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 WEITRON
Surface Mount Switching Diode
Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package
BAS16W / BAV70W BAW56W / BAV99W
SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS
3 1 2
SOT-323(SC-70)
SOT-323 Outline Demensions
Unit:mm
A
T OP V IE W
B
C
D E G H K L
J
M
Dim A B C D E G H J K L M
SOT-323
Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10
Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25
http://www.weitron.com.tw
WEITRON
BAS16W / BAV70W BAW56W / BAV99W
Maximum Ratings
Characteristic Reverse Voltage Forward Current
(EACH DIODE) Symbol VR IF IFM BAS16W BAV70W BAW56W BAV99W 75 200 500 70 215 Unit Volts mAdc mAdc
Peak Forward Surge Current
Thermal Characteristics
Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C
Thermal Resistance Junction to Ambient
Symbol PD R qJA PD R qJA TJ, Tstg
Max 200 1.6 625 300 2.4 417 -55 to + 150
Unit mW mW/ C C/W mW mW/ C C/W C
Total Device Dissipation Alumina Substrate*2 TA=25 C Derate Above 25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
*1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Electrical Characteristics
Characteristic
(TA=25 C Unless Otherwise Note) (Each Diode) Symbol Min Max Unit
Off Characteristics
Reverse Breakdown Voltage BAS16W (IBR=100 Adc ) BAV70W/BAW56W/BAV99W Reverse Voltage Leakage Current VR=75V VR=70V VR=25V, VR=25V, BAS16W BAV70W/BAW56W/BAV99W TJ=150 C BAS16W/BAW56W/BAV99W TJ=150 C BAV70W
VBR
75 70 1.0 2.5
Vdc
IR
30.0 60.0 50.0 50.0 100.0
Adc
VR=75V, TJ=150 C BAS16W VR=70V, TJ=150 C BAW56W/BAV99W VR=70V, TJ=150 C BAV70W
WEITRON
http://www.weitron.com.tw
BAS16W / BAV70W BAW56W / BAV99W
Off Characteristic
Characteristic Diode Capacition BAS16W/BAW56W (VR=0, f=1.0MHz) BAV70W/BAV99W Forward Voltage (IF=1.0 mAdc) (IF=10 mAdc) (IF=50 mAdc) (IF=150 mAdc) Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100 Symbol CD Min Max 2.0 1.5 715 855 1000 1250 6.0 Unit PF
VF
mVdc
trr
nS
Device Marking
Item BAS16W BAV70W BAW56W BAV99W Marking A6 A4 A1 A7 Eqivalent Circuit diagram
3 3 3 3 1 1 2 1 2 1 2
Figure 1. Recovery Time Equivalent Test Circuit
820 +10V 2.0K IF 0.1F 100 H D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR 0.1F tr 10% tp t IF trr t
90% IR INPUT SIGNAL IR(REC)=1.0mA OUTPUT PULSE (IF=IR=10mA, MEASURED AT IR(REC)=1.0mA
Notes:1. A 2.0 k 3. tp
variable resistor for a Forward Current (IF) 0f 10 mA 2. Input pules is adjusted so IR(peak) is equal to 10 mA
trr
http://www.weitron.com.tw
WEITRON
BAS16W / BAV70W BAW56W / BAV99W
FIGURE 2 .FORWARD VOLTAGE
100 10
FIGURE 3. LEAKAGE CURRENT
TA=150 C TA=125 C 1.0 TA=85 C 0.1 TA=55 C 0.01 TA=25 C 0.001 0 10 20 30 40 50
IF, FORWARD CURRENT (mA)
TA=85 C TA=-40 C 10
TA=25 C
1.0
IA. REVERSE CURRENT (A)
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VR. REVERSE VOLTAGE (VOLTS)
VF, FORWARD VOLTAGE (VOLTS)
CD. DIODE CAPACITANCE (PF)
0.64
CD. DIODE CAPACITANCE (PF)
0.68
FIGURE 4. CAPACITANCE(BAS16W)
1.00
FIGURE 5. CAPACITANCE (BAV70W)
0.90
0.60
0.80
0.56
0.70
0.52 0 2 4 6 8
0.60 0 2 4 6 8
VR. REVERSE VOLTAGE (VOLTS)
VR. REVERSW VOLTAGE (VOLTS)
1.75
FIGURE 6. CAPACITANCE(BAW56W)
CD. DIODE CAPACITANCE (PF)
0.68
FIGUTRE 7. CAPACITANCE (BAV99W)
CD. DIODE CAPACITANCE (PF)
1.50
0.64
1.25
0.60
1.00
0.56
0.75 0 2 4 6 8
0.52
0
2
4
6
8
VR. REVERSE VOLTAGE (VOLTS)
VR. REVERSE VOLTAGE (VOLTS)
WEITRON
http://www.weitron.com.tw


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