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TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 - OCTOBER 1991 D D D D Gallium-Arsenide Diode Infrared Source Source Is Optically Coupled to Silicon N-P-N Darlington Phototransistor Choice of One, Two, or Four Channels Choice of Two Current-Transfer Ratios D D D High-Voltage Electrical Isolation . . . 7.5 kV Peak (5.3 kV rms) Plastic Dual-In-Line Packages UL Listed - File No. E65085 description These optocouplers consist of a gallium-arsenide light-emitting diode and a silicon n-p-n Darlington phototransistor per channel. The TIL923 has one channel in a 4-pin package, the TIL924 has two channels in a 8-pin package, and the TIL925 has four channels in a 16-pin package. The standard devices, TIL923, TIL924, and TIL925, are tested for a current-transfer ratio of 500% minimum. Devices selected for a current-transfer ratio of 1000% are designated with the suffix. mechanical data 4,80 (0.189) 4,19 (0.165) TIL923 Pin 1 1 10,2 (0.400) 9,2 (0.362) TIL924 Pin 1 1 21,1 (0.831) 18,5 (0.728) TIL925 C L C L Pin 1 7,62 (0.300) T.P. (see Note A) 6,76 (0.266) 6,25 (0.246) 3,81 (0.150) 3,30 (0.130) 2,79 (0.110) 2,29 (0.090) (see Note A) 5,08 (0.200) MAX 1 1,27 (0.050) 1,12 (0.044) Seating Plane 105 90 0,36 (0.014) 0,20 (0.008) 3,81 (0.150) 2,54 (0.100) 0,51 (0.020) MIN 0,58 (0.023) 0,43 (0.017) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTE A: Each pin centerline is located 0,25 (0.010) of its true longitudinal position. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 1991, Texas Instruments Incorporated POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 - OCTOBER 1991 schematic diagrams TIL923 A K 1 2 4 3 C 1A 1K 2A 2K 1 2 3 4 TIL924 8 7 6 5 1C 1A 1K 1E 2C 2E 3A 3K 4A 4K 2A 2K 1 2 3 4 5 6 7 8 TIL925 16 15 14 13 12 1C E 1E 2C 2E 3C 11 3E 10 4C 9 4E absolute maximum ratings at 25C free-air temperature (unless otherwise noted) Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV peak or dc (5.3 kV rms) Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V Input diode continuous forward current at (or below) 25C free-air temperature (see Note 3) . . . . . . . 50 mA Continuous power dissipation at (or below) 25C free-air temperature: Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW Operating free-air temperature, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 100C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 125C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements. 2. This value applies when the base-emitter diode is open circuited. 3. Derate linearly to 100C free-air temperature at the rate of 0.67 mA/C. 4. Derate linearly to 100C free-air temperature at the rate of 2 mW/C. 5. Derate linearly to 100C free-air temperature at the rate of 2.67 mW/C. electrical characteristics, TA = 25C (unless otherwise noted) PARAMETER V(BR)CEO V(BR)ECO IR IC(off) CTR VF VCE(sat) Cio rio Collector-emitter breakdown voltage Emitter-collector breakdown voltage Input diode static reverse current Off-state collector current Current transfer ratio TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A TEST CONDITIONS IC = 0.5 mA, IC = 100 A, VR = 5 V VCE = 10 V, IF = 2 mA mA, IF = 20 mA IF = 10 mA, Vin-out = 0, Vin-out = 1 kV, IF = 0 IF = 0 IF = 0 VCE = 1 V 500% 1000% 1.4 IC = 50 mA f = 1 MHz, See Note 6 1 See Note 6 1 1011 V V pF MIN 35 7 10 100 TYP MAX UNIT V V A nA Input diode static forward voltage Collector-emitter saturation voltage Input-to-output capacitance Input-to-output internal resistance NOTE 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together. 2 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 - OCTOBER 1991 switching characteristics at 25C free-air temperature PARAMETER tr tf Rise time Fall time VCC = 10 V, V TEST CONDITIONS IC( ) = 10 mA mA, C(on) RL = 100 , See Figure 1 MIN TYP 100 100 MAX UNIT s PARAMETER MEASUREMENT INFORMATION 47 Input (see Note A) Input 0 tr tf 90% 10% 0 Adjust amplitude of input pulse for IC(on) = 10 mA VOLTAGE WAVEFORMS 90% 10% Output (see Note B) + VCC = 10 V - RL = 100 Output TEST CIRCUIT NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo = 50 , tr 15 ns, duty cycle = 1%, tw = 500 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Rin 1 M, Cin 20 pF. Figure 1. Switching Times POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 - OCTOBER 1991 TYPICAL CHARACTERISTICS FORWARD CURRENT vs FORWARD VOLTAGE 160 140 TA = 70C I F - Forward Current - mA 120 100 80 60 TA = 25C 40 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VF - Forward Voltage - V 1.8 2 TA = -55C I C - Collector Current - mA 200 IF = 10 mA COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE IF = 9 mA IF = 8 mA IF = 7 mA IF = 6 mA IF = 5 mA IF = 4 mA 180 160 140 120 100 80 60 40 20 0 0 TA = 25C See Note A IF = 3 mA IF = 2 mA IF = 1 mA 2 0.5 1 1.5 VCE - Collector-Emitter Voltage - V 2.5 NOTE A: Pulse operation is required for operation beyond limits shown by the dashed line. Figure 2 COLLECTOR CURRENT vs INPUT DIODE FORWARD CURRENT 1000 400 I C - Collector Current - mA VCE = 1 V TA = 25C See Note A Figure 3 100 40 10 4 1 0.4 0.1 0.1 100 0.4 1 4 10 40 IF - Forward Current - mA NOTE A: These parameters are measured using pulse techniques tw = 1 ms, duty cycle 2%. Figure 4 4 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TIL923, TIL924, TIL925 TIL923A, TIL924A, TIL925A SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS031 - OCTOBER 1991 TYPICAL CHARACTERISTICS RELATIVE ON-STATE COLLECTOR CURRENT vs FREE-AIR TEMPERATURE 1.2 Collector Current Relative to Value at T = 25C A I C(off) - Off-State Collector Current - A VCE = 1 V 1 IF = 2 mA IF = 10 mA 0.6 IF = 10 mA 1000 IF = 0 100 OFF-STATE COLLECTOR CURRENT vs FREE-AIR TEMPERATURE 0.8 10 1 VCE = 10 V 0.1 0.4 IF = 2 mA 0.2 0.01 0 -75 0.001 -50 -25 0 25 50 75 TA - Free-Air Temperature - C 100 0 25 50 75 TA - Free-Air Temperature - C 100 Figure 5 Figure 6 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER'S RISK. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI's publication of information regarding any third party's products or services does not constitute TI's approval, warranty or endorsement thereof. Copyright (c) 1998, Texas Instruments Incorporated |
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