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| PN930 Discrete POWER & Signal Technologies PN930 C BE TO-92 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1 to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 45 45 5.0 100 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max PN930 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation PN930 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 10 mA, I B = 0 I C = 10 A, IE = 0 I E = 10 nA, IC = 0 VCE = 5.0 V VCB = 45 V, IE = 0 VCE = 45 V, IE = 0 VCE = 45 V, IE = 0, TA = 170 C VEB = 5.0 V, IC = 0 45 45 5.0 2.0 10 10 10 10 V V V nA nA nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 10 A VCE = 5.0 V, IC = 10 A, T = - 55 C VCE = 5.0 V, IC = 500 A VCE = 5.0 V, IC = 10 mA IC = 10 mA, I B = 0.5 mA IC = 10 mA, I B = 0.5 mA 100 20 150 600 1.0 0.6 1.0 V V 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cob hfe Output Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz IC = 500 A, VCE = 5.0 V, f = 20 MHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 10 A, Rg = 10 k, BW = 15.7 kHz 1.5 150 25 600 32 600 1.0 3.0 x10 mho dB - 8.0 pF hib hrb hob NF Input Impedance Voltage Feedback Ratio Output Admittance Noise Figure 6 *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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