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| PN4122 Discrete POWER & Signal Technologies PN4122 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN4122 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN4122 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO V(BR)CES IB ICES Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Base Cutoff Current Collector Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 I C = 10 A VCE = 30 V VCE = 30 V VCE = 30 V, TA = 65 C 40 40 5.0 40 25 25 25 V V V nA nA nA A ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 100 A VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA IC = 1.0 mA, I B = 0.1 mA IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA IC = 1.0 mA, I B = 0.1 mA IC = 10 mA, I B = 1.0 mA IC = 50 mA, I B = 5.0 mA 100 150 150 30 300 0.13 0.14 0.30 0.75 0.90 1.10 V V V V V V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 0.70 SMALL SIGNAL CHARACTERISTICS Cob Cib hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz IC = 10 mA, VCE = 20 V, f = 100 MHz IC = 1.0 mA, VCE = 10 V, f = 1 kHz IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 8.0 VCE = 20 V, IC = 10 mA f = 80 MHz VCE = 5.0 V, IC = 1.0 mA, RS = 100 , f = 100 MHz, Bw = 15 MHz VCE = 5.0 V, IC = 100 , RS = 1.0 k, PBw = 15.7 kHz 4.5 150 4.0 450 12 4.0 40 50 k x10 mhos ps -4 4.5 8.0 pF pF hie hre hoe rb'Cc NF Input Impedance Voltage Feedback Ratio Output Admittance Collector-Base Time Constant Noise Figure 6.0 4.0 dB dB SWITCHING CHARACTERISTICS ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 30 V, IC = 50 mA I B1 = IB2 = 5.0 mA VCC = 30 V, IC = 50 mA, I B1 = 5.0 mA, VBE ( off ) = 3.0 V 40 15 40 150 140 40 ns ns ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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