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DISCRETE SEMICONDUCTORS
DATA SHEET
BF747 NPN 1 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
FEATURES * Stable oscillator operation * High current gain * Good thermal stability.
handbook, halfpage
BF747
DESCRIPTION Low cost NPN transistor in a plastic SOT23 package.
3
APPLICATIONS * It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. PINNING PIN 1 2 3 base emitter collector DESCRIPTION
Marking code: E15.
1 Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCEO VCBO VEBO ICM Ptot fT Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCEO VCBO VEBO ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation storage temperature junction temperature up to Ts = 70 C; note 1 open base open emitter open collector CONDITIONS MIN. MAX. UNIT - - - - - -55 - 20 30 3 50 300 150 V V V mA mW C PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation transition frequency up to Ts = 70 C; note 1 IC = 15 mA; VCE = 10 V; f = 500 MHz open base open emitter open collector CONDITIONS TYP. MAX. UNIT - - - - - 1.2 20 30 3 50 300 1.6 V V V mA mW GHz
+150 C
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cre GUM Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM PARAMETER collector cut-off current DC current gain transition frequency feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 10 V IC = 2 mA; VCE = 10 V IC = 15 mA; VCE = 10 V; f = 500 MHz IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz MIN. - 40 0.8 - - TYP. - 95 1.2 0.5 20 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note 1 VALUE 260
BF747
UNIT K/W
MAX. 100 250 1.6 - -
UNIT nA GHz pF dB
S 21 = 10 log ------------------------------------------------------------- dB . 2 2 1 - S 11 1 - S 22
2
handbook, halfpage
400
MBB401
MBB397
handbook, halfpage
140
Ptot (mW) 300
h FE
100
200
60 100
0 0 50 100 150 Ts (oC) 200
20 10 1
1
10
I C (mA)
10 2
VCE = 10 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current.
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
handbook, halfpage
1.2
MBB400
handbook, halfpage
1.4
MBB399
Cre (pF)
fT (GHz)
0.8
1.0
0.4
0.6
0 0 4 8 12 16 20 VCB (V)
0.2 10-1
1
10
IC (mA)
102
IE = ie = 0; f = 1 MHz.
VCE = 10 V; f = 500 MHz.
Fig.4
Feedback capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
handbook, halfpage
40
MBB407
MBB408
handbook, halfpage
GUM (dB) 30
50 GUM (dB) 40
30
20
20
10 10 0
0 0 10 20 IC (mA) 30
-10 10
102
103
f (MHz)
104
VCE = 10 V; f = 100 MHz.
IC = 15 mA; VCE = 10 V.
Fig.6
Maximum unilateral power gain as a function of collector current.
Fig.7
Maximum unilateral power gain as a function of frequency.
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
handbook, halfpage
10
MBB398
handbook, halfpage
8
MBB409
VCE sat (V)
F (dB) 6
1
4
10-1 2
10-2 10-1
1
10 IC (mA)
102
0 10-1
1
10
IC (mA)
102
IC/IB = 10.
VCE = 10 V; ZS = ZL = 50 .; f = 100 MHz.
Fig.8
Collector-emitter saturation voltage as a function of collector current.
Fig.9
Common emitter noise figure as a function of collector current.
handbook, halfpage
0
MBB410
handbook, halfpage
80
MBB413
b11 f = 1000 MHz 800 (mS) 600 400 -20
b21 (mS) -5 mA 200 IE = -2 mA 60
-10 mA
-40 -5 mA -60 -10 mA -80
40
IE = -2 mA 200 300 500 600 800 f = 1000 MHz
20
10
20
30
40
50 60 g11 (mS)
0 -50
-40
-30
-20
-10
0 10 g21 (mS)
VCB = 10 V.
VCB = 10 V.
Fig.10 Common base input admittance (Y11).
Fig.11 Common base forward admittance (Y21).
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
handbook, halfpage
0
MBB411
b12 (mS)
handbook, halfpage
8
MBB412
-0.5
b22 (mS) IE = -10 mA -5 mA -2 mA 200 300 6 f = 1000 MHz 800 500 600 800 4 600 500 300 200 f = 1000 MHz
IE = -2 mA -5 mA -10 mA
-1.0
-1.5
-2.0
2
-2.5 -0.7
-0.5
-0.3
g12 (mS)
-0.1
0 0 0.4 0.8 1.2 1.6 g22 (mS)
VCB = 10 V.
VCB = 10 V.
Fig.12 Common base reverse admittance (Y12).
Fig.13 Common base output admittance (Y22).
September 1995
6
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
50
handbook, full pagewidth
25
100
10 3 GHz +j 0 -j 40 MHz 10 10 25 50 100 250
250
250
25 50 IC = 15 mA; VCE = 10 V; ZO = 50 ..
100
MBB403
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90o 120o 60o
40 MHz 150o 30o
+ 180o 20 16 8 4 2 3 GHz 0o -
150o
30o
120o 90o IC = 15 mA; VCE = 10 V.
60o
MBB405
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF747
handbook, full pagewidth
90o 120o 60o
3 GHz 150o 30o
+ 180o 0.1 40 MHz 0.2 0.3 0.4 0.5 0o -
150o
30o
120o 90o IC = 15 mA; VCE = 10 V.
60o
MBB406
Fig.16 Common emitter reverse transmission coefficient (S12).
50
handbook, full pagewidth
25
100
10
250
+j 0 -j 10 25 50 100 250
40 MHz 250
10
3 GHz 25 50 IC = 15 mA; VCE = 10 V; ZO = 50 .. 100
MBB404
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
Table 1 Common base Y-parameters, IE = -2 mA; VCB = 10 V, typical values. Y11 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 Table 2 REAL (mS) 69.0 60.4 45.0 34.3 27.7 24.0 21.5 20.0 18.6 18.3 17.8 IMAG. (mS) -10.2 -20.6 -27.4 -26.4 -23.3 -20.4 -18.0 -15.6 -14.0 -12.8 -11.7 REAL (mS) -68.0 -58.0 -39.1 -25.4 -17.2 -11.7 -7.8 -5.3 -3.0 -1.3 -0.1 Y21 IMAG. (mS) 12.3 25.6 34.5 34.0 31.1 27.6 25.0 22.6 20.2 18.7 17.1 REAL (mS) -0.02 -0.06 -0.10 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 Y12 IMAG. (mS) -0.1 -0.3 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 REAL (mS) -0.01 -0.08 0.19 0.29 0.37 0.45 0.53 0.60 0.69 0.82 0.95
BF747
Y22 IMAG. (mS) 0.3 0.7 1.4 1.9 2.5 3.0 3.6 4.2 4.7 5.3 5.9
Common base Y-parameters, IE = -5 mA; VCB = 10 V, typical values. Y11 Y21 IMAG. (mS) -35.7 -62.0 -57.8 -46.9 -38.6 -32.8 -28.4 -25.2 -22.6 -20.7 -19.1 REAL (mS) -130.5 -91.1 -46.0 -26.4 -16.6 -11.0 -6.3 -3.3 -0.6 1.4 3.0 IMAG. (mS) 38.8 67.9 64.7 53.8 45.8 39.8 35.0 31.4 27.6 25.2 23.0 REAL (mS) -0.06 -0.20 -0.30 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 Y12 IMAG. (mS) -0.2 -0.5 -0.7 -0.8 -1.0 -1.3 -1.4 -1.6 -1.9 -2.1 -2.3 REAL (mS) -0.06 0.21 0.38 0.47 0.58 0.63 0.71 0.80 0.88 1.01 1.15 Y22 IMAG. (mS) 0.4 0.8 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 6.0
f (MHz) 40 100 200 300 400 500 600 700 800 900 1000
REAL (mS) 132.6 96.3 54.7 37.5 29.2 25.3 22.0 20.3 18.7 17.8 17.3
September 1995
9
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
Table 3 Common base Y-parameters, IE = -10 mA; VCB = 10 V, typical values. Y11 f (MHZ) 40 100 200 300 400 500 600 700 800 900 1000 Table 4 REAL (mS) 189.0 108.5 55.2 37.1 28.8 24.7 21.2 19.3 17.2 16.4 15.8 IMAG. (mS) -79.6 -99.0 -76.2 -59.0 -47.6 -40.2 -35.0 -31.0 -27.5 -25.2 -23.0 REAL (mS) -185.5 -101.4 -44.6 -24.3 -14.6 -8.6 -3.4 -0.2 2.6 4.6 6.0 Y21 IMAG. (mS) 83.0 105.4 82.8 65.7 54.4 46.7 40.8 36.2 31.1 28.3 25.5 REAL (mS) -0.10 -0.30 -0.50 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 Y12 IMAG. (mS) -0.3 -0.5 -0.7 -0.9 -1.0 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) -0.09 0.30 0.44 0.60 0.69 0.75 0.84 0.93 1.00 1.15 1.31
BF747
Y22 IMAG. (mS) 0.4 0.9 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 6.0
Common base Y-parameters, IE = -15 mA; VCB = 10 V, typical values. Y11 Y21 IMAG. (mS) -113.8 -114.0 -81.1 -62.1 -50.0 -42.3 -36.4 -32.0 -28.2 -25.7 -23.5 REAL (mS) -202.6 -96.4 -41.7 -22.0 -12.5 -6.1 -1.2 2.0 4.5 6.5 7.9 IMAG. (mS) 118.1 120.1 87.7 68.6 56.9 48.2 41.6 36.7 31.3 28.1 24.9 REAL (mS) -0.20 -0.40 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 Y12 IMAG. (mS) -0.3 -0.5 -0.7 -0.8 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) 0.2 0.4 0.6 0.7 0.8 0.8 0.9 1.0 1.1 1.3 1.4 Y22 IMAG. (mS) 0.5 0.9 1.4 2.0 2.5 3.1 3.6 4.2 4.7 5.3 5.9
f (MHz) 40 100 200 300 400 500 600 700 800 900 1000
REAL (mS) 206.5 104.3 53.1 35.9 28.1 23.4 20.1 18.2 16.2 15.5 14.7
September 1995
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Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
PACKAGE OUTLINE
BF747
handbook, full pagewidth
3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A
0.55 0.45
10 o max
1.4 1.2
2.5 max
MBC846
Dimensions in mm.
Fig.18 SOT23.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
September 1995
11

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