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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 SEPTEMBER 95 7 BSS64 C B E COMPLIMENTARY TYPE PARTMARKING DETAIL - BSS63 BSS64 - U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PTOT t j:tstg VALUE 120 80 5 100 330 -55 to +150 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE MIN. 120 80 5 100 50 200 150 200 1.2 Typ. 60 80 55 Typ. 100 MHz MAX. UNIT V V V nA CONDITIONS. IC=100A IC=4mA IE=100A VCB=90V VCB=90V,Tj=150oC VEB=5V IC=4mA, IB=400A IC=50mA, IB=15mA IC=4mA, IB=400A IC=1mA, VCE=-1V IC=10mA, VCE=1V IC=20mA, VCE=1V VCE=10V, IC=4mA f=35 MHz VCB=10V, f=1MHz A nA mV mV mV 20 Transition Frequency fT 60 Typ. 3 Output Capacitance Cobo 5 pF * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PAGE NUMBER |
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