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| UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. 1 FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature * : Mounted on cermic substrate( 250mm2 x 0.8t ) SYMBOL VCBO VCEO VEBO Ic IB PC PC* Tj TSTG VALUE -120 -120 -5 -800 -160 500 1000 150 -55 ~ +150 UNIT V V V mA mA mW mW C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Emitter to Base breakdown voltage Collector cut-off current Emitter cut-off current DC Current Gain Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance SYMBOL V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob TEST CONDITIONS Ic= -10mA, IB=0 IE= -1mA, IC=0 VCB= -120V, IE=0 VEB= -5V, IC=0 VCE= -5V, IC= -100mA Ic= -500mA, IB= -50mA VCE= -5V, IC= -100mA VCE= -5V, Ic= -100mA VCB= -10V, IE=0, f=1MHz MIN -120 -5 TYP MAX UNIT V V A A V V MHz pF 80 -0.1 -0.1 240 -1.0 -1.0 120 30 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-024,A UTC 2SA1201 RANK RANGE PNP EPITAXIAL SILICON TRANSISTOR O 80 - 160 Y 120 - 240 CLASSIFICATION OF hFE TYPICAL PERFORMANCE CHARACTERISTICS IC-VCE -800 -10 -7 Common Emitter Ta=25 -5 I(tot) -4mA -3 -400 -2 -200 IB=-1mA 1000 500 DC Current Gain hFE 300 Ta=100 hFE-Ic Common Emitter VCE= -5V I(tot) mA Collector Current Ic(mA) -600 100 25 50 30 -25 0 0 -0.5 Collector-emitter Saturation Voltage VCE(sat)(V) -0.3 -8 -12 -4 Collector Emitter Voltage VCE (V) hFE-Ic -16 10 -3 -0.8 -10 -100 -30 -300 Collector Current IC(A) IC-VBE -1000 Ta=100 -0.1 Collector Current Ic(A) Common Emitter Ic/IB=10 I(tot) mA Common Emitter VCE= -5V I(tot) mA Ta=100 25 -25 -0.6 -0.4 -0.05 -0.03 25 -25 -0.2 -0.01 -3 -10 -100 -30 -300 Collector Current IC(A) Safe Operation Area -1000 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Base Emitter Voltage VBE (V) Pc-Ta -3000 -1000 -500 -300 Collector Current Ic (mA) -100 Collector Power Dissipatoin Pc,(W) Ic max.(pulsed)* Ic max.(continuous)* 10ms* 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 80 100 120 140 160 40 60 Ambient Temperature Ta() 2 1 1. Mounted on Ceramic Substrate (250mm2*0.8t) I(tot) 2. No heat sink mA 1ms* DC OPERATION -50 Ta=25 -30 -10 100ms* *Single nonrepetitive pulse Ta=25 Curves must be derated -5 linearly with increase in temperature -3 Test without a substrate VCEO MAX -1 -0.3 -1 -3 -10 -30 -100 -300 Collector Emitter Voltage VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-024,A UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-024,A |
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