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 SI3420DV
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
ID (A)
0.5
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
3.7 @ VGS = 10 V
D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: SI3420DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0 1 mH 0.1 TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 0.5 0.4 1 1 0.05 1 2.1 1.34
Steady State
Unit
V
0.37 0.29 A
mJ A 1.14 0.73 W _C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71097 S-31725--Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 35
Maximum
60 110 42
Unit
_C/W C/W
1
SI3420DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.35 A VDS = 15 V, ID = 1 A IS = 1 A, VGS = 0 V 9 1.2 1 3.7 2.0 "100 1 25 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 7 8 10 30 140 VDS = 100 V, VGS = 10 V, ID = 0.5 A 2.2 0.65 0.95 2.5 12 13 15 50 225 ns W 3.5 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0 VGS = 10 thru 8 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 7V 1.0 1.5 125_C 1.0 2.0 TC = - 55_C 25_C
Transfer Characteristics
6V 0.5 4V 0.0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 5V
0.5
0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71097 S-31725--Rev. B, 18-Aug-03
SI3420DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
7 r DS(on) - On-Resistance ( W ) 6 C - Capacitance (pF) 5 4 VGS = 10 V 3 2 1 0 0.0 120 100 Ciss 80 60 40 Coss 20 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 Crss
Capacitance
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
20 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 0.5 A 16 2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.35 A 2.0
12
r DS(on) - On-Resistance (W) (Normalized) 2 3 4
1.5
8
1.0
4
0.5
0 0 1 Qg - Total Gate Charge (nC)
0.0 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10 10
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
1
r DS(on) - On-Resistance ( W )
TJ = 150_C
8 ID = 0.35 A 6
0.1 TJ = 25_C 0.01
4
2
0.001 0.0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71097 S-31725--Rev. B, 18-Aug-03
www.vishay.com
3
SI3420DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.9 0.6 V GS(th) Variance (V) ID = 250 mA 0.3 Power (W) 12 TA = 25_C 8 0.0 - 0.3 - 0.6 - 0.9 - 50 4 20
Single Pulse Power
16
- 25
0
25
50
75
100
125
150
0 10 -3
10 -2
10 -1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71097 S-31725--Rev. B, 18-Aug-03


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