View AP09N70P-A_1058286.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AP09N70P-A
Pb Free Plating Product
Advanced Power Electronics Corp.
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement RoHS Compliant GG S
S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
D
BVDSS RDS(ON) ID
650V 0.75 9A
Description
The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for DC-DC ,AC-DC converters for power applications. G D S
TO-220
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 650 30 9 5 40 156 1.25
2
Units V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
305 9 9 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 0.8 62 Unit /W /W
200705053-1/4
Data & specifications subject to change without notice
AP09N70P-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 650 2 -
Typ. 0.6 4.5 44 11 12 19 21 56 24 2660 170 10
Max. Units 0.75 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=4.5A VDS=VGS, ID=250uA VDS=10V, ID=4.5A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=9A VDS=480V VGS=10V VDD=300V ID=9A RG=10,VGS=10V RD=34 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area.
o 2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25 , IAS=9A.
Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.5V
1
Min. -
Typ. -
Max. Units 9 40 1.5 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25, IS=9A, VGS=0V
3.Pulse width <300us , duty cycle <2%.
2/4
AP09N70P-A
10
10
T C =25 C
8
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 6.0V 5.0V
T C =150 C
8
o
10V 6.0V 5.0V 4.5V
6
6
4
4
4.5V
2
4.0V
2
4.0V V G = 3 .5 V
0 0 3 6 9 12
0
V G = 3 .5 V
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
Normalized BVDSS (V)
1.1
I D =4.5A V G =10V Normalized RDS(ON)
2
1
1
0.9
0.8 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
4 10
IS (A)
T j = 150 o C
o T j = 25 C
VGS(th) (V)
3
1 2
0.1 0 0.2 0.4 0.6 0.8 1 1.2
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
AP09N70P-A
f=1.0MHz
16 10000
VGS , Gate to Source Voltage (V)
I D =9A
12
C iss V DS =320V V DS =400V V DS =480V
8
C (pF)
C oss
100
4
C rss
0
1
0
20
40
60
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
10us 100us 1ms
0.2
0.1
ID (A)
0.1
0.05
1
0.02
PDM
T c =25 o C Single Pulse
10ms 100ms
t
0.01
T
Single Pulse
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.1 1 10 100 1000 10000
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4

▲Up To Search▲

Price & Availability of AP09N70P-A

	To Download AP09N70P-A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .