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| AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD protected. Standard Product AOD421 is Pb-free (meets ROHS & Sony 259 specifications). AOD421L is a Green Product ordering option. AOD421 and AOD421L are electrically identical. TO-252 D-PAK Features VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75m (VGS = -10V) RDS(ON) < 95m (VGS = -4.5V) RDS(ON) < 145m (VGS = -2.5V) ESD Rating: 2000V HBM D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation B Power Dissipation A C Maximum -20 12 -12.5 -8.9 -30 18.8 9.4 2 1.33 -55 to 175 Units V V A TA=25C TA=70C TC=25C TC=100C TA=25C TA=70C ID IDM PD PDSM TJ, TSTG W W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 23 50 6 Max 28 60 8 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD421 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-12.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-3A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-12.5A -1 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current -0.7 -15 61 83 75 110 8.8 -0.81 -8.5 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 77 62 9.2 4.6 0.9 2.1 5.2 VGS=-10V, VDS=-10V, RL=0.75, RGEN=3 IF=-12.5A, dI/dt=100A/s 38 17 31 19 6.3 13 620 75 105 95 145 -0.9 Min -20 -0.5 -2.5 1 10 -1.4 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-4.5V, VDS=-10V, ID=-12.5A Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. I. Revision 0: July 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 35 30 25 -ID (A) 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 160 Normalized On-Resistance 140 120 RDS(ON) (m) 100 80 60 40 20 0 2 4 6 8 10 12 14 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 RDS(ON) (m) -IS (A) 140 120 100 80 60 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C ID=-12.5A VGS=-10V VGS=-4.5V VGS=-2.5V 1.6 ID=-3A, VGS=-4.5V 1.4 ID=-12.5A, VGS=-10V -5.0V -4.0V -3.0V -2.5V -2.0V VGS=-1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics -ID(A) 8 10 -10.0V VDS=-5V 6 4 125C 2 25C 1.2 ID=-1A, VGS=-2.5V 1.0 1E+01 1E+00 125C 1E-01 1E-02 1E-03 1E-04 1E-05 25C Alpha & Omega Semiconductor, Ltd. AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 ID=-12.5A 4 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) -VGS (Volts) 600 Ciss 800 400 200 Crss 0 0 Coss 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100 TJ(Max)=175C, TA=25C 10s Power (W) 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 TJ(Max)=175C TA=25C 10 ID (Amps) 100s DC 1 RDS(ON) limited 0.1 0.1 1ms 1 10 100 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-tocase (Note F) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=8C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD421 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 12: Current De-rating (Note B) Power Dissipation (W) Current rating ID(A) 20 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 100 TJ(Max)=150C, TA=25C 10s 50 40 Power (W) 30 20 10 0 0.001 TA=25C 10 ID (Amps) 100s 1ms 1 RDS(ON) limited 0.1 0.1 1 10 DC 100m 1s 10s 100 0.01 0.1 1 10 100 1000 VDS (Volts) Figure 14: Maximum Forward Biased Safe Operating Area (Note H) 10 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 0.01 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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