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EMF32 / UMF32N
Transistors
Power management (dual transistors)
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
Application Power management circuit
External dimensions (Unit : mm)
Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
0.22
(4) (5) (6)
(3) (2) (1)
1.2 1.6
0.5
Structure Silicon epitaxial planar transistor
ROHM : EMT6
0.13
Each lead has same dimensions
Abbreviated symbol : F32
Equivalent circuits
(4)
(3)
0.65
(3)
(2)
(1)
0.5 0.5 1.0 1.6
0.65 0.7 0.9
1.25 2.1
0.15
(4) (5) (6)
(1)
Tr2
(6)
Tr1
1pin mark
0.1Min.
Packaging specifications
Type Package Marking Code Basic ordering unit (pieces)
ROHM : UMT6
UMF32 UMT6 F32 TR 3000
EMF32 EMT6 F32 T2R 8000
Each lead has same dimensions
Abbreviated symbol : F32
2.0
0.2
(5)
1.3
(2)
1/4
EMF32 / UMF32N
Transistors
Absolute maximum ratings (Ta=25C) Tr1
Parameter Symbol Limits VCBO -50 Collector-base voltage VCEO -50 Collector-emitter voltage -5 VEBO Emitter-base voltage IC -100 Collector current PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55 to +150 Range of storage temperature Unit V V V mA mW C C
1
1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Symbol Limits Parameter VDSS 30 Drain-source voltage VGSS 20 Gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain current IDRP 200 Pulsed Total power dissipation 150(TOTAL) PD Tch 150 Channel temperature Tstg -55 to +150 Range of storage temperature Unit V V mA mA mA mA mW C C
1 1 2
1 PW10ms Duty cycle50% 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C) Tr1
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. -50 -50 -5 - - - 100 3.29 - Typ. - - - - - - 250 4.7 250 Max. - - - -0.5 -0.5 -0.3 600 6.11 - Unit V V V A A V - k MHz IC= -50A IC= -1mA IE= -50A VCB= -50V VEB= -4V IC/IB= -5mA/ -0.25mA IC= -1mA, VCE= -5V - VCE= -10V, IE=5mA, f=100MHz Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
Transition frequency of the device
Tr2
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverce transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) |Yfs| Ciss Coss Crss td(on)
tr td(off) tf
Min. - 30 - 0.8 - - 20 - - - - - - -
Typ. - - - - 5 7 - 13 9 4 15 35 80 80
Max. 1 - 1.0 1.5 8 13 - - - - - - - -
Unit A V A V ms pF pF pF ns ns ns ns
Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=100A ID=10mA, VGS=4V ID=1mA, VGS=2.5V VDS=3V, ID=10mA VDS=5V, VGS=0V, f=1MHz
ID=10mA, VDD 5V, VGS=5V, RL=500, RGS=10
2/4
EMF32 / UMF32N
Transistors
Electrical characteristic curves Tr1
1k 500
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
VCE=-5V
-1 -500m -200m -100m -50m -20m -10m -5m -2m
Ta=100C 25C -40C
lC/lB=20
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 -100 -200 -500 -1m -2m -5m -10m -20m -50m -100m
Ta=100C 25C -40C
-1m -100 -200 -500 -1m -2m -5m -10m -20m -50m-100m COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Tr2
GATE THRESHOLD VOLTAGE : VGS(th) (V)
0.15
4V 3V
200m
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
3.5V
Ta=25C Pulsed
100m
50m 20m
VDS=3V Pulsed
2
VDS=3V ID=0.1mA Pulsed
1.5
0.1
10m
5m 2m
Ta=125C 75C 25C -25C
2.5V
1
0.05
2V VGS=1.5V
1m
0.5m
0.5
0.2m
0 0
1
2
3
4
5
0.1m 0
1
2
3
4
0 -50 -25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : VDS (V)
GATE-SOURCE VOLTAGE : VGS (V)
CHANNEL TEMPERATURE : Tch (C)
Fig.3 Typical output characteristics
Fig.4 Typical transfer characteristics
Fig.5 Gate threshold voltage vs. channel temperature
50
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
Ta=125C 75C 25C -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
20 10 5
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
VGS=4V Pulsed
50
Ta=125C 75C 25C -25C
VGS=2.5V Pulsed
15
Ta=25C Pulsed
10
2 1
2 1
0.5 0.001 0.002
5
ID=0.1A
ID=0.05A
0.5 0.001 0.002
0.005 0.01 0.02
0.05 0.1
0.2
0.5
0.005 0.01 0.02
0.05
0.1
0.2
0.5
0 0
5
10
15
20
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6
Static drain-source on-state resistance vs. drain current ( )
Fig.7
Static drain-source on-state resistance vs. drain current ( )
Fig.8
Static drain-source on-state resistance vs. gate-source voltage
3/4
EMF32 / UMF32N
Transistors
9
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ()
REVERSE DRAIN CURRENT : IDR (A)
8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75
ID=100mA
VGS=4V Pulsed
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
0.5
VDS=3V Pulsed
200m
0.2 0.1 0.05
Ta=-25C 25C 75C 125C
100m 50m
VGS=0V Pulsed
20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
ID=50mA
0.02 0.01
0.005
0.002
Ta=125C 75C 25C -25C
100 125
150
0.001 0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (C)
DRAIN CURRENT : ID (A)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9
Static drain-source on-state resistance vs. channel temperature
Fig.10 Forward transfer admittance vs. drain current
Fig.11 Reverse drain current vs. source-drain voltage ( )
REVERSE DRAIN CURRENT : IDR (A)
200m
100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m
Ta=25C Pulsed
50
20
CAPACITANCE : C (pF)
Ta=25C f=1MHZ VGS=0V
SWITHING TIME : t (ns)
1000
tf
500
td(off)
200 100 50
tr td(on)
Ta=25C VDD=5V VGS=5V RG=10 Pulsed
10 5
Ciss
VGS=4V
0V
Coss Crss
20 10
5
2 1
0.5 0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
2 0.1 0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.12 Reverse drain current vs. source-drain voltage ( )
Fig.13 Typical capacitance vs. drain-source voltage
Fig.14 Switching characteristics
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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