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 TLVD420.
Vishay Telefunken
DH Backlighting LED in o 3 mm Tinted Non-Diffused Package
Color Double hetero red Type TLVD4200 Technology GaAlAs on GaAs Angle of Half Intensity o 85
Description
The TLVD4200 serie was developed for backlighting in the extrem bright double heterojunction (DH) red GaAlAs on GaAs technology. Due to its special shape the spatial distribution of the radiation is qualified for backlighting. To optimize the brightness of backlighting a custom- built reflector (with scattering) is required. Uniform illumination can be enhanced by covering the front of the reflector with diffusor material. This is a bright and flexible solution for backlighting different areas.
96 11665
Features
D D D D D D D D D
High brightness Wide viewing angle Categorized for luminous flux Available in DH red Tinted clear package Low power dissipation Low self heating Rugged design High reliability
Applications
Backlighting of display panels, LCD displays, symbols on switches, keyboards, graphic boards and measuring scales Illumination of large areas e.g. dot matrix displays
Document Number 83058 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 1 (6)
TLVD420.
Vishay Telefunken Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified TLVD4200 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 50 1 100 100 -20 to +100 -55 to +100 260 400 Unit V mA A mW C C C C K/W
tp 10 ms Tamb 60C
x
t
x 5 s, 2 mm from body
Optical and Electrical Characteristics
Tamb = 25_C, unless otherwise specified Double hetero red (TLVD4200 ) Parameter Luminous flux Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test Conditions IF = 15 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol Min 40 Typ 80 640 650 85 1.8 15 50 Max Unit mlm nm nm deg V V pF
VF VR Cj
fV ld lp
2.2
6
www.vishay.de * FaxBack +1-408-970-5600 2 (6)
Document Number 83058 Rev. A1, 04-Feb-99
TLVD420.
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
125 PV - Power Dissipation ( mW ) 10000 Tamb 100 IF - Forward Current ( mA ) 1000 tp/T=0.01 0.02 0.05 100 1 10 0.5 0.2 0.1
v65C
75
50 25 0 0 20 40 60 80 100
1 0.01
95 10047
0.1
1
10
100
95 10904
Tamb - Ambient Temperature ( C )
tp - Pulse Length ( ms )
Figure 1 Power Dissipation vs. Ambient Temperature
60 IF - Forward Current ( mA ) 50 40 30 20 10 0 0
95 10095
Figure 3 Forward Current vs. Pulse Length
20
40
60
80
100
Tamb - Ambient Temperature ( C ) 0 I v rel - Relative Luminous Intensity 10 20 30 40
Figure 2 Forward Current vs. Ambient Temperature
50
60
70 80 0.6 1.0
1.0
96 11608
0.8
0.6
0.4
0.2
0
0.2
0.4
0.8
Figure 4 Rel. Luminous Intensity vs. Angular Displacement
Document Number 83058 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 3 (6)
TLVD420.
Vishay Telefunken
100 DH Red IF - Forward Current ( mA ) - Relative Luminous Flux DH Red 10
1
10
0.1
Fv rel
1 1 1.5 2 2.5 3
96 11607
0.01 0.1 1 10 100 VF - Forward Voltage ( V ) IF - Forward Current ( mA )
95 10014
Figure 5 Forward Current vs. Forward Voltage
2.0
Figure 8 Relative Luminous Flux vs. Forward Current
1.2 Iv rel - Relative Luminous Intensity
DH Red - Relative Luminous Flux 1.6
DH Red 1.0 0.8 0.6 0.4 0.2 0 600
1.2
0.8 0.4 0 0 20 40 60 80 100
Fv rel
96 11605
Tamb - Ambient Temperature ( C )
620
95 10018
l - Wavelength ( nm )
640
660
680
700
Figure 6 Rel. Luminous Flux vs. Ambient Temperature
2.4 DH Red - Relative Luminous Flux 2.0 1.6 1.2 0.8 0.4 IFAV=10mA, const. 0 10
96 11606
Figure 9 Relative Luminous Intensity vs. Wavelength
Fv rel
20 0.5
50 0.2
100 0.1
200 0.05
500 0.02
IF(mA) tp/T
1
Figure 7 Rel. Luminous Flux vs. Forw. Current/Duty Cycle
www.vishay.de * FaxBack +1-408-970-5600 4 (6)
Document Number 83058 Rev. A1, 04-Feb-99
TLVD420.
Vishay Telefunken Dimensions in mm
9510953
Document Number 83058 Rev. A1, 04-Feb-99
www.vishay.de * FaxBack +1-408-970-5600 5 (6)
TLVD420.
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 6 (6)
Document Number 83058 Rev. A1, 04-Feb-99


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