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| Target data sheet SIPMOS (R) Power Transistor * N-Channel * SPPXXN10 - Enhancement mode * Avalanche rated * dv/dt rated * 175C operating temperature Pin 1 G Pin 2 D Pin 3 S Type SPPXXN10 - VDS 100 V ID 52 A RDS(on) 0.033 @ VGS VGS = 10 V Package P-TO220-3-1 - Ordering Code - Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 52 36 Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpulse EAS IAR EAR dv/dt 208 650 52 17.5 6 mJ A mJ kV/s TC = 25 C Avalanche energy, single pulse ID = 52 A, V DD = 25 V, RGS = 25 Avalanche current,periodic limited by jmax T Avalanche energy,periodic limited by j(max) T Reverse diode d v/dt IS = 52 A, VDD V (BR)DSS, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot Tj Tstg 20 175 -55 ... +175 -55 ... +175 55/175/56 V W C TC = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 06 / 1998 Target data sheet Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. tbd 62.5 tbd tbd SPPXXN10 - Unit max. 0.85 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 100 2.1 3 4 V VGS = 0 V, ID = 0.25 mA Gate threshold voltage,VGS = VDS ID = 0.75 mA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 36 A A 0.1 10 1 100 100 nA - IGSS RDS(on) 0.033 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 06 / 1998 Target data sheet Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. - SPPXXN10 - Unit max. tbd tbd tbd tbd ns S pF gfs Ciss Coss Crss td(on) tbd - VDS2*ID*RDS(on)max , ID = 36 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, V GS = 10 V, I D = 52 A, RG = 4.7 Rise time tr - - tbd VDD = 30 V, V GS = 10 V, I D = 52 A, RG = 4.7 Turn-off delay time td(off) - - tbd VDD = 30 V, V GS = 10 V, I D = 52 A, RG = 4.7 Fall time tf - - tbd VDD = 30 V, V GS = 10 V, I D = 52 A, RG = 4.7 Semiconductor Group 3 06 / 1998 Target data sheet SPPXXN10 - Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. tbd tbd tbd tbd max. V nC nC Unit Q G(th) Q g(7) Qg V(plateau) - VDD = 0 V, ID0,1 A, V GS = 0 to 1 V Gate charge at Vgs=7V VDD = 24 V, ID = 52 A, VGS = 0 to 7 V Gate charge total VDD = 80 V, ID = 52 A, VGS = 0 to 10 V Gate plateau voltage VDD = - V, ID = 52 A Reverse Diode Inverse diode continuous forward current IS ISM V SD trr Q rr - tbd - 52 208 tbd tbd A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C V GS = 0 V, I F = 104 A Reverse recovery time V R = 80 V, I F=I S , diF/dt = 100 A/s Reverse recovery charge V R = 80 V, I F=lS , diF/dt = 100 A/s Semiconductor Group 4 06 / 1998 Target data sheet SPPXXN10 - Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or ii d i d/ fh lif f h f il i i bl h h h lh f h Semiconductor Group 5 06 / 1998 |
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