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| MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-24B * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 19 21 28.5 7.5 21 28.5 7.5 16.5 21.5 2-5.5 P BuP EuP U 18 40 56 BuP EuP P 25 BvP EvP BwP EwP BvP EvP V BvN EvN BwP EwP W BwN EwN U N BuN EuN V W BuN EuN N BvN EvN 98 1100.2 BwN EwN Tab#250, t=0.8 Tab#110, t=0.5 26.5 Note: All Transistor Units are 4-Stage Darlingtons. 7.5 LABEL 17.5 25.6 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 30 30 310 2 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 500 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=30A, IB1=60mA, -IB2=0.6A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 50 4.0 4.0 1.8 -- 2.5 15 3.0 0.4 1.5 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C IB=200mA 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=10V COLLECTOR CURRENT IC (A) 40 IB=40mA 30 IB=20mA IB=10mA 10 20 DC CURRENT GAIN hFE IB=100mA VCE=4V 0 0 1 2 3 4 5 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.6 3.0 3.4 3.8 4.2 4.6 VCE=4.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=60mA 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 IC=40A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 3 2 ts 10 1 7 5 4 3 2 VCC=600V IB1=60mA -IB2=0.6A tf 3 IC=30A IC=10A SWITCHING TIME ton, ts, tf (s) 2 ton 1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 10 0 7 5 4 3 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 80 SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C 70 IB2=2.5A ts 60 50 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 tf VCC=600V IC=30A IB1=60mA Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 2 100 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 10 2 7 5 3 2 10 1 7 5 3 2 200S 100S 90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA DC 1mS 500S 10 0 7 5 TC=25C 3 NON-REPETITIVE 2 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 10 0 0.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 VCC=600V IB1=60mA -IB2=0.6A 10 1 400 Irr 200 100 10 0 7 5 3 2 10 -1 Qrr 10 0 trr 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 Irr (A), Qrr (c) 10 1 7 5 3 2 |
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