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| Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm q q q q 16.20.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -150 -150 -5 -15 -9 100 3 150 -55 to +150 Unit V V V A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = -150V, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20mA VCE = -5V, IC = -1A VCE = -5V, IC = -7A VCE = -5V, IC = -7A IC = -7A, IB = - 0.7A VCE = -5V, IC = - 0.5A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz 15 270 20 60 20 -1.8 -2.0 V V MHz pF 200 min typ max -50 -50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC -- Ta 120 2SB1361 IC -- VCE -12 TC=25C -10 IB=-300mA -200mA -8 -150mA -6 -100mA -80mA -60mA -4 -40mA -20mA -10mA 0 0 0 -2 -4 -6 -8 -10 -12 0 -1 -2 -3 -10 -12 VCE=-5V IC -- VBE Collector power dissipation PC (W) 100 Collector current IC (A) Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) 25C -8 TC=-25C 100C 80 60 (1) -6 40 -4 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 -2 -2 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 TC=100C 25C -25C 1000 hFE -- IC VCE=-5V 1000 fT -- IC VCE=-5V f=1MHz TC=25C Forward current transfer ratio hFE 300 Transition frequency fT (MHz) -1 -3 -10 -30 -100 TC=100C 25C 300 100 -25C 30 100 30 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 10 10 3 3 -1 -3 -10 -30 -100 1 - 0.1 - 0.3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) -100 IE=0 f=1MHz TC=25C -30 Non repetitive pulse TC=25C ICP t=10ms -10 -3 -1 IC 100ms Collector output capacitance Cob (pF) 3000 1000 300 Collector current IC (A) DC 100 - 0.3 - 0.1 - 0.03 30 10 -1 -3 -10 -30 -100 - 0.01 -1 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1361 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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