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| DATA SHEET MOS INTEGRATED CIRCUIT PD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The PD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits using bipolar transistors. A low-voltage malfunction prevention function is provided to prevent the IC from malfunctioning when the supply voltage drops. By eliminating the charge pump circuit, the current during power-OFF is drastically decreased. As the package, a 30-pin plastic shrink SOP is employed to enable the creation of compact, slim application sets. This driver IC can drive two stepping motors at the same time, and is ideal for driving stepping motors in the lens of a video camera. FEATURES * Four H bridge circuits employing power MOS FETs * Low current consumption by eliminating charge pump VM pin current when power-OFF: 10 A MAX. VDD pin current: 10 A MAX. * Input logic frequency: 100 kHz * 3-V power supply Minimum operating supply voltage: 2.5 V * Low-voltage malfunctioning prevention circuit * 30-pin plastic shrink SOP (300 mil) (PD16833AG3) ORDERING INFORMATION Part Number Package 30-pin plastic shrink SOP (300 mil) PD16833AG3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Parameter Supply voltage Symbol VDD VM Input voltage H bridge drive currentNote 1 currentNote 1 VIN IDR (DC) IDR (pulse) PT TCH (MAX) Tstg DC PW 10 ms, Duty 5 % Conditions Rating -0.5 to +6.0 -0.5 to +6.0 -0.5 to VDD + 0.5 300 700 1.19 150 -55 to +150 Unit V V V mA mA W C C Instantaneous H bridge drive Power dissipationNote 2 Peak junction temperature Storage temperature range Notes 1. Permissible current per phase, when mounted on a printed circuit board 2. When mounted on a glass epoxy board (10 cm x 10 cm x 1 mm) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. S13147EJ2V0DS00 (2nd edition) Date Published March 2002 N CP(K) Printed in Japan (c) 1998 PD16833A Recommended Operating Conditions Parameter Supply voltage Symbol VDD VM H bridge drive current Logic input frequencyNote Operating temperature range Peak junction temperature IDR fIN TA TCH (MAX) -10 MIN. 2.5 2.7 -200 TYP. MAX. 5.5 5.5 200 100 85 125 Unit V V mA kHz C C Note Common to IN and EN pins DC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 C) Parameter OFF VM pin current VDD pin current High-level input current Low-level input current Input pull-down resistor High-level input voltage Low-level input voltage H bridge ON resistanceNote Symbol IM (OFF) IDD IIH IIL RIND VIH VIL RON VDDS1 VDD = 2.5 V to 5.5 V VDD = 2.5 V to 5.5 V VDD = VM = 2.7 V to 5.5 V VM = 5.0 V -10 C TA +85 C VM = 3.0 V -10 C TA +85 C 0.8 Conditions with all control pins at low level with all control pins at low level VIN =VDD VIN = 0 -1.0 50 VDD x 0.7 -0.3 200 VDD + 0.3 VDD x 0.3 3.0 2.5 MIN. TYP. MAX. 10 10 0.06 Unit A A mA A k V V V Low-voltage malfunction prevention circuit operating voltage VDDS2 0.65 2.5 V Note Sum of top and bottom ON resistances (@IDR = 100 mA) AC Characteristics (Unless otherwise specified, VDD = VM = 3.0 V, TA = 25 C) Parameter H bridge output circuit turn-ON time H bridge output circuit turn-OFF time Rise time Fall time tr tf 0.1 0.4 70 1.0 200 tOFFH 0.2 0.5 Symbol tONH Conditions RM = 20 , Figure 1 MIN. TYP. 0.7 MAX. 20 Unit s s s ns 2 Data Sheet S13147EJ2V0DS PD16833A FUNCTION TABLE Channel 1 EN1 H H L L L H L H IN1 H L Z Z OUT1A L H Z Z OUT1B H H L L Channel 2 EN2 L H L H IN2 H L Z Z OUT2A L H Z Z OUT2B Channel 3 EN3 H H L L L H L H IN3 H L Z Z OUT3A L H Z Z OUT3B Channel 4 EN4 H H L L L H L H IN4 H L Z Z OUT4A L H Z Z OUT4B H: High level, L: Low level, Z: High impedance IN PIN CONFIGURATION NC NC VDD VM1 1A PGND 2A 3A PGND 4A VM4 IN1 EN1 IN2 EN2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 NC NC DGND NC 1B PGND 2B VM2, 3 3B PGND 4B EN4 IN4 EN3 IN3 Data Sheet S13147EJ2V0DS 3 PD16833A Figure 1. Switching Characteristic Wave 100 % 50 % 0% tON tOFF 100 % 90 % IDR 0% tf tOFF 100 % 90 % 50 % 10 % -10 % -50 % -90 % tr -100 % -50 % tr -90 % tf The current flowing in the direction from OUT_A to OUT_B is assumed to be (+). 50 % 10 % -10 % tON 50 % VIN 4 Data Sheet S13147EJ2V0DS PD16833A BLOCK DIAGRAM NC 1 NC 2 NC 27 NC 29 NC 30 VDD 3 Low-voltage malfunction prevention circuit 4 VM1 IN1 12 Control circuit H bridge 1 5 1A EN1 13 26 1B DGND 6 PGND 23 VM2, 3 IN2 14 Control circuit H bridge 2 7 2A EN2 15 24 2B DGND 25 PGND IN3 16 Control circuit H bridge 3 8 3A EN3 17 22 3B DGND 9 PGND 11 VM4 IN4 18 Control circuit H bridge 4 10 4A EN4 19 20 4B DGND 28 21 PGND Data Sheet S13147EJ2V0DS 5 6 VDD = VM = 2.7 V to 5.5 V DC/DC Converter 1 to 10 F Battery 1 to 10 F VM4 VDD H bridge 1 Low-voltage malfunction prevention circuit PGND 2A H bridge 2 PGND Control circuit 3A Level shift circuit H bridge 3 PGND 4A H bridge 4 4B DGND PGND 3B Motor 2 2B Data Sheet S13147EJ2V0DS STANDARD CONNECTION EXAMPLE VM2, 3 VM1 1A 1B Motor 1 IN1 EN1 IN2 EN2 CPU IN3 EN3 IN4 EN4 GND PD16833A PD16833A TYPICAL CHARACTERISTICS (TA = 25 C) PT vs. TA characteristics 1.4 1.2 Total power dissipation PT (W) IM (OFF) vs. VM characteristics 20 1.19 W OFF VM pin current IM (OFF) ( A) All control pins at low level TA = 25 C 1.0 0.8 0.6 0.4 0.2 0 -10 10 0 0 40 60 80 100 120 1 2 3 4 5 6 7 Ambient temperature TA (C) Output block supply voltage VM (V) IIH/IIL vs. VIN characteristics 100 TA = 25 C 80 Input voltage VIH/VIL (V) Input current IIH/IIL ( A) VIH/VIL vs. VDD characteristics TA = 25 C 3 VIH VIL 2 60 IIH 40 20 IIL 1 0 1 2 3 4 5 6 7 1 2 3 4 5 6 7 Input voltage VIN (V) Control block supply voltage VDD (V) Data Sheet S13147EJ2V0DS 7 PD16833A RIND vs. VDD characteristics 200 TA = 25 C Low voltage detection voltage VDDS (V) Input pull-down resistor RIND (k) VDDS vs. VM characteristics 3 TA = 25 C 150 2 100 1 50 0 1 2 3 4 5 6 7 Control block supply voltage VDD (V) 0 1 2 3 4 5 6 7 Output block supply voltage VM (V) RON vs. VM characteristics 3 TA = 25 C IDR = 100 mA Output ON resistor RON () Output ON resistor RON () RON vs. TA characteristics 3 VM = 3.5 V IDR = 100 mA 2 2 1 1 0 1 2 3 4 5 6 7 Output block supply voltage VM (V) 0 -25 0 25 50 75 100 Ambient temperature TA (C) 8 Data Sheet S13147EJ2V0DS PD16833A Switching time vs. VDD/VM characteristics 1000 RM = 20 TA = 25 C Switching time tON/tOFF/tr/tf (ns) Switching time tON/tOFF/tr/tf (ns) Switching time vs. TA characteristics 1000 VDD = VM = 3 V RM = 20 800 tON 600 tr 400 tOFF 200 tf 0 -25 800 600 tON 400 200 tOFF tr tf 0 1 2 3 4 5 6 7 Supply voltage VDD/VM (V) 0 25 50 75 100 Ambient temperature TA (C) Data Sheet S13147EJ2V0DS 9 PD16833A PACKAGE DIMENSION 30-PIN PLASTIC SSOP (7.62 mm (300)) 30 16 detail of lead end P 1 A 15 F G H I J S C D E M M N S B K L NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition. ITEM A B C D E F G H I J K L M N P MILLIMETERS 9.850.26 0.51 MAX. 0.65 (T.P.) 0.32 +0.08 -0.07 0.1250.075 2.0 MAX. 1.70.1 8.10.2 6.10.2 1.00.2 0.17 +0.08 -0.07 0.50.2 0.10 0.10 3 +7 -3 P30GS-65-300B-3 10 Data Sheet S13147EJ2V0DS PD16833A RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. For the details of the recommended soldering conditions of this type, refer to the Semiconductor Device Mounting Technology Manual (C10535E). Symbol of Recommended Soldering IR35-00-3 Soldering Method Infrared reflow Soldering Conditions Peak package temperature: 235 C, Time: 30 seconds MAX. (210 C MIN.), Number of times: 3 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. Peak package temperature: 215 C, Time: 40 seconds MAX. (200 C MIN.), (200 C MIN.), Number of times: 2 MAX., Number of days: NoneNote, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. Soldering bath temperature: 260 C MAX., Time: 10 seconds MAX., Preheating temperature: 120 C MAX., Number of times: 1, Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% MAX.) is recommended. VPS VP15-00-2 Wave soldering WS60-00-1 Note The number of storage days at 25 C, 65% RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination. Data Sheet S13147EJ2V0DS 11 PD16833A * The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 |
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