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October 2004 CT RODU NT E TE P CEME L OBSO DED REPLA enter at EN rt C /tsc COMM S upp o NO RE r Technical .intersil.com ww t ou contac TERSIL or w 8-IN 1-88 (R) HA-5112/883 Dual, Low Noise, High Performance Uncompensated Operational Amplifier Description Low Noise and high performance are key words describing the dual, uncompensated HA-5112/883. This general purpose amplifier offers an array of dynamic specifications including 12V/s slew rate (min), and 54MHz gain-bandwidth-product for AVCL 10. Complementing these outstanding parameters is a very low noise specification of 6nV/Hz at 1kHz (max). Fabricated using the Intersil standard high frequency D.I. process, these operational amplifiers also offer excellent input specifications such as 2.5mV (max) offset voltage and 75nA (max) offset current. Complementing these specifications are 100dB (min) open loop gain and 55dB channel separation (min). The HA-5112/883 also consumes a very modest amount of supply power (180mW/package). This impressive combination of features make this amplifier ideally suited for designs ranging from audio amplifiers and active filters to the most demanding signal conditioning and instrumentation circuits. Features * This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Input Noise Voltage Density at 1kHz. . . 6nV/Hz(Max) 4.3nV/Hz(Typ) * High Slew Rate . . . . . . . . . . . . . . . . . . . . . . .12V/s (Min) 20V/s (Typ) * Wide Gain Bandwidth Product (AVCL 10) . . . . 54MHz * Low Offset Voltage Drift . . . . . . . . . . . . . . 3V/oC (Typ) * High Open Loop Gain (Full Temp.). . . . . 100kV/V (Min) 250kV/V (Typ) * High CMRR/PSRR (Full Temp.). . . . . . . . . . . 86dB (Min) 100dB (Typ) * Low Offset Voltage Drift . . . . . . . . . . . . . . 3V/oC (Typ) * No Crossover Distortion * Standard Dual Pinout Part Number Information PART NUMBER HA2-5112/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 8 Pin Can Applications * High Quality Audio Preamplifiers * High Q Active Filters * Low Noise Function Generators * Low Distortion Oscillators * Low Noise Comparators Pinout HA-5112/883 (METAL CAN) TOP VIEW V+ 8 OUT1 1 1 -IN1 2 -+ 2 +6 -IN2 7 OUT2 +IN1 3 4 V- 5 +IN2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved 1 Spec Number 511032-883 FN3711.2 HA-5112/883 Absolute Maximum Ratings Voltage between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . 40V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite (One Amplifier Shorted to Ground) Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC Thermal Information Thermal Resistance JA JC Metal Can Package . . . . . . . . . . . . . . . . . 160oC/W 70oC/W Package Power Dissipation Limit at +75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. JA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Operating Conditions Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 5V to 15V VINCM 1/2 (V+ - V-) RL 2k TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Input Bias Current +IB VCM = 0V, +RS = 10k, -RS = 100 VCM = 0V, +RS = 100, -RS = 10k VCM = 0V, +RS = 10k, -RS = 10k V+ = +3V, V- = -27V 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -CMR V+ = +27V, V- = -3V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = +5V, V+ = +10V, V- = -20V, VOUT = -5V VCM = -5V, V+ = +20V, V- = -10V, VOUT = +5V 4 5, 6 4 5, 6 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN -2.0 -2.5 -200 -325 -200 o PARAMETERS Input Offset Voltage SYMBOL VIO CONDITIONS VCM = 0V MAX 2.0 2.5 200 325 200 325 75 125 -12 -12 - UNITS mV mV nA nA nA nA nA nA V V V V kV/V kV/V kV/V kV/V dB dB dB dB +25 C +125oC, +25 o o -55oC -IB oC +125 C, -55 C +25oC +125oC, -55oC -325 -75 -125 +12 +12 100 Input Offset Current IIO Common Mode Range +CMR +25oC +125oC, -55oC +25 C +125oC, -55oC o +25 C +125 C, -55 C +25 +125o oC o o o o 100 100 100 86 86 86 86 -AVOL C, -55 C o Common Mode Rejection Ratio +CMRR +25 C +125 oC, -55oC -CMRR +25oC +125 oC, -55oC Spec Number 2 511032-883 HA-5112/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 -VOUT1 RL = 2k 1 2, 3 +VOUT2 RL = 10k 1 2, 3 -VOUT2 RL = 10k 1 2, 3 Output Current +IOUT VOUT = -5V 1 2, 3 -IOUT VOUT = +5V 1 2, 3 Quiescent Power Supply Current +ICC VOUT = 0V, IOUT = 0mA 1 2, 3 -ICC VOUT = 0V, IOUT = 0mA 1 2, 3 Power Supply Rejection Ratio +PSRR VSUP = 10V, V+ = +10V, V- = -15V V+ = +20V, V- = -15V VSUP = 10V, V+ = +15V, V- = -10V V+ = +15V, V- = -20V 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 10 10 12 12 10 10 -5 -6 86 86 86 86 MAX -10 -10 -12 -12 -10 -10 5 6 UNITS V V V V V V V V mA mA mA mA mA mA mA mA dB dB dB dB PARAMETERS Output Voltage Swing SYMBOL +VOUT1 CONDITIONS RL = 2k -PSRR TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Parameters in Table 3 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified. LIMITS PARAMETERS Differential Input Resistance Input Noise Voltage Input Noise Current Gain Bandwidth Product SYMBOL RIN EN IN GBWP CONDITIONS VCM = 0V RS = 20, fO = 1000Hz RS = 2M, fO = 1000Hz VO = 200mV, fO = 50kHz VO = 200mV, fO = 1MHz NOTES 1 1 1 1 1 TEMPERATURE +25 C +25oC +25oC +25oC +25oC o MIN 250 40 54 MAX 6 3 - UNITS k nV/Hz pA/Hz MHz MHz Spec Number 3 511032-883 HA-5112/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AVCL = 10V/V, Unless Otherwise Specified. LIMITS PARAMETERS Slew Rate SYMBOL +SR -SR Full Power Bandwidth Minimum Closed Loop Stable Gain Rise and Fall Time FPBW CLSG tR tF Overshoot +OS -OS Output Resistance Quiescent Power Consumption Channel Separation ROUT PC CS CONDITIONS VOUT = -5V to +5V VOUT = +5V to -5V VPEAK = 10V RL = 2k, CL = 50pF VOUT = 0V to +200mV VOUT = 0V to -200mV VOUT = 0V to +200mV VOUT = OV to -200mV Open Loop VOUT = 0V, IOUT = 0mA RS = 1k, AVCL = 100V/V, VIN = 100mVPEAK at 10kHz, Referred to Input NOTES 1 1 1, 2 1 1, 4 1, 4 1 1 1 1, 3 1 o TEMPERATURE +25oC +25oC +25oC -55oC to +125oC MIN 12 12 191 10 - MAX 100 100 40 40 232 180 - UNITS V/s V/s kHz V/V ns ns % % mW dB +25oC +25 C +25 C +25oC +25 C -55 C to +125 C +25oC o o o o 55 NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). 4. Measured between 10% and 90% points. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 1), 2, 3, 4, 5, 6 1, 2, 3, 4, 5, 6 1 Spec Number 4 511032-883 HA-5112/883 Die Characteristics DIE DIMENSIONS: 98.4 x 67.3 x 19 mils 1 mils 2500 x 1710 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 1.43 x 105A/cm2 at 10mA SUBSTRATE POTENTIAL (Powered Up): Unbiased TRANSISTOR COUNT: 93 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-5112/883 V+IN1 -IN1 OUT1 +IN2 -IN2 OUT2 V+ Spec Number 5 511032-883 |
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