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| Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.60.2 s Features q q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C) Ratings -130 -80 -7 -15 -7 40 2 150 -55 to +150 Unit V V V A A W C C 15.00.3 3.00.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf IC = -3A, IB1 = - 0.3A, IB2 = 0.3A Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -3A IC = -5A, IB = - 0.25A IC = -5A, IB = - 0.25A VCE = -10V, IC = - 0.5A, f = 10MHz 30 0.5 1.5 0.1 -80 45 90 260 - 0.5 -1.5 V V MHz s s s min typ max -10 -50 Unit A A V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 50 -10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=-120mA -110mA -100mA -90mA -80mA -70mA -60mA -40mA -4 -30mA -20mA -2 -10mA 2SB1607 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=20 -30 -10 -3 -1 VCE(sat) -- IC Collector power dissipation PC (W) 30 Collector current IC (A) 40 -8 -6 (1) 20 - 0.3 - 0.1 - 0.03 TC=100C -25C 25C 10 (3) (4) 0 0 20 40 60 (2) 0 80 100 120 140 160 0 -2 -4 -6 -8 -10 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 10000 IC/IB=20 hFE -- IC 10000 VCE=-2V 3000 1000 300 100 30 10 3 fT -- IC VCE=-10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -10 -3 -1 TC=-25C 100C 25C 1000 300 100 30 10 3 1 - 0.1 - 0.3 TC=100C -25C 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -10 -30 -100 -30 3000 -1 -3 -10 -1 -3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-50V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP IC 10ms t=0.5ms 1ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) 10 3 1 Collector current IC (A) -10 -3 -1 tstg 0.3 0.1 0.03 0.01 ton tf DC - 0.3 - 0.1 - 0.03 - 0.01 -1 -1 -3 -10 -30 -100 0 -2 -4 -6 -8 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB1607 Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
Price & Availability of 2SB1607
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