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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
D D D D D D D
Organization - TM2SR72EPN . . . 2 097 152 x 72 Bits - TM4SR72EPN . . . 4 194 304 x 72 Bits Single 3.3-V Power Supply (10% Tolerance) Designed for 66-MHz 4-Clock Systems JEDEC 168-Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket TM2SR72EPN -- Uses Nine 16M-Bit Synchronous Dynamic RAMs (SDRAMs) (2M x 8-Bit) in Plastic Thin Small-Outline Packages (TSOPs) TM4SR72EPN -- Uses 18 16M-Bit SDRAMs (2M x 8-Bit) in Plastic TSOPs Performance Ranges:
SYNCHRONOUS CLOCK CYCLE TIME tCK3 tCK2 (CL = 3) (CL = 2) ACCESS TIME (CLOCK TO OUTPUT) tAC2 tAC3 (CL = 3) (CL = 2) 7.5 ns 7 ns REFRESH INTERVAL
D D D D D D D D D D
High-Speed, Low-Noise Low-Voltage TTL (LVTTL) Interface Byte-Read/Write Capability Read Latencies 2 and 3 Supported Support Burst-Interleave and Burst-Interrupt Operations Burst Length Programmable to 1, 2, 4, and 8 Two Banks for On-Chip Interleaving (Gapless Access) Ambient Temperature Range 0C to 70C Gold-Plated Contacts Pipeline Architecture Serial Presence Detect (SPD) Using EEPROM
'xSR72EPN-10
10 ns
15 ns
64 ms
CL = CAS latency
description
The TM2SR72EPN is a 16M-byte, 168-pin dual-in-line memory module (DIMM). The DIMM is composed of nine TMS626812ADGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic thin small-outline package (TSOP) mounted on a substrate with decoupling capacitors. See the TMS626812A data sheet (literature number SMOS691). The TM4SR72EPN is a 32M-byte, 168-pin DIMM. The DIMM is composed of eighteen TMS626812ADGE, 2 097 152 x 8-bit SDRAMs, each in a 400-mil, 44-pin plastic TSOP mounted on a substrate with decoupling capacitors. See the TMS626812A data sheet (literature number SMOS691).
operation
The TM2SR72EPN operates as nine TMS626812ADGE devices that are connected as shown in the TM2SR72EPN functional block diagram. The TM4SR72EPN operates as eighteen TMS626812ADGE devices connected as shown in the TM4SR72EPN functional block diagram.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright (c) 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
DUAL-IN-LINE MEMORY MODULE ( TOP VIEW )
TM2SR72EPN ( SIDE VIEW )
TM4SR72EPN ( SIDE VIEW ) A[0:10] A[0:8] A11/BA0 CAS CB[0:7] CKE[0:1] CK[0:3] DQ[0:63] DQMB[0:7] NC RAS S[0:3] SA[0:2] SCL SDA VDD VSS WE
PIN NOMENCLATURE Row-Address Inputs Column-Address Inputs Bank-Select Zero Column-Address Strobe Data In / Data Out Clock Enable System Clock Data In / Data Out Data-In / Data-Out Mask Enable No Connect Row-Address Strobe Chip-Select Serial Presence Detect (SPD) Device Address Input SPD Clock SPD Address / Data 3.3-V Supply Ground Write Enable
1
10 11
40
41
84
2
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
Pin Assignments
PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 NAME VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 CB0 CB1 VSS NC NC VDD WE DQMB0 DQMB1 S0 NC VSS A0 A2 A4 A6 A8 A10 NC VDD VDD CK0 NO. 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 PIN NAME VSS NC S2 DQMB2 DQMB3 NC VDD NC NC CB2 CB3 VSS DQ16 DQ17 DQ18 DQ19 VDD DQ20 NC NC CKE1 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS CK2 NC NC SDA SCL VDD NO. 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 PIN NAME VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 CB4 CB5 VSS NC NC VDD CAS DQMB4 DQMB5 S1 RAS VSS A1 A3 A5 A7 A9 A11/BA0 NC VDD CK1 NC NO. 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 PIN NAME VSS CKE0 S3 DQMB6 DQMB7 NC VDD NC NC CB6 CB7 VSS DQ48 DQ49 DQ50 DQ51 VDD DQ52 NC NC NC VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS CK3 NC SA0 SA1 SA2 VDD
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
dual-in-line memory module and components
The dual-in-line memory module and components include:
D D D
PC substrate: 1,27 0,1 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage Bypass capacitors: Multilayer ceramic Contact area: Nickel plate and gold plate over copper
functional block diagram for the TM2SR72EPN
S0 CS DQMB0 R DQ[0:7] 8 DQM DQ[0:7] U0 DQMB4 R DQ[32:39] 8 CS DQM DQ[0:7] U4 CK1 CK0 RB U0, U4 RB U1, U5, U8 RC U2, U6 RC U3, U7 CS DQMB1 R DQ[8:15] 8 DQM DQ[0:7] U1 DQMB5 R DQ[40:47] 8 CS CK2 DQM DQ[0:7] CK3 CS DQMB1 R CB[0:7] 8 DQM DQ[0:7] U8 R = 10 RB = 5 RC = 10 C = 10 pF C U5 RC C RC
S2 CS DQMB2 R DQ[16:23] 8 DQM DQ[0:7] U2 DQMB6 R DQ[48:55] 8 CS DQM DQ[0:7] U6
VDD
U[0:8] Two 0.33 F per SDRAM
VSS
U[0:8]
CS DQMB3 R DQ[24:31] RAS CAS WE CKE0 A[0:11] 8 DQM DQ[0:7] U3 DQMB7 R DQ[56:63] 8
CS DQM DQ[0:7] U7
RAS: SDRAM U[0:8] CAS: SDRAM U[0:8] WE: SDRAM U[0:8] CKE: SDRAM U[0:8] A[0:11]: SDRAM U[0:8] SCL
SPD EEPROM SDA A0 SA0 A1 SA1 A2 SA2
LEGEND: CS = Chip Select SPD = Serial Presence Detect
4
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
functional block diagram for the TM4SR72EPN
S1 S0 CS CS CS CS VSS U0 DQMB0 R DQ[0:7] 8 DQM DQ[0:7] UB0 DQM DQ[0:7] DQMB4 R DQ[32:39] 8 U4 DQM DQ[0:7] UB4 DQM DQ[0:7] R = 10 RC = 10 RB = 5 RB CS CS CS CS CK: U0, U4 CK0 RB CK: U1, U5, U8 U1 DQMB1 R DQ[8:15] 8 DQM DQ[0:7] UB1 DQM DQ[0:7] DQMB5 R DQ[40:47] 8 U5 DQM DQ[0:7] UB5 DQM DQ[0:7] RC CK: U2, U6 CS CS CK2 RC CK: U3, U7 RC U8 DQMB1 R CB[0:7] 8 DQM DQ[0:7] UB8 DQM DQ[0:7] VDD S3 S2 CS CS CS CS CKE1 CKE0 RAS U2 DQMB2 R DQ[16:23] 8 DQM DQ[0:7] UB2 DQM DQ[0:7] DQMB6 R DQ[48:55] 8 U6 DQM DQ[0:7] UB6 DQM WE DQ[0:7] A[0:11] CS CS CS CS A[0:11]: U[0:8], UB[0:8] WE: U[0:8], UB[0:8] CAS 10 K CKE: UB[0:8] CKE: U[0:8] RAS: U[0:8], UB[0:8] CAS: U[0:8], UB[0:8] CK3 RC CK: UB3, UB7 CK: UB2, UB6 CK1 RB CK: UB0, UB4 RB CK: UB1, UB5, UB8 VDD U[0:8], UB[0:8] Two 0.33 F per SDRAM U[0:8], UB[0:8]
U3 DQMB3 R DQ[24:31] 8 DQM DQ[0:7]
UB3 DQM DQ[0:7] DQMB7 R DQ[56:63] 8
U7 DQM DQ[0:7]
UB7 DQM DQ[0:7]
SPD EEPROM SCL A0 A1 A2 SDA
SA0 SA1 SA2
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
absolute maximum ratings over ambient temperature range (unless otherwise noted)
Supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 V to 4.6 V Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V to 4.6 V Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power dissipation: TM2SR72EPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 W TM4SR72EPN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 W Ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 150C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to VSS.
recommended operating conditions
MIN VDD VSS VIH VIH-SPD Supply voltage Supply voltage High-level input voltage High-level input voltage for SPD device Low-level input voltage 2 2 -0.3 0 3 NOM 3.3 0 VDD + 0.3 5.5 0.8 70 MAX 3.6 UNIT V V V V V C
VIL TA Ambient temperature VIL MIN = -1.5 V ac (pulse width
v 5 ns)
capacitance over recommended ranges of supply voltage and ambient temperature, f = 1 MHz (see Note 2)
PARAMETERS Ci(CK) Ci(AC) Ci(CKE) Co Ci(DQMBx) Ci(Sx) Ci/o(SDA) Input capacitance, CK input Input capacitance, address and control inputs: A0 - A11, RAS, CAS, WE Input capacitance, CKE input Output capacitance Input capacitance, DQMBx input Input capacitance, Sx input Input/output capacitor, SDA input TMxSR72EPN MIN MAX 4 5 5 6.5 5 5 9 7 UNIT pF pF pF pF pF pF pF pF
Ci(SPD) Input capacitor, SA0, SA1, SA2, SCL inputs Specifications in this table represent a single SDRAM device. NOTE 2: VDD = 3.3 V 0.3 V. Bias on pins under test is 0 V.
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
electrical characteristics over recommended ranges of supply voltage and ambient temperature (unless otherwise noted) (see Note 3)
PARAMETER VOH VOL II IO High-level output voltage Low-level output voltage Input current (leakage) Output current (leakage) IOH = - 2 mA IOL = 2 mA 0 V < VI < VDD + 0.3 V, All other pins = 0 V to VDD 0 V < VO < VDD +0.3 V, Output disabled Burst length = 1, CAS latency = 2 tRC tRC MIN IOH/IOL = 0 mA, one bank CAS latency = 3 activated (see Note 4) CKE VIL MAX, tCK = 15 ns (see Note 5) Precharge standby current in power-down mode CKE and CK VIL MAX, tCK = (see Note 6) CKE VIH MIN, tCK = 15 ns (see Note 5) CKE VIH MIN, CK VIL MAX, tCK = (see Note 6) CKE VIL MAX, tCK = 15 ns (see Note 5) Active standby current in power-down mode CKE and CK VIL MAX, tCK = (see Note 6) CKE VIH MIN, tCK = 15 ns (see Note 5) Active standby current in non-power-down mode CKE VIH MIN, CK VIL MAX, tCK = (see Note 6) Page burst, IOH/IOL = 0 mA CAS latency = 2 All banks activated, , nCCD = one cycle CAS latency = 3 (see Note 7) tRC tRC MIN CAS latency = 2 CAS latency = 3 TEST CONDITIONS 'xSR72EPN-10 MIN 2.4 0.4 MAX UNIT V V A A mA mA mA mA mA mA mA mA mA mA mA mA mA mA
"10 "10
95 105 2 2 25 2 3 3 30 10 100 130 85 95
ICC1 ICC2P ICC2PS ICC2N ICC2NS ICC3P ICC3PS ICC3N ICC3NS
Operating current
Precharge standby current in non power down non-power-down mode
ICC4
Burst current
ICC5
Auto-refresh Auto refresh current
ICC6 Self-refresh current CKE VIL MAX 2 mA Specifications in this table represent a single SDRAM device. NOTES: 3. All specifications apply to the device after power-up initialization. All control and address inputs must be stable and valid. 4. Control, DQ, and address inputs change state only twice during tRC. 5. Control, DQ, and address inputs change state only once every 30 ns. 6. Control, DQ, and address inputs do not change (stable). 7. Control, DQ, and address inputs change only once every cycle.
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
ac timing requirements
'xSR72EPN-10 MIN tCK2 tCK3 tCH tCL tAC2 tAC3 tOH tLZ tHZ tIS tIH tCESP tRAS tRC tRCD tRP tRRD tRSA tAPR tAPW tWR tT tREF nCCD nCDD nCLE nCWL nDID nDOD nHZP2 nHZP3 Cycle time, CLK, CAS latency = 2 Cycle time, CLK, CAS latency = 3 Pulse duration, CLK high Pulse duration, CLK low Access time, CLK high to data out, CAS latency = 2 (see Note 8) Access time, CLK high to data out, CAS latency = 3 (see Note 8) Hold time, CLK high to data out Delay time, CLK high to DQ in low-impedance state (see Note 9) Delay time, CLK high to DQ in high-impedance state (see Note 10) Setup time, address, control, and data input Hold time, address, control, and data input Power-down/self-refresh exit time Delay time, ACTV command to DEAC or DCAB command Delay time, ACTV, REFR, or SLFR exit to ACTV, MRS, REFR, or SLFR command Delay time, ACTV command to READ, READ-P, WRT, or WRT-P command (see Note 11) Delay time, DEAC or DCAB command to ACTV, MRS, REFR, or SLFR command Delay time, ACTV command in one bank to ACTV command in the other bank Delay time, MRS command to ACTV, MRS, REFR, or SLFR command Final data out of READ-P operation to ACTV, MRS, SLFR, or REFR command Final data in of WRT-P operation to ACTV, MRS, SLFR, or REFR command Delay time, final data in of WRT operation to DEAC or DCAB command Transition time (see Note 12) Refresh interval Delay time, READ or WRT command to an interrupting command Delay time, CS low or high to input enabled or inhibited Delay time, CKE high or low to CLK enabled or disabled Delay time, final data in of WRT operation to READ, READ-P, WRT, WRT-P Delay time, ENBL or MASK command to enabled or masked data in Delay time, ENBL or MASK command to enabled or masked data out Delay time, DEAC or DCAB command to DQ in high-impedance state, CAS latency = 2 Delay time, DEAC or DCAB command to DQ in high-impedance state, CAS latency = 3 1 0 1 1 0 2 0 2 2 3 0 1 3 1 10 50 80 30 30 20 20 tRP - (CL -1) * tCK tRP + tCK 10 1 5 64 100 000 3 2 8 15 10 3 3 7 7.5 MAX UNIT ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms cycle cycle cycle cycle cycle cycle cycle cycle
nWCD Delay time, WRT command to first data in 0 0 cycle All references are made to the rising transition of CKx, unless otherwise noted. Specifications in this table represent a single SDRAM device. NOTES: 8. tAC is referenced from the rising transition of CK that is previous to the data-out cycle. For example, the first data out tAC is referenced from the rising transition of CKx that is CAS latency - one cycle after the READ command. Access time is measured at output reference level 1.4 V. 9. tLZ is measured from the rising transition of CKx that is CAS latency - one cycle after the READ command. 10. tHZ MAX defines the time at which the outputs are no longer driven and is not referenced to output voltage levels. 11. For read or write operations with automatic deactivate, tRCD must be set to satisfy minimum tRAS. 12. Transition time, tT, is measured between VIH and VIL.
8
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
serial presence detect
The serial presence detect (SPD) is contained in a 2K-bit serial EEPROM located on the module. The SPD nonvolatile EEPROM contains various data such as module configuration, SDRAM organization, and timing parameters (see tables below). Only the first 128 bytes are programmed by Texas Instruments, while the remaining 128 bytes are available for customer use. Programming is done through a IIC bus using the clock (SCL) and data (SDA) signals. All Texas Instruments modules comply with the current JEDEC SPD Standard. See the Texas Instruments Serial Presence Detect Technical Reference (literature number SMMU001) for further details.Tables in this section list the SPD contents as follows: Tables in this section list the SPD contents as follows: Table 1-TM2SR72EPN Table 2-TM4SR72EPN
Table 1. Serial Presence Detect Data for the TM2SR72EPN
BYTE NO. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION OF FUNCTION Defines number of bytes written into serial memory during module manufacturing Total number of bytes of SPD memory device Fundamental memory type (FPM, EDO, SDRAM, . . .) Number of row addresses on this assembly Number of column addresses on this assembly Number of module rows on this assembly Data width of this assembly Data width continuation Voltage interface standard of this assembly SDRAM cycle time at maximum supported CAS latency (CL), CL = X SDRAM access from clock at CL = X DIMM configuration type (non-parity, parity, error correcting code [ECC]) Refresh rate / type SDRAM width, primary DRAM Error-checking SDRAM data width Minimum clock delay, back-to-back random column addresses Burst lengths supported Number of banks on each SDRAM device CAS latencies supported CS latency Write latency LVTTL tCK = 10 ns tAC = 7.5 ns ECC 15.6 s/ self-refresh x8 x8 1 CK cycle 1, 2, 4, 8 2 banks 2, 3 0 0 TM2SR72EPN-10 ITEM 128 bytes 256 bytes SDRAM 11 9 1 bank 72 bits DATA 80h 08h 04h 0Bh 09h 01h 48h 00h 01h A0h 75h 02h 80h 08h 08h 01h 0Fh 02h 06h 01h 01h
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
serial presence detect (continued)
Table 1. Serial Presence Detect Data for the TM2SR72EPN (Continued)
BYTE NO. 21 SDRAM module attributes DESCRIPTION OF FUNCTION TM2SR72EPN-10 ITEM Non-buffered/ Non-registered VDD tolerance = (+10%) , Burst read / write, precharge all, auto precharge tCK = 15 ns tAC = 7 ns N/A N/A tRP = 30 ns tRRD = 20 ns tRCD = 30 ns tRAS = 50 ns 16M Bytes tIS = 3 ns tIH = 1 ns tIS = 3 ns tIH = 1 ns Rev. 2 33 97h TBD TBD TBD TBD TBD TBD TBD TBD TBD DATA 00h
22
SDRAM device attributes: general
0Eh
23 24 25 26 27 28 29 30 31 32 33 34 35 36- 61 62 63 64 - 71 72 73-90 91 92 93-94 95-98 99-125 126-127 128-166 167-255
Minimum clock cycle time at CL = X - 1 Maximum data-access time from clock at CL = X - 1 Minimum clock cycle time at CL = X - 2 Maximum data-access time from clock at CL = X - 2 Minimum row precharge time Minimum row-active to row-active delay Minimum RAS-to-CAS delay Minimum RAS pulse width Density of each bank on module Command and address signal input setup time Command and address signal input hold time Data signal input setup time Data signal input hold time Superset features (may be used in the future) SPD revision Checksum for byte 0 - 62 Manufacturer's JEDEC ID code per JEP - 106E Manufacturing location Manufacturer's part number Die revision code PCB revision code Manufacturing date Assembly serial number Manufacturer specific data Vendor specific data System integrator's specific data Open
F0h 70h 00h 00h 1Eh 14h 1Eh 32h 04h 30h 10h 30h 10h 02h 21h 9700...00h
TBD indicates values are determined at manufacturing time and are module dependent. These TBD values are determined and programmed by the customer (optional).
10
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SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
serial presence detect (continued)
Table 2. Serial Presence Detect Data for the TM4SR72EPN
BYTE NO. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 DESCRIPTION OF FUNCTION Defines number of bytes written into serial memory during module manufacturing Total number of bytes of SPD memory device Fundamental memory type (FPM, EDO, SDRAM, . . .) Number of row addresses on this assembly Number of column addresses on this assembly Number of module banks on this assembly Data width of this assembly Data width continuation Voltage interface standard of this assembly SDRAM cycle time at maximum supported CAS latency (CL), CL = X SDRAM access from clock at CL = X DIMM configuration type (non-parity, parity, error correcting code [ECC]) Refresh rate / type SDRAM width, primary DRAM Error-checking SDRAM data width Minimum clock delay, back-to-back random column addresses Burst lengths supported Number of banks on each SDRAM device CAS latencies supported CS latency Write latency SDRAM module attributes LVTTL tCK = 10 ns tAC = 7.5 ns ECC 15.6 s/ self-refresh x8 x8 1 CK cycle 1, 2, 4, 8 2 banks 2, 3 0 0 Non-buffered/ Non-registered VDD tolerance = (+10%) , Burst read / write, precharge all, auto precharge tCK = 15 ns tAC = 7 ns N/A N/A tRP = 30 ns tRRD = 20 ns tRCD = 30 ns tRAS = 50 ns 16M Bytes TM4SR72EPN-10 ITEM 128 bytes 256 bytes SDRAM 11 9 2 banks 72 bits DATA 80h 08h 04h 0Bh 09h 02h 48h 00h 01h A0h 75h 02h 80h 08h 08h 01h 0Fh 02h 06h 01h 01h 00h
22
SDRAM device attributes: general
0Eh
23 24 25 26 27 28 29 30 31
Minimum clock cycle time at CL = X - 1 Maximum data-access time from clock at CL = X - 1 Minimum clock cycle time at CL = X - 2 Maximum data-access time from clock at CL = X - 2 Minimum row precharge time Minimum row-active to row-active delay Minimum RAS-to-CAS delay Minimum RAS pulse width Density of each bank on module
F0h 70h 00h 00h 1Eh 14h 1Eh 32h 04h
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
serial presence detect (continued)
Table 2. Serial Presence Detect data for the TM4SR72EPN (Continued)
BYTE NO. 32 33 34 35 36 - 61 62 63 64 - 71 72 73-90 91 92 93-94 95-98 99-125 126-127 128-166 DESCRIPTION OF FUNCTION Command and address signal input setup time Command and address signal input hold time Data signal input setup time Data signal input hold time Superset features (may be used in the future) SPD revision Checksum for byte 0 - 62 Manufacturer's JEDEC ID code per JEP - 106E Manufacturing location Manufacturer's part number Die revision code PCB revision code Manufacturing date Assembly serial number Manufacturer specific data Vendor specific data System integrator's specific data Rev. 2 34 97h TBD TBD TBD TBD TBD TBD TBD TBD TBD 02h 22h 9700...00h TM4SR72EPN-10 ITEM tIS = 3 ns tIH = 1 ns tIS = 3 ns tIH = 1 ns DATA 30h 10h 30h 10h
167-255 Open TBD indicates values are determined at manufacturing time and are module dependent. These TBD values are determined and programmed by the customer (optional).
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
device symbolization (TM2SR72EPN)
TM2SR72EPN Unbuffered Key Position YY MM T -SS = = = =
-SS
YYMMT
3.3-V Voltage Key Position Year Code Month Code Assembly Site Code Speed Code
NOTE A: Location of symbolization may vary.
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TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES
SMMS698A - JUNE 1997 - REVISED FEBRUARY 1998
MECHANICAL DATA
BU (R-PDIM-N168) DUAL IN-LINE MEMORY MODULE
5.255 (133,48) 5.245 (133,22) Notch 0.157 (4,00) x 0.122 (3,10) Deep 2 Places
(Note D) Notch 0.079 (2,00) x 0.122 (3,10) Deep 2 Places 0.054 (1,37) 0.046 (1,17)
0.039 (1,00) TYP 0.125 (3,18) 0.118 (3,00) DIA 2 Places
0.050 (1,27) 0.125 (3,18)
0.014 (0,35) MAX 0.118 (3,00) TYP 0.700 (17,78) TYP 1.255 (31,88) 1.245 (31,62) 0.106 (2,70) MAX 0.157 (4,00) MAX (For Double Sided DIMM Only) 4088183/A 06/97
NOTES: A. B. C. D. E.
All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. Falls within JEDEC MO-161 Dimension includes de-panelization variations; applies between notch and tab edge. Outline may vary above notches to allow router/panelization irregularities.
14
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