294
handbook, halfpage
300
MGP295
Ptot IC (A) Tmb = 25 C
(1)
(W) 200
10 Th = 70 C
100
1
1
10
VCE (V)
102
0 0 50 Th (C) 100
I Continuous d.c. operation (1) Second breakdown limit. II Continuous r.f. operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE (dissipation = 150 W; Tmb = 72 C, i.e. Th = 42 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h max max max 0,85 K/W 0,60 K/W 0,2 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA open base; IC = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 33 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) IC = 8,5 A; VCE = 25 V Collector-emitter saturation voltage(1) IC = 20 A; IB = 4,0 A Transition frequency at f = 100 -IE = 8,5 A; VCB = 25 V -IE = 20 A; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 25 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01. Cre Ccf typ. typ. Cc typ. MHz(2) fT fT typ. typ. VCEsat typ. hFE typ. 50 15 to 100 ESBO ESBR > > ICES < V(BR)EBO > V(BR)CES V(BR)CEO > >
BLV25
65 V 33 V 4V 25 mA 20 mJ 20 mJ
1,6 V 600 MHz 600 MHz 275 pF 155 pF 3 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV25
handbook, halfpage
80
MGP296
handbook, halfpage
800
MGP297
hFE typ
fT (MHz)
typ
40
400
0 0 10 IC (A) 20
0 0 10 20 -IE (A) 30
Fig.4 VCE = 25 V; Tj = 25 C.
Fig.5 VCB = 25 V; f = 100 MHz; Tj = 25 C.
MGP298
handbook, halfpage
600
Cc (pF)
typ 300
0 0 10 20 VCB (V) 30
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) Th = 25 C f MHz 108 VCE V 28 PL W 175 < typ. PS W 17,5 13,9 > typ. Gp dB 10,0 11,0 < typ. IC A 9,6 8,9
BLV25
% > typ. 65 70
handbook, full pagewidth
C12 C4 C5 L2 T.U.T. L5 C9 C13 C15 C16 L6 L7 50
50 C1 C2 C3
L1
L3
C6
C7 L8 +VCC
R1
L4
C8
C10
C11
C14
L9
MGP299
Fig.7 Class-B test circuit at f = 108 MHz.
List of components C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC(1)); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471) C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109) C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174) C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478) C14 = 6,8 F/63 V electrolytic capacitor L1 = Cu strip (10 mm x 4 mm x 0,5 mm) L2 = strip on printed-circuit board L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2 x 6 mm L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 x 5 mm L6 = Cu strip (27 mm x 9 mm x 0,5 mm) L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 x 10 mm L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in. R1 = 10 carbon resistor Note 1. ATC means American Technical Ceramics. August 1986 6
Philips Semiconductors
Product specification
VHF power transistor
BLV25
270
80
L4
C8 C10 R1 L5
C11
+VCC L7 strip
C13 strip
C15
L8, L9
strip stop strip C12 C16 stop
C2
L3 L1
C4, C5 L2 L6
C6, C7 C1 C3 7 mm C9
MGP300
The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV25
handbook, halfpage
200
MGP301
MGP302
handbook, halfpage
250
PL (W)
PL (W)
Th = 25 C 50 C 70 C
200
150
100
25 C 50 C 70 C 100
50
0 1 10 VSWR
102
0 0 10 20 PS (W) 30
------ f > 1 MHz (continuous); - - - - short time operation during mismatch (f > 1 MHz).
Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 C; class-B operation.
Fig.9 R.F. SOAR.
Fig.10 Load power as a function of source power.
MGP303
handbook, halfpage
16
80 Gp (%) 60
handbook, halfpage
1
MGP304
Gp (dB) 12
ri, xi () 0.5 ri
xi 8 40 0
4
20
-0.5
0 0 100 200 PL (W)
0 300
-1 20 70 f (MHz) 120
Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 C; class-B operation.
Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
Fig.11 Power gain and efficiency as a function of source power.
Fig.12 Input impedance (series components).
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV25
handbook, halfpage
3
MGP305
MGP306
handbook, halfpage
20
RL, XL () 2 RL Gp (dB)
10
1 XL
0 20
70
f (MHz)
120
0 20
70
f (MHz)
120
Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
Typical values; VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
Fig.13 Load impedance (series components).
Fig.14 Power gain as a function of frequency.
OPERATING NOTE for Figs 12, 13 and 14: Below 50 MHz a base-emitter resistor of 4,7 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV25
SOT119A
A F q
C
U1 H1 b2
B w2 M C c
2
4
6
H
U2
p
D1 w1 M A B
U3
D
A
1
b1
3
b e
5
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 b 5.59 5.33 b1 5.34 5.08 b2 4.07 3.81 c D D1 e F H H1 p Q q U1 U2 U3 w1 w2 1.02 0.04 w3 0.26 0.01
0.18 12.86 12.83 6.48 0.07 12.59 12.57
2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97
4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06
0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475
OUTLINE VERSION SOT119A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV25
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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