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| TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in GSM 900-MHz mobile phones. With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0912 needs few external components and reduces system costs. Features D 35 dBm output power D Power-added efficiency (PAE) 50% D Single supply operation at 3 V no negative voltage necessary D Power-ramp control D Simple input and output matching D Simple output matching for maximum flexibility D SMD package (PSSOP16 with heat slug) D Current consumption in power-down mode 10 A, no external power-supply switch required Block Diagram VCC1 5 1 VCC2 2 3 GND 4 10 16 11 RFin (900 MHz) 12 6 Match Match Match RFout/VCC3 13 14 VCTL VCC,CTL GND 8 9 7 15 Harmonic tuning Control (900 MHz) 14744 Figure 1. Block diagram Ordering Information Extended Type Number TST0912-M TST0912-M Package PSSOP16 PSSOP16 Remarks Tube Taped and reeled Rev. A1, 20-May-99 1 (6) Preliminary Information TST0912 Pin Description VCC2 VCC2 VCC3 GND VCC1 RFin GND VCTL 1 2 3 4 5 6 7 8 14963 16 GND 15 RFout/VCC3 14 RFout/VCC3 13 RFout/VCC3 12 RFout/VCC3 11 RFout/VCC3 10 GND 9 VCC,CTL Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VCC2 VCC2 VCC2 GND VCC1 RFin GND VCTL VCC,CTL GND RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/ VCC3 GND Function Supply voltage 2 Supply voltage 2 Supply voltage 2 Ground Supply voltage 1 RF input Ground (control) Control input Supply voltage for control Ground (optional) RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / harmonic tuning Ground Figure 2. Pinning Absolute Maximum Ratings All voltages are referred to GND Supply voltage VCC Parameter Pin 5 Pins 1, 2 and 3 Pins 11, 12, 13 and 14 Pin 9 Pin 6 Pin 8 Symbol VCC1 VCC2 VCC3 VCC, CTL Pin VCTL tburst Tj Tstg Min. Typ. Max. 5.0 Unit V Input power Gain control voltage Duty cycle for operation Burst duration Junction temperature Storage temperature 0 - 40 12 2.2 25 1.2 +150 +150 dBm V % ms C C Thermal Resistance Parameters Junction ambient Symbol RthJA Value t.b.d. Unit K/W Operating Range All voltages are referred to GND Parameter Supply voltage VCC Ambient temperature Input frequency Symbol VCC1, VCC2, VCC3, VCC, CTL Tamb fin Min. 2.4 - 25 900 Typ. 3.5 Max. 4.5 + 85 Unit V C MHz 2 (6) Rev. A1, 20-May-99 Preliminary Information TST0912 Electrical Characteristics Test conditions: VCC = VCC1 to VCC3, VCC, CTL = 3.5 V, VCTL = 1.5 V, Tamb = + 25C, tburst = 0.577 ms, tperiod = 4.615 ms (see application circuit) Parameters Power supply Supply voltage Current consumption Current consumption (leakage current) RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power Test Conditions / Pins Symbol VCC I I Min. 2.4 Typ. 3.5 1.7 Max. 4.5 Unit V A A Active mode Pout = 34.5 dBm, PAE = 50% Power-down mode VCTL 0.2 V 10 Pin = 0 to 12 dBm, Pout = 34.5 dBm fin Zi Pin VSWR 880 900 50 3 915 12 2:1 MHz W dBm Minimum output power Power-added efficiency Stability Load mismatch (stable, no demage) Second harmonic distortion Third harmonic distortion Noise power Pin = 3 dBm, RL = RG = 50 VCC = 3.5 V, Tamb = +25C VCC = 2.7 V, Tamb = +85C VCTL = 0.3 V VCC = 3 V, Pout = 28 dBm VCC = 3 V, Pout = 30 dBm VCC = 3 V, Pout = 33.5 dBm Tamb = -25 to + 85 C no spurious -60 dBc Pout = 34.5 dBm, all phases Zo Pout 34.3 32.0 25 35 50 50 34.8 33.0 - 20 W dBm dBm dBm % 10 : 1 10 : 1 -35 -35 dBc dBc dBm dBm s dB PAE VSWR VSWR 2fo 3fo Pout = 34 dBm, RBW = 100 kHz f = 925 to 935 MHz f 935 MHz tr, tf Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTRL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 50 - 73 - 85 Rise and fall time Isolation between input and output Power control Control curve slope Power-control range Control-voltage range Control current *) - 70 - 82 0.5 150 50 0.3 2.0 200 dB/ V dB V A with external matching (see application circuit) Rev. A1, 20-May-99 3 (6) Preliminary Information TST0912 50 Pout ( dBm ), Gain ( dB ), PAE ( % ) 50 PAE Pout Gain 20 10 0 -40 Pout ( dBm ), PAE ( % ) 40 30 45 40 35 30 25 20 2.5 PAE Pout -30 -20 -10 Pin (dBm) 0 10 20 3.0 3.5 4.0 VCC (V) 4.5 5.0 Figure 3. Gain, Pout and PAE versus Pin 60 50 P ( dBm ), PAE ( % ) out 40 30 20 10 0 -10 0.5 Figure 5. Pout, PAE versus VCC PAE Remarks for the Application Circuit All components Tx are microstrip lines: FR4, epsilon(r) = 4.3, metal: Cu 3.5 mm; distance: 1. layer to RF ground = 0.5 mm Name T1 T2 T3 T4 l mm 20.5 1.3 14.8 14.2 w mm 1.0 1.0 0.5 0.5 Name T5 T6 T7 T8 l mm 2.5 43.1 6.0 10.0 w mm 1.0 0.5 1.25 0.5 Pout 0.75 1.00 1.25 1.50 1.75 2.00 Vramp (V) Figure 4. Pout, PAE versus Vramp Application Circuit VCC C1 220nF C2 220nF C3 39pF AVX T3 15pF AVX C4 C5 RFIN 900 MHz 12pF L1 3.3nH VCTL T5 7 Control C6 22pF 8 9 10 VCC,CTL C7 22pF C8 1nF 4 T4 5 6 13 12 11 T7 C9 10 pF AVX C10 56pF RFOUT T1 T2 2 3 15 14 C12 220nF 1 16 Harmonic tuning T8 C11 100pF T6 1/4 Wavelength line 14250 Figure 6. 4 (6) Rev. A1, 20-May-99 Preliminary Information TST0912 Package Information Package PSSOP16 Dimensions in mm 4.98 4.80 1.60 1.45 0.25 0.64 4.48 16 9 0.10 0.00 3.91 6.02 0.2 2.21 1.80 technical drawings according to DIN specifications 1 3.12 2.72 8 13048 Rev. A1, 20-May-99 5 (6) Preliminary Information TST0912 Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Rev. A1, 20-May-99 Preliminary Information |
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