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MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30E2Y/E3Y-2H
* * * * *
IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION DC chopper, DC motor controllers, Inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 23 23 80 23 6.5 (7)
(E2Y) E1 D2 D1 A1 C1
10.5 13 10.5
34
E1 B1
12 B1 E1 (E3Y) D2 D1 LABEL
M5
Tab#110, t=0.5
31
22.5
6.5
(8)
C1
E1
K1
E1
B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Transistor part including D1, Tj=25C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 30 30 310 2 300 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing
(Diode part (D2), Tj=25C)
Conditions Ratings 1000 1100 800 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current 30 600 1.5 x 103 Unit V V V A A A2s
ABSOLUTE MAXIMUM RATINGS
Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage
(Common)
Conditions Ratings -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Transistor part including D1, Tj=25C)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=30A, IB=0.6A -IC=30A (diode forward voltage) IC=30A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.5 3.5 1.8 -- 2.5 15 3.0 0.4 1.5 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance
(Diode part (D2), Tj=25C)
Test conditions VR=VRRM, Tj=150C IF=30A IF=30A, di/dt=-60A/s, VR=600V, Tj=150C Junction to case Conductive grease applied (case to fin) Limits Min. -- -- -- -- -- -- Typ. -- -- -- -- -- -- Max. 10 1.5 1.0 20 1.2 0.15 Unit mA V s C C/ W C/ W
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
VCE=5.0V
DC CURRENT GAIN hFE
80 IB=2A IB=1A 40 IB=0.5A IB=0.3A IB=0.1A
60
VCE=2.0V
20
0
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.6 2.0 2.4 2.8 3.2 3.6 VCE=2.8V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
10 0 VCE(sat) 7 5 4 3 IB=0.6A 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) IC=30A 4 IC=15A 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
3 IC=5A
2
SWITCHING TIME 2 3 4 5 7 10 0
10 1 ts 7 5 VCC=600V 4 IB1=-IB2=0.6A 3 2 10 0 ton 7 tf 5 4 Tj=25C 3 Tj=125C 2 10 0 2 3 4 5 7 10 1
1 0 10 -2 Tj=25C Tj=125C 2 3 4 5 7 10 -1
2 3 4 5 7 10 2 IC (A)
BASE CURRENT IB (A)
COLLECTOR CURRENT
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 VCC=600V IB1=0.6A IC=30A Tj=25C Tj=125C
REVERSE BIAS SAFE OPERATING AREA 80 COLLECTOR CURRENT IC (A) Tj=125C 60 IB2=-1A 40
ts
SWITCHING TIME
tf
20
2 3 4 5 7 10 0
2 3 4 5 7 10 1
0
0
200 400 600 800 1000120014001600 VCE (V)
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0
DERATING FACTOR OF F. B. S. O. A.
50s
1m
100
COLLECTOR CURRENT IC (A)
s
500 s
SECOND BREAKDOWN AREA
s
10 0 7 5 3 2 TC=25C 10 -1 NON-REPETITIVE 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V)
D C
COLLECTOR DISSIPATION
0
20
40
60
80 100 120 140 160 TC (C)
CASE TEMPERATURE
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.5
0.4
Zth (j-c) (C/W)
0.3
0.2
0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
TIME (s)
PERFORMANCE CURVES (Diode part (D1))
FORWARD CHARACTERISTICS (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 0.8 1.2 1.6
MAXIMUM SURGE CURRENT IFSM (A) SURGE FORWARD CURRENT
500
FORWARD CURRENT IF (A)
400
300
200
100
Tj=25C Tj=125C 2.0 2.4
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
FORWARD VOLTAGE
VF (A)
CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
10 2 7 5 3 2 10 2 Tj=25C Tj=125C VCC=600V IB1=-IB2=0.6A
1.6
Irr (A), Qrr (c)
Zth (j-c) (C/W)
10 1 7 5 3 2
Irr
10 1
trr (s)
1.2
Qrr 10 0 10 0 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
FORWARD CURRENT
IF (A)
TIME (s)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES (Diode part (D2))
MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 1.0 1.4 1.8 2.2 VF (V) FORWARD VOLTAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0
FORWARD CURRENT IF (A)
Tj=25C Zth (j-c) (C/W)
1.6
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
MAXIMUM SURGE CURRENT IFSM (A) 1000
REVERSE RECOVERY CHARACTERISTICS (VS. IF) (TYPICAL) 10 2 7 VR=600V 5 di/dt=-60A/s 3 Tj=25C 2 Tj=150C Irr 10 1 7 5 3 2 Qrr 10 0 7 5 trr 3 2 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 FORWARD CURRENT IF (A) 10 2
800 Irr (A), Qrr (C)
SURGE FORWARD CURRENT
10 1 trr (s) 10 0 10 -1 10 2
Feb.1999
600
400
200
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
REVERSE RECOVERY CHARACTERISTICS (VS. di/dt) (TYPICAL) 10 2 7 VR=600V 5 IF=30A 3 Tj=25C 2 Tj=150C 10 1 Irr 7 5 Qrr 3 2 10 2
Irr (A), Qrr (C)
10 1 trr (s)
10 0 10 0 trr 7 5 3 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 di/dt (A/s)

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