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| x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.075 MAX x Ultra High-Speed Switching x SOP-8 Package x Two FET Devices built-in s General Description The XP133A0175SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.048(Vgs=10V) Rds(on)=0.075(Vgs=4.5V) Ultra high-speed switching Operational Voltage: 4.5V High density mounting: SOP-8 u s Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 s Pin Assignment PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain SOP-8 (TOP VIEW) s Equivalent Circuit 1 2 3 4 N-Channel MOS FET (2 devices built-in) s Absolute Maximum Ratings PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 30 20 5 15 5 2 150 -55~150 Ta=25: UNITS V V A A A W : : 8 7 6 5 Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=20V, Vds=0V Id=1mA, Vds=10V Id=3A, Vgs=10V Id=3A, Vgs=4.5V Id=3A, Vds=10V If=5A, Vgs=0V MIN TYP MAX 10 1 1.0 0.04 0.06 7 0.85 1.1 2.5 0.048 0.075 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 520 340 130 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=3A Vdd=10V CONDITIONS MIN TYP 15 20 25 15 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS :/W Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current vs. Gate/Source Voltage Pulse Test, Vds=10V Drain Current:Id (A) Drain/Source Voltage:Vds (V) Drain Current:Id (A) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: Drain /Source On-State Resistance :Rds (on) () Drain/Source On-State Resistance :Rds (on) () u Gate/Source Voltage:Vgs (V) Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=10V, Id=1mA Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Drain/Source On-State Resistance :Rds (on) () Ambient Temperature:Topr (:) Ambient Temperature:Topr (:) Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Switching Time vs. Drain Current Vgs=5V, Vdd 10V, PW=10sec. duty 1% Capacitance:Ciss, Coss, Crss (pF) Switching Time:t (ns) Drain/Source Voltage:Vds (V) Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge Vds=10V, Id=5A Reverse Drain Current vs. Source/Drain Voltage Pulse Test u Gate/Source Voltage:Vgs (V) Gate Charge:Qg (nc) Reverse Drain Current:Id (A) Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB) Single Pulse Pulse Width:PW (sec) |
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